A study of field emission from semiconductors

In an attempt to clarify the behaviour of semi-conductor field emitters the properties of a narrow band gap material were investigated. A retarding potential analyser was built and tested using a tungsten emitter. The energy distribution of electrons emitted from single crystals of lead telluride (band gap 0.3 eV) and gallium phosphide (band gap 2.26 eV) were measured. The halfwidths of the distributions are discussed with respect to the relevant parameters for the materials. Methods of tip preparation had to be developed. The halfwidth of the energy distribution of electrons field emitted from carbon fibres was measured to be 0.21 ± 0.01 eV. A mechanism explaining the long lifetime of the emitters in poor vacuua is proposed.

Investigation of the effects of low energy high dose ion bombardment in metals and compound semiconductors

The effect of low energy nitrogen molecular ion beam bombardment on metals and compound semiconductors has been studied, with the aim to investigate at the effects of ion and target properties. For this purpose, nitrogen ion implantation in aluminium, iron, copper, gold, GaAs and AIGaAs is studied using XPS and Angle Resolve XPS. A series of experimental studies on N+2 bombardment induced compositional changes, especially the amount of nitrogen retained in the target, were accomplished. Both monoenergetic implantation and non-monoenergetic ion implantation were investigated, using the VG Scientific ESCALAB 200D system and a d. c. plasma cell, respectively. When the samples, with the exception of gold, are exposed to air, native oxide layers are formed on the surfaces. In the case of monoenergetic implantation, the surfaces were cleaned using Ar+ beam bombardment prior to implantation. The materials were then bombarded with N2+ beam and eight sets of successful experiments were performed on each sample, using a rastered N2+ ion beam of energy of 2, 3, 4 and 5 keV with current densities of 1 μA/cm2 and 5 μA/cm22 for each energy. The bombarded samples were examined by ARXPS. After each complete implantation, XPS depth profiles were created using Ar+ beam at energy 2 ke V and current density 2 μA/cm2 . As the current density was chosen as one of the parameters, accurate determination of current density was very important. In the case of glow discharge, two sets of successful experiments were performed in each case, by exposing the samples to nitrogen plasma for the two conditions: at low pressure and high voltage and high pressure and low voltage. These samples were then examined by ARXPS. On the theoretical side, the major problem was prediction of the number of ions of an element that can be implanted in a given matrix. Although the programme is essentially on experimental study, but an attempt is being made to understand the current theoretical models, such as SATVAL, SUSPRE and TRIM. The experimental results were compared with theoretical predictions, in order to gain a better understanding of the mechanisms responsible. From the experimental results, considering possible experimental uncertainties, there is no evidence of significant variation in nitrogen saturation concentration with ion energy or ion current density in the range of 2-5 ke V, however, the retention characteristics of implantant seem to strongly depend on the chemical reactivity between ion species and target material. The experimental data suggests the presence of at least one thermal process. The discrepancy between the theoretical and experimental results could be the inability of the codes to account for molecular ion impact and thermal processes.

An investigation into the depandance of electrical properties on microstructure in polycrystalline barium titanate

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Intrinsic thresholds in polycrystalline Udimet 720

The long crack threshold behaviour of polycrystalline Udimet 720 has been investigated. Faceted crack growth is seen near threshold when the monotonic crack tip plastic zone is contained within the coarsest grain size. At very high load ratios R (=P min/P max) it is possiblefor the monotonic crack tip plastic zone to exceed the coarsest grain size throughout the entire crack growth regime and non1aceted structure insensitive crack growth is then seen down to threshold. Intrinsic threshold values were obtained for non1aceted and faceted crack growth using a constant K max, increasing K min, computer controlled load shedding technique (K is stress intensity factor). Very high R values are obtained at threshold using this technique (0.75-0.95), eliminating closure effects, so the intrinsic resistance of the material to crack propagation is reflected in these values. The intrinsic non1aceted threshold value ΔK th is lower (2.3 MN m -3/2) than the intrinsicfaceted ΔK th value (4.8 MN m -3/2). This is thought to reflect not only the effect of crack branching and deflection (in the faceted case) on the crack driving force, but also the inherent difference in resistance of the material to the two different crack propagation micromechanisms. © 1993 The Institute of Materials.

Short fatigue crack path determinants in polycrystalline Ni-base superalloys

Fifty seven short fatigue cracks in the Ni-base superalloy AP1 have been examined, to ascertain how the paths taken by growing fatigue cracks are determined. The observations were made on the surface of a smooth specimen, and on the exposed fracture surfaces. Three dimensional reconstructions of the vulnerable microstructures in the vicinity of the cracks were produced. Initiation occurred in mode II, with the lines of intersection of the initiation sites with the specimen top surface orientated at approximately 45° to the tensile axis. These initiation sites developed in slip bands which crossed a large grain and at least one other grain via a grain boundary with a low angle of misorientation. 'River markings' on one of the initiation facets, indicated that the crack first opened from the top centre of the initiation grain. Subsequent to initiation, the growth paths of these cracks are related to the misorientations of the grains and the progress of the crack front.

Effects of hydrostatic tension on cleavage fracture of pure polycrystalline zinc

A study was made of notch effects on the cleavage fracture of polycrystalline zinc. It was seen that the nominal fracture stress of SENB specimens was independent of notch angle. The maximum tensile stress below the notch at fracture in SENB specimens was shown to be different from the tensile stress at fracture in tensile testpieces over a temperature range from −196 to −17°C. The notch root strain at fracture was found to be the same as the uniaxial tensile fracture strain over this temperature interval. These results were interpreted as showing the cleavage fracture of polycrystalline zinc to be shear-stress or initiation controlled, as predicted by Stroh's dislocation model of cleavage.

Why is it possible to detect doped regions of semiconductors in low voltage SEM:a review and update

There is an urgent need for fast, non-destructive and quantitative two-dimensional dopant profiling of modern and future ultra large-scale semiconductor devices. The low voltage scanning electron microscope (LVSEM) has emerged to satisfy this need, in part, whereby it is possible to detect different secondary electron yield values (brightness in the SEM signal) from the p-type to the n-type doped regions as well as different brightness levels from the same dopant type. The mechanism that gives rise to such a secondary electron (SE) contrast effect is not fully understood, however. A review of the different models that have been proposed to explain this SE contrast is given. We report on new experiments that support the proposal that this contrast is due to the establishment of metal-to-semiconductor surface contacts. Further experiments showing the effect of instrument parameters including the electron dose, the scan speeds and the electron beam energy on the SE contrast are also reported. Preliminary results on the dependence of the SE contrast on the existence of a surface structure featuring metal-oxide semiconductor (MOS) are also reported. Copyright © 2005 John Wiley & Sons, Ltd.

Effect of methane concentration in hydrogen plasma on hydrogen impurity incorporation in thick large-grained polycrystalline diamond films

We investigate the impact of methane concentration in hydrogen plasma on the growth of large-grained polycrystalline diamond (PCD) films and its hydrogen impurity incorporation. The diamond samples were produced using high CH4 concentration in H2 plasma and high power up to 4350 W and high pressure (either 105 or 110 Torr) in a microwave plasma chemical vapor deposition (MPCVD) system. The thickness of the free-standing diamond films varies from 165 µm to 430 µm. Scanning electron microscopy (SEM), micro-Raman spectroscopy and Fourier-transform infrared (FTIR) spectroscopy were used to characterize the morphology, crystalline and optical quality of the diamond samples, and bonded hydrogen impurity in the diamond films, respectively. Under the conditions employed here, when methane concentration in the gas phase increases from 3.75% to 7.5%, the growth rate of the PCD films rises from around 3.0 µm/h up to 8.5 µm/h, and the optical active bonded hydrogen impurity content also increases more than one times, especially the two CVD diamond specific H related infrared absorption peaks at 2818 and 2828 cm−1 rise strongly; while the crystalline and optical quality of the MCD films decreases significantly, namely structural defects and non-diamond carbon phase content also increases a lot with increasing of methane concentration. Based on the results, the relationship between methane concentration and diamond growth rate and hydrogen impurity incorporation including the form of bonded infrared active hydrogen impurity in CVD diamonds was analyzed and discussed. The effect of substrate temperature on diamond growth was also briefly discussed. The experimental findings indicate that bonded hydrogen impurity in CVD diamond films mainly comes from methane rather than hydrogen in the gas source, and thus can provide experimental evidence for the theoretical study of the standard methyl species dominated growth mechanism of CVD diamonds grown with methane/hydrogen mixtures.