Broadly tunable InGaAsP-InP strained multiquantum-well external cavity diode laser

In this letter, we demonstrate a broadly tunable InGaAsInP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 14941667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated. © 2006 IEEE.

Phase synchronization of a two-channel phase-sensitive amplifier based on optical injection-locking of InP quantum-dash mode-locked lasers

A synchronization scheme for a two-channel phase sensitive amplifier is implemented based on the injection-locking of single InP quantum-dash mode-locked laser. Error free performance with penalty <1 dB is demonstrated for both channels. © 2011 Optical Society of America.

Progress toward 100-G digital coherent pluggables using InP-based photonics

A new generation of high-capacity WDM systems with extremely robust performance has been enabled by coherent transmission and digital signal processing. To facilitate widespread deployment of this technology, particularly in the metro space, new photonic components and subsystems are being developed to support cost-effective, compact, and scalable transceivers. We briefly review the recent progress in InP-based photonic components, and report numerical simulation results of an InP-based transceiver comprising a dual-polarization I/Q modulator and a commercial DSP ASIC. Predicted performance penalties due to the nonlinear response, lower bandwidth, and finite extinction ratio of these transceivers are less than 1 and 2 dB for 100-G PM-QPSK and 200-G PM-16QAM, respectively. Using the well-established Gaussian-Noise model, estimated system reach of 100-G PM-QPSK is greater than 600 km for typical ROADM-based metro-regional systems with internode losses up to 20 dB. © 1983-2012 IEEE.

InP-based active and passive components for communication systems at 2 μm

Progress on advanced active and passive photonic components that are required for high-speed optical communications over hollow-core photonic bandgap fiber at wavelengths around 2 μm is described in this paper. Single-frequency lasers capable of operating at 10 Gb/s and covering a wide spectral range are realized. A comparison is made between waveguide and surface normal photodiodes with the latter showing good sensitivity up to 15 Gb/s. Passive waveguides, 90° optical hybrids, and arrayed waveguide grating with 100-GHz channel spacing are demonstrated on a large spot-size waveguide platform. Finally, a strong electro-optic effect using the quantum confined Stark effect in strain-balanced multiple quantum wells is demonstrated and used in a Mach-Zehnder modulator capable of operating at 10 Gb/s.

Ion bombardment induced compositional changes in compound semiconductor surfaces studied by XPS combined with LEISS

Surface compositional change of GaP, GaAs, GaSb, InP, InAs, InSb, GeSi and CdSe single crystals due to low keV noble gas ion beam bombardment has been investigated by combining X-ray Photoelectron Spectroscopy (XPS) and Low Energy Ion Scattering Spectroscopy (LEISS). The purpose of using this complementary analytical method is to obtain more complete experimental evidence of ion beam modification in surfaces of compound semiconductors and GeSi alloy to improve the understanding of the mechanisms responsible for these effects. Before ion bombardment the sample surfaces were analysed nondestructively by Angular Resolved XPS (ARXPS) and LEISS to get the initial distribution of surface composition. Ion bombardment experiments were carried out using 3keV argon ions with beam current of 1μA for a period of 50 minutes, compositional changes in the surfaces of compound semiconductors and GeSi alloy were monitored with normal XPS. After ion bombardment the surfaces were re-examined with ARXPS and LEISS. Both XPS and LEISS results showed clearly that ion bombardment will change the compositional distribution in the compound semiconductor and GeSi surfaces. In order to explain the observed experimental results, two major theories in this field, Sigmund linear collision cascade theory and the thermodynamic models based on bombardment induced Gibbsian surface segregation and diffusion, were investigated. Computer simulation using TRIM code was also carried out for assistance to the theoretical analysis. Combined the results obtained from XPS and LEISS analyses, ion bombardment induced compositional changes in compound semiconductor and GeSi surfaces are explained in terms of the bombardment induced Gibbsian surface segregation and diffusion.

Evaluation on a 60 GHz radio over fiber system employing photonic up conversion and optically beam formed linear array antenna for broadband indoor access

In this study, two linear coplanar array antennas based on Indium Phosphide (InP) substrate are designed, presented and compared in terms of bandwidth and gain. Slot introduction in combination with coplanar structure is investigated, providing enhanced antenna gain and bandwidth at the 60 GHz frequency band. In addition the proposed array antennas are evaluated in terms of integration with a high-speed photodiode and investigated in terms of matching, providing a bandwidth that reaches 2 GHz. Moreover a potential beam forming scenario combined with photonic up-conversion scheme has been proposed. © 2013 IEEE.