Optimized design of high power mid-infrared Er3+, Pr3+ -codoped ZBLAN fiber laser

Based on the rate equations describing the operation of the Er3+, Pr3+ -codoped ZBLAN fiber lasers with different pump configurations, theoretical calculations that relate to the population characteristics and optimization of CW operation of high power Er3+, Pr3+ :ZBLAN double-clad fiber lasers are presented. Using the measured ET (energy-transfer), ETU (energy-transfer-upconversion) and CR (cross-relaxation) parameters relevant to Er3+, Pr3+ -codoped ZBLAN, a good agreement between the theoretical results from the model and recently reported experimental measurements is obtained. The effects on the slope efficiency of a number of laser parameters including fiber length, reflectance of the output mirror and pumping configuration are quantitatively analyzed and used for the design and optimization of high power Er3+, Pr3+ -codoped ZBLAN fiber lasers.

Optimized design of high power mid-infrared Er3+, Pr3+ -codoped ZBLAN fiber laser

Based on the rate equations describing the operation of the Er3+, Pr3+ -codoped ZBLAN fiber lasers with different pump configurations, theoretical calculations that relate to the population characteristics and optimization of CW operation of high power Er3+, Pr3+ :ZBLAN double-clad fiber lasers are presented. Using the measured ET (energy-transfer), ETU (energy-transfer-upconversion) and CR (cross-relaxation) parameters relevant to Er3+, Pr3+ -codoped ZBLAN, a good agreement between the theoretical results from the model and recently reported experimental measurements is obtained. The effects on the slope efficiency of a number of laser parameters including fiber length, reflectance of the output mirror and pumping configuration are quantitatively analyzed and used for the design and optimization of high power Er3+, Pr3+ -codoped ZBLAN fiber lasers.

Spectral modification of type IA fibre Bragg gratings by high-power near-infrared lasers

We report the first experimental measurements on the spectral modification of type IA fibre Bragg gratings, incorporated in an optical network, which result from the use of high-power, near-infrared lasers. The fibre grating properties are modified in a controlled manner by exploiting the characteristics of the inherent 1400 nm absorption band of the optical fibre, which grows in strength during the type IA grating inscription. If the fibre network is illuminated with a high-power laser, having an emission wavelength coincident with the absorption band, the type IA centre wavelength and chirp can be modified. Furthermore, partial grating erasure is demonstrated. This has serious implications when using type IA gratings in an optical network, as their spectrum can be modified using purely optical methods (no external heating source acts on the fibre), and to their long-term stability as the grating is shown to decay. Conversely, suitably stabilized gratings can be spectrally tailored, for tuning fibre lasers or edge filter modification in sensing applications, by purely optical means. © 2006 IOP Publishing Ltd.

Can surface energy measurements predict the impact of catalyst hydrophobicity upon fatty acid esterification over sulfonic acid functionalised periodic mesoporous organosilicas?

Sulfonic acid functionalised periodic mesoporous organosilicas (PrSO3 H-PMOs) with tunable hydrophobicity were synthesised via a surfactant-templating route, and characterised by porosimetry, TEM, XRD, XPS, inverse gas chromatography (IGC) and ammonia pulse chemisorption. IGC reveals that incorporation of ethyl or benzyl moieties into a mesoporous SBA-15 silica framework significantly increases the non-specific dispersive surface energy of adsorption for alkane adsorption, while decreasing the free energy of adsorption of methanol, reflecting increased surface hydrophobicity. The non-specific dispersive surface energy of adsorption of PMO-SO3H materials is strongly correlated with their activity towards palmitic acid esterification with methanol, demonstrating the power of IGC as an analytical tool for identifying promising solid acid catalysts for the esterification of free fatty acids. A new parameter [-ΔGCNP-P], defined as the per carbon difference in Gibbs free energy of adsorption between alkane and polar probe molecules, provides a simple predictor of surface hydrophobicity and corresponding catalyst activity in fatty acid esterification. © 2014 Elsevier B.V.

Pulse width modulation (PWM) method for power components estimation in power meters

The scope of this paper is to present the Pulse Width Modulation (PWM) based method for Active Power (AP) and Reactive Power (RP) measurements as can be applied in Power Meters. Necessarily, the main aim of the material presented is a twofold, first to present a realization methodology of the proposed algorithm, and second to verify the algorithm’s robustness and validity. The method takes advantage of the fact that frequencies present in a power line are of a specific fundamental frequency range (a range centred on the 50 Hz or 60 Hz) and that in case of the presence of harmonics the frequencies of those dominating in the power line spectrum can be specified on the basis of the fundamental. In contrast to a number of existing methods a time delay or shifting of the input signal is not required by the method presented and the time delay by n/2 of the Current signal with respect to the Voltage signal required by many of the existing measurement techniques, does not apply in the case of the PWM method as well.

Novel evaluation procedure for internal and extraction efficiency of high-power blue LEDs

Internal quantum efficiency (IQE) of a high-brightness blue LED has been evaluated from the external quantum efficiency measured as a function of current at room temperature. Processing the data with a novel evaluation procedure based on the ABC-model, we have determined separately IQE of the LED structure and light extraction efficiency (LEE) of UX:3 chip. Full text Nowadays, understanding of LED efficiency behavior at high currents is quite critical to find ways for further improve­ment of III-nitride LED performance [1]. External quantum ef­ficiency ηe (EQE) provides integral information on the recom­bination and photon emission processes in LEDs. Meanwhile EQE is the product of IQE ηi and LEE ηext at negligible car­rier leakage from the active region. Separate determination of IQE and LEE would be much more helpful, providing correla­tion between these parameters and specific epi-structure and chip design. In this paper, we extend the approach of [2,3] to the whole range of the current/optical power variation, provid­ing an express tool for separate evaluation of IQE and LEE. We studied an InGaN-based LED fabricated by Osram OS. LED structure grown by MOCVD on sapphire substrate was processed as UX:3 chip and mounted into the Golden Dragon package without molding. EQE was measured with Labsphere CDS-600 spectrometer. Plotting EQE versus output power P and finding the power Pm corresponding to EQE maximum ηm enables comparing the measurements with the analytical rela­tionships ηi = Q/(Q+p1/2+p-1/2) ,p = P/Pm , and Q = B/(AC) 1/2 where A, Band C are recombination constants [4]. As a result, maximum IQE value equal to QI(Q+2) can be found from the ratio ηm/ηe plotted as a function of p1/2 +p1-1/2 (see Fig.la) and then LEE calculated as ηext = ηm (Q+2)/Q . Experimental EQE as a function of normalized optical power p is shown in Fig. 1 b along with the analytical approximation based on the ABC­model. The approximation fits perfectly the measurements in the range of the optical power (or operating current) variation by eight orders of magnitude. In conclusion, new express method for separate evaluation of IQE and LEE of III-nitride LEDs is suggested and applied to characterization of a high-brightness blue LED. With this method, we obtained LEE from the free chip surface to the air as 69.8% and IQE as 85.7% at the maximum and 65.2% at the operation current 350 rnA. [I] G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, "Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies," 1. AppL Phys., vol. 114, no. 7, pp. 071101, Aug., 2013. [2] C. van Opdorp and G. W. 't Hooft, "Method for determining effective non radiative lifetime and leakage losses in double-heterostructure las­ers," 1. AppL Phys., vol. 52, no. 6, pp. 3827-3839, Feb., 1981. [3] M. Meneghini, N. Trivellin, G. Meneghesso, E. Zanoni, U. Zehnder, and B. Hahn, "A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes," 1. AppL Phys., vol. 106, no. II, pp. 114508, Dec., 2009. [4] Qi Dai, Qifeng Shan, ling Wang, S. Chhajed, laehee Cho, E. F. Schubert, M. H. Crawford, D. D. Koleske, Min-Ho Kim, and Yongjo Park, "Carrier recombination mechanisms and efficiency droop in GalnN/GaN light-emitting diodes," App/. Phys. Leu., vol. 97, no. 13, pp. 133507, Sept., 2010. © 2014 IEEE.

Real-time temperature estimation for power MOSFETs considering thermal ageing effects

This paper presents a novel real-time power-device temperature estimation method that monitors the power MOSFET's junction temperature shift arising from thermal aging effects and incorporates the updated electrothermal models of power modules into digital controllers. Currently, the real-time estimator is emerging as an important tool for active control of device junction temperature as well as online health monitoring for power electronic systems, but its thermal model fails to address the device's ongoing degradation. Because of a mismatch of coefficients of thermal expansion between layers of power devices, repetitive thermal cycling will cause cracks, voids, and even delamination within the device components, particularly in the solder and thermal grease layers. Consequently, the thermal resistance of power devices will increase, making it possible to use thermal resistance (and junction temperature) as key indicators for condition monitoring and control purposes. In this paper, the predicted device temperature via threshold voltage measurements is compared with the real-time estimated ones, and the difference is attributed to the aging of the device. The thermal models in digital controllers are frequently updated to correct the shift caused by thermal aging effects. Experimental results on three power MOSFETs confirm that the proposed methodologies are effective to incorporate the thermal aging effects in the power-device temperature estimator with good accuracy. The developed adaptive technologies can be applied to other power devices such as IGBTs and SiC MOSFETs, and have significant economic implications.