Finite element analysis of the statics of and vibrations in axisymmetric shells

The finite element process is now used almost routinely as a tool of engineering analysis. From early days, a significant effort has been devoted to developing simple, cost effective elements which adequately fulfill accuracy requirements. In this thesis we describe the development and application of one of the simplest elements available for the statics and dynamics of axisymmetric shells . A semi analytic truncated cone stiffness element has been formulated and implemented in a computer code: it has two nodes with five degrees of freedom at each node, circumferential variations in displacement field are described in terms of trigonometric series, transverse shear is accommodated by means of a penalty function and rotary inertia is allowed for. The element has been tested in a variety of applications in the statics and dynamics of axisymmetric shells subjected to a variety of boundary conditions. Good results have been obtained for thin and thick shell cases .

Faster radial strain relaxation in InAs-GaAs core-shell heterowires

The structure of wurtzite and zinc blende InAs-GaAs (001) core-shell nanowires grown by molecular beam epitaxy on GaAs (001) substrates has been investigated by transmission electron microscopy. Heterowires with InAs core radii exceeding 11 nm, strain relax through the generation of misfit dislocations, given a GaAs shell thickness greater than 2.5 nm. Strain relaxation is larger in radial directions than axial, particularly for shell thicknesses greater than 5.0 nm, consistent with molecular statics calculations that predict a large shear stress concentration at each interface corner. © 2012 American Institute of Physics.

High-frequency conductivity of optically excited charge carriers in hydrogenated nanocrystalline silicon investigated by spectroscopic femtosecond pump-probe reflectivity measurements

We report an investigation into the high-frequency conductivity of optically excited charge carriers far from equilibrium with the lattice. The investigated samples consist of hydrogenated nanocrystalline silicon films grown on a thin film of silicon oxide on top of a silicon substrate. For the investigation, we used an optical femtosecond pump-probe setup to measure the reflectance change of a probe beam. The pump beam ranged between 580 and 820nm, whereas the probe wavelength spanned 770 to 810nm. The pump fluence was fixed at 0.6mJ/cm2. We show that at a fixed delay time of 300fs, the conductivity of the excited electron-hole plasma is described well by a classical conductivity model of a hot charge carrier gas found at Maxwell-Boltzmann distribution, while Fermi-Dirac statics is not suitable. This is corroborated by values retrieved from pump-probe reflectance measurements of the conductivity and its dependence on the excitation wavelength and carrier temperature. The conductivity decreases monotonically as a function of the excitation wavelength, as expected for a nondegenerate charge carrier gas.