Thiol-containing microspheres as polymeric ligands for the immobilisation of quantum dots

The first demonstration "polymeric ligands" for the immobilisation of quantum dots (QDs) is presented. Specifically, thiol-containing polystyrene microspheres were synthesised and used to incorporate QDs via a swelling/doping strategy. The resultant composite materials were shown to be highly stable against QD leaching in both apolar and polar solvents and retained an identical QD emission profile to non-immobilised QDs. This straightforward approach also allows easy access to controllable and reproducible multiple-QDcontaining microspheres.

THz emission from quantum dot-based THz antennas pumped by a tunable quantum-dot laser diode

The THz optoelectronics field is now maturing and semiconductor-based THz antenna devices are becoming more widely implemented as analytical tools in spectroscopy and imaging. Photoconductive (PC) THz switches/antennas are driven optically typically using either an ultrashort-pulse laser or an optical signal composed of two simultaneous longitudinal wavelengths which are beat together in the PC material at a THz difference frequency. This allows the generation of (photo)carrier pairs which are then captured over ultrashort timescales usually by defects and trapping sites throughout the active material lattice. Defect-implanted PC materials with relatively high bandgap energy are typically used and many parameters such as carrier mobility and PC gain are greatly compromised. This paper demonstrates the implementation of low bandgap energy InAs quantum dots (QDs) embedded in standard crystalline GaAs as both the PC medium and the ultrafast capture mechanism in a PC THz antenna. This semiconductor structure is grown using standard MBE methods and allows the device to be optically driven efficiently at wavelengths up to ~1.3 µm, in this case by a single tunable dual-mode QD diode laser.

Dynamical interplay between ground and excited states in quantum dot laser

Full text: Semiconductor quantum dot lasers are attractive for multipletechnological applications in biophotonics. Simultaneous two-state lasing ofground state (GS) and excited state (ES) electrons and holes in QD lasers ispossible under a certain parameter range. It has already been investigated in steady-stateoperations and in dynamical regimes and is currently a subject of the intesiveresearch. It has been shown that the relaxation frequency in the two-state lasingregime is not a function of the total intensity [1], as could be traditionallyexpected.In this work we study damping relaxation oscillations in QD lasersimultaneously operating at two transitions, and find that under variouspumping conditions, the frequency of oscillations may decrease, increase orstay without change in time as shown in Fig1.The studied QD laser structure wasgrown on a GaAs substrate by molecular-beam epitaxy. The active region includedfive layers of self-assembled InAs QDs separated with a GaAs spacer from a5.3nm thick covering layer of InGaAs and processed into 4mm-wide mesa stripe devices. The 2.5mm long lasers withhigh-and antireflection coatings on the rear and front facets lasesimultaneously at the GS (around 1265nm) and ES (around 1190nm) in the wholerange of pumping. Pulsed electrical pumping obtained from a high power (up to2A current) pulse source was used to achieve high output power operation. We simultaneously detect the total output and merely ES output using aBragg filter transmitting the short-wavelength and reflecting the long-wavelengthradiation. Typical QD does not demonstrate relaxation oscillations frequencybecause of the strong damping [2]. It is confirmed for the low (I<0.68A) andhigh (I>1.2 A) range of the pump currents in our experiments. The situationis different for a short range of the medium currents (0.68A

Quantum dot-based terahertz photoconductive antennas

We present novel Terahertz (THz) emitting optically pumped Quantum Dot (QD) photoconductive (PC) materials and antenna structures on their basis both for pulsed and CW pumping regimes. Full text Quantum dot and microantenna design - Presented here are design considerations for the semiconductor materials in our novel QD-based photoconductive antenna (PCA) structures, metallic microantenna designs, and their implementation as part of a complete THz source or transceiver system. Layers of implanted QDs can be used for the photocarrier lifetime shortening mechanism[1,2]. In our research we use InAs:GaAs QD structures of varying dot layer number and distributed Bragg reflector(DBR)reflectivity range. According to the observed dependence of carrier lifetimes on QD layer periodicity [3], it is reasonable to assume that electron lifetimes can be potentially reduced down to 0.45ps in such structures. Both of these features; long excitation wavelength and short carriers lifetime predict possible feasibility of QD antennas for THz generation and detection. In general, relatively simple antenna configurations were used here, including: coplanar stripline (CPS); Hertzian-type dipoles; bow-ties for broadband and log-spiral(LS)or log-periodic(LP)‘toothed’ geometriesfor a CW operation regime. Experimental results - Several lasers are used for antenna pumping: Ti:Sapphire femtosecond laser, as well as single-[4], double-[5] wavelength, and pulsed [6] QD lasers. For detection of the THz signal different schemes and devices were used, e.g. helium-cooled bolometer, Golay cell and a second PCA for coherent THz detection in a traditional time-domain measurement scheme.Fig.1shows the typical THz output power trend from a 5 um-gap LPQD PCA pumped using a tunable QD LD with optical pump spectrum shown in (b). Summary - QD-based THz systems have been demonstrated as a feasible and highly versatile solution. The implementation of QD LDs as pump sources could be a major step towards ultra-compact, electrically controllable transceiver system that would increase the scope of data analysis due to the high pulse repetition rates of such LDs [3], allowing real-time THz TDS and data acquisition. Future steps in development of such systems now lie in the further investigation of QD-based THz PCA structures and devices, particularly with regards to their compatibilitywith QD LDs as pump sources. [1]E. U. Rafailov et al., “Fast quantum-dot saturable absorber for passive mode-locking of solid-State lasers,”Photon.Tech.Lett., IEEE, vol. 16 pp. 2439-2441(2004) [2]E. Estacio, “Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures. Appl.Phys.Lett., vol. 94 pp. 232104 (2009) [3]C. Kadow et al., “Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics,” Appl. Phys. Lett., vol. 75 pp. 3548-3550 (1999) [4]T. Kruczek, R. Leyman, D. Carnegie, N. Bazieva, G. Erbert, S. Schulz, C. Reardon, and E. U. Rafailov, “Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device,” Appl. Phys. Lett., vol. 101(2012) [5]R. Leyman, D. I. Nikitichev, N. Bazieva, and E. U. Rafailov, “Multimodal spectral control of a quantum-dot diode laser for THz difference frequency generation,” Appl. Phys. Lett., vol. 99 (2011) [6]K.G. Wilcox, M. Butkus, I. Farrer, D.A. Ritchie, A. Tropper, E.U. Rafailov, “Subpicosecond quantum dot saturable absorber mode-locked semiconductor disk laser, ” Appl. Phys. Lett. Vol 94, 2511 © 2014 IEEE.