Multiple conduction paths in boron δ-doped diamond structures

Impedance spectroscopy has been used to investigate conductivity within boron-doped diamond in an intrinsic/delta-doped/intrinsic (i-d-i) multilayer structure. For a 5 nm thick delta layer, three conduction pathways are observed, which can be assigned to transport within the delta layer and to two differing conduction paths in the i-layers adjoining the delta layer. For transport in the i-layers, thermal trapping/detrapping processes can be observed, and only at the highest temperature investigated (673 K) can transport due to a single conduction process be seen. Impedance spectroscopy is an ideal nondestructive tool for investigating the electrical characteristics of complex diamond structures.

Electronic properties of homoepitaxial (111) highly boron-doped diamond films

The use of diamond as a semiconductor for the realization of transistor structures, which can operate at high temperatures (>700 K), is of increasing interest. In terms of bipolar devices, the growth of n-type phosphorus doped diamond is more efficient on the (111) growth plane; p-type boron-doped diamond growth has been most usually grown in the (100) direction and, hence, this study into the electronic properties, at high temperatures, of boron-doped diamond (111) homoepitaxial layers. It is shown that highly doped layers (hole carrier concentrations as high as 2×1020 cm-3) can be produced without promoting the onset of (unwanted) hopping conduction. The persistence of valance-band conduction in these films enables relatively high mobility values to be measured ( ~ 20 cm2/V?s) and, intriguingly, these values are not significantly reduced at high temperatures. The layers also display very low compensation levels, a fact that may explain the high mobility values since compensation is required for hopping conduction. The results are discussed in terms of the potential of these types of layers for use with high temperature compatible diamond transistors.

Aluminium hydroxide stabilised MnFe2O4 and Fe3O4 nanoparticles as dual-modality contrasts agent for MRI and PET imaging

Magnetic nanoparticles (NPs) MnFe2O4 and Fe3O4 were stabilised by depositing an Al(OH)3 layer via a hydrolysis process. The particles displayed excellent colloidal stability in water and a high affinity to [18F]-fluoride and bisphosphonate groups. A high radiolabeling efficiency, 97% for 18F-fluoride and 100% for 64Cu-bisphosphonate conjugate, was achieved by simply incubating NPs with radioactivity solution at room temperature for 5min. The properties of particles were strongly dependant on the thickness and hardness of the Al(OH)3 layer which could in turn be controlled by the hydrolysis method. The application of these Al(OH)3 coated magnetic NPs in molecular imaging has been further explored. The results demonstrated that these NPs are potential candidates as dual modal probes for MR and PET. In vivo PET imaging showed a slow release of 18F from NPs, but no sign of efflux of 64Cu. © 2014 The Authors.