Role of plasma in femtosecond laser pulse propagation

This paper describes physics of nonlinear ultra-short laser pulse propagation affected by plasma created by the pulse itself. Major applications are also discussed. Nonlinear propagation of the femtosecond laser pulses in gaseous and solid transparent dielectric media is a fundamental physical phenomenon in a wide range of important applications such as laser lidars, laser micro-machining (ablation) and microfabrication etc. These applications require very high intensity of the laser field, typically 1013–1015 TW/cm2. Such high intensity leads to significant ionisation and creation of electron-ion or electron-hole plasma. The presence of plasma results into significant multiphoton and plasma absorption and plasma defocusing. Consequently, the propagation effects appear extremely complex and result from competitive counteraction of the above listed effects and Kerr effect, diffraction and dispersion. The theoretical models used for consistent description of laser-plasma interaction during femtosecond laser pulse propagation are derived and discussed. It turns out that the strongly nonlinear effects such self-focusing followed by the pulse splitting are essential. These phenomena feature extremely complex dynamics of both the electromagnetic field and plasma density with different spatio-temporal structures evolving at the same time. Some numerical approaches capable to handle all these complications are also discussed. ©2006 American Institute of Physics

Plasma assisted femtosecond laser inscription in dielectrics

Principles of the femtosecond fabrication of the optoelectronic components in glass are explained and illustrated by examples of the in-bulk writing. The results of the experimental investigation of the dependence of the induced index change on the pulse energy and the numerical modelling of the corresponding laser-glass interaction are presented. The distribution of the plasma density is simulated that may bridge the gap between the models of the pulse propagation and the induced permanent refractive index change. © 2006 American Institute of Physics.

Role of plasma in femtosecond laser pulse propagation

This paper describes physics of nonlinear ultra‐short laser pulse propagation affected by plasma created by the pulse itself. Major applications are also discussed. Nonlinear propagation of the femtosecond laser pulses in gaseous and solid transparent dielectric media is a fundamental physical phenomenon in a wide range of important applications such as laser lidars, laser micro‐machining (ablation) and microfabrication etc. These applications require very high intensity of the laser field, typically 1013–1015 TW/cm2. Such high intensity leads to significant ionisation and creation of electron‐ion or electron‐hole plasma. The presence of plasma results into significant multiphoton and plasma absorption and plasma defocusing. Consequently, the propagation effects appear extremely complex and result from competitive counteraction of the above listed effects and Kerr effect, diffraction and dispersion. The theoretical models used for consistent description of laser‐plasma interaction during femtosecond laser pulse propagation are derived and discussed. It turns out that the strongly nonlinear effects such self‐focusing followed by the pulse splitting are essential. These phenomena feature extremely complex dynamics of both the electromagnetic field and plasma density with different spatio‐temporal structures evolving at the same time. Some numerical approaches capable to handle all these complications are also discussed.

Surface:plasma interactions in GaAs subjected to capacitively coupled RF plasmas

Surface compositional changes in GaAs due to RF plasmas of different gases have been investigated by XPS and etch rates were measured using AFM. Angular Resolved XPS (ARXPS) was also employed for depth analysis of the composition of the surface layers. An important role in this study was determination of oxide thickness using XPS data. The study of surface - plasma interaction was undertaken by correlating results of surface analysis with plasma diagnosis. Different experiments were designed to accurately measure the BEs associated with the Ga 3d, Ga 2P3/2 and LMM peaks using XPS analysis and propose identification in terms of the oxides of GaAs. Along with GaAs wafers, some reference compounds such as metallic Ga and Ga2O3 powder were used. A separate study aiming the identification of the GaAs surface oxides formed on the GaAs surface during and after plasma processing was undertaken. Surface compositional changes after plasma treatment, prior to surface analysis are considered, with particular reference to the oxides formed in the air on the activated surface. Samples exposed to ambient air for different periods of time and also to pure oxygen were analysed. Models of surface processes were proposed for explanation of the stoichiometry changes observed with the inert and reactive plasmas used. In order to help with the understanding of the mechanisms responsible for surface effects during plasma treatment, computer simulation using SRIM code was also undertaken. Based on simulation and experimental results, models of surface phenomena are proposed. Discussion of the experimental and simulated results is made in accordance with current theories and published results of different authors. The experimental errors introduced by impurities and also by data acquisition and processing are also evaluated.

Impact of high microwave power on hydrogen impurity trapping in nanocrystalline diamond films grown with simultaneous nitrogen and oxygen addition into methane/hydrogen plasma

In this work, we study for the first time the influence of microwave power higher than 2.0 kW on bonded hydrogen impurity incorporation (form and content) in nanocrystalline diamond (NCD) films grown in a 5 kW MPCVD reactor. The NCD samples of different thickness ranging from 25 to 205 μm were obtained through a small amount of simultaneous nitrogen and oxygen addition into conventional about 4% methane in hydrogen reactants by keeping the other operating parameters in the same range as that typically used for the growth of large-grained polycrystalline diamond films. Specific hydrogen point defect in the NCD films is analyzed by using Fourier-transform infrared (FTIR) spectroscopy. When the other operating parameters are kept constant (mainly the input gases), with increasing of microwave power from 2.0 to 3.2 kW (the pressure was increased slightly in order to stabilize the plasma ball of the same size), which simultaneously resulting in the rise of substrate temperature more than 100 °C, the growth rate of the NCD films increases one order of magnitude from 0.3 to 3.0 μm/h, while the content of hydrogen impurity trapped in the NCD films during the growth process decreases with power. It has also been found that a new H related infrared absorption peak appears at 2834 cm-1 in the NCD films grown with a small amount of nitrogen and oxygen addition at power higher than 2.0 kW and increases with power higher than 3.0 kW. According to these new experimental results, the role of high microwave power on diamond growth and hydrogen impurity incorporation is discussed based on the standard growth mechanism of CVD diamonds using CH4/H2 gas mixtures. Our current experimental findings shed light into the incorporation mechanism of hydrogen impurity in NCD films grown with a small amount of nitrogen and oxygen addition into methane/hydrogen plasma.