Study of epitaxial silicon layers with reference to the technology of semi-conductor devices

DUE TO COPYRIGHT RESTRICTIONS ONLY AVAILABLE FOR CONSULTATION AT ASTON UNIVERSITY LIBRARY AND INFORMATION SERVICES WITH PRIOR ARRANGEMENT

A study of field emission from semiconductors

In an attempt to clarify the behaviour of semi-conductor field emitters the properties of a narrow band gap material were investigated. A retarding potential analyser was built and tested using a tungsten emitter. The energy distribution of electrons emitted from single crystals of lead telluride (band gap 0.3 eV) and gallium phosphide (band gap 2.26 eV) were measured. The halfwidths of the distributions are discussed with respect to the relevant parameters for the materials. Methods of tip preparation had to be developed. The halfwidth of the energy distribution of electrons field emitted from carbon fibres was measured to be 0.21 ± 0.01 eV. A mechanism explaining the long lifetime of the emitters in poor vacuua is proposed.

Multilayered coated infra-red surface plasmon resonance fibre sensors for aqueous chemical sensing

A series of surface plasmonic fibre devices were fabricated by depositing multiple thin coatings on a lapped section of a standard single mode telecoms fibre forming a D-shaped section and then inscribing a grating-type structure using UV light. The coatings consisted of base coatings of semi-conductor (germanium) and dielectric (silicon dioxide) materials, followed by different metals. These fibre devices showed high spectral refractive index sensitivity with high coupling efficiency in excess of 40 dB for indices in the aqueous regime and below, with estimated index sensitivities of Lambda lambda/Lambda n = 90-800 nm from 1 to 1.15 index range and Lambda lambda/Lambda n = 1200-4000 nm for refractive indices from 1.33 to 1.39. (C) 2009 Elsevier Inc. All rights reserved.