Sub-critical regime of femtosecond inscription

We apply well known nonlinear diffraction theory governing focusing of a powerful light beam of arbitrary shape in medium with Kerr nonlinearity to the analysis of femtosecond (fs) laser processing of dielectric in sub-critical (input power less than the critical power of selffocusing) regime. Simple analytical expressions are derived for the input beam power and spatial focusing parameter (numerical aperture) that are required for achieving an inscription threshold. Application of non-Gaussian laser beams for better controlled fs inscription at higher powers is also discussed. © 2007 Optical Society of America.

Sub-critical regime of femtosecond inscription

We apply well known nonlinear diffraction theory governing focusing of a powerful light beam of arbitrary shape in medium with Kerr nonlinearity to the analysis of femtosecond (fs) laser processing of dielectric in sub-critical (input power less than the critical power of selffocusing) regime. Simple analytical expressions are derived for the input beam power and spatial focusing parameter (numerical aperture) that are required for achieving an inscription threshold. Application of non-Gaussian laser beams for better controlled fs inscription at higher powers is also discussed. © 2007 Optical Society of America.