Faster radial strain relaxation in InAs-GaAs core-shell heterowires

The structure of wurtzite and zinc blende InAs-GaAs (001) core-shell nanowires grown by molecular beam epitaxy on GaAs (001) substrates has been investigated by transmission electron microscopy. Heterowires with InAs core radii exceeding 11 nm, strain relax through the generation of misfit dislocations, given a GaAs shell thickness greater than 2.5 nm. Strain relaxation is larger in radial directions than axial, particularly for shell thicknesses greater than 5.0 nm, consistent with molecular statics calculations that predict a large shear stress concentration at each interface corner. © 2012 American Institute of Physics.

202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved. ©2010 IEEE.

3190-3275 nm tuneable, room temperature, external cavity InAs/AlSb Quantum Cascade Laser

We demonstrated a room temperature, tuneable, external cavity Quantum Cascade Laser for the use in compact spectroscopic gas sensing system. Wavelength tuning of 85 nm between 3190 nm and 3275 nm was achieved at room temperature.

InAs/AlSb widely tunable external cavity quantum cascade laser around 3.2 μm

Room temperature, tunable, external-cavity short-wavelength InAs/AlSb quantum cascade laser (QCL) is reported. Wavelength tuning of 85 nm for the spectral range between 3190 nm and 3275 nm has been achieved by rotating the diffraction grating forming the external cavity. To suppress lasing inside the QCL cavity, its ridge was tilted by 7° at the external cavity end. The optimal tilting angle of the laser ridge was chosen by careful consideration of the return losses of the TM-polarized waveguide mode from the diffraction grating in a quasi-Littrow configuration and the Fabry-Pérot feedback from the tilted laser facet. No antireflection coating was used. © 2013 American Institute of Physics.

Broadly tunable high-power InAs/GaAs quantum-dot external cavity diode lasers

A record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser with a tuning range of 202 nm (1122 nm-1324 nm) is demonstrated. A maximum output power of 480 mW and a side-mode suppression ratio greater than 45 dB are achieved in the central part of the tuning range. We exploit a number of strategies for enhancing the tuning range of external cavity quantum-dot lasers. Different waveguide designs, laser configurations and operation conditions (pump current and temperature) are investigated for optimization of output power and tunability. (C) 2010 Optical Society of America

Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals? difference frequency ~1 THz.(C) 2012 American Institute of Physics.

Co3O4 nanostructures with a high rate performance as anode materials for lithium-ion batteries, prepared via book-like cobalt-organic frameworks

The self-assembly of cobalt coordination frameworks (Co-CPs) with a two-dimensional morphology is demonstrated by a solvothermal method. The morphology of the Co-CPs has been controlled by various solvothermal conditions. The two-dimensional nanostructures agglomerated by Co3O4 nanoparticles remained after the pyrolysis of the Co-CPs. The as-synthesized Co3O4 anode material is characterized by cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS) and galvanostatic charge-discharge measurements. The morphology of Co3O4 plays a crucial role in the high performance anode materials for lithium batteries. The Co3O4 nanoparticles with opened-book morphology deliver a high capacity of 597 mA h g-1 after 50 cycles at a current rate of 800 mA g-1. The opened-book morphology of Co3O4 provides efficient lithium ion diffusion tunnels and increases the electrolyte/Co3O4 contact/interfacial area. At a relatively high current rate of 1200 mA g-1, Co3O4 with opened-book morphology delivers an excellent rate capability of 574 mA h g-1.

Synthesis and characterization of some carbon based nanostructures

Carbon thin films were synthesized using the original Thermionic Vacuum Arc (TVA) method. Mechanical properties were investigated using Micro Materials NanoTest 500 instrument using a NT Berkovich indenter. XPS provides a quantitative analysis of the surface composition and X-ray generated Auger electron spectroscopy (XAES) performed by Thermoelectron ESCALAB 250 revealed information about the sp3:sp2 ratio of the carbon bondings. Structure and morphology was studied by Transmission Electron Microscope CM120ST, providing information on the grain size distribution of the crystalline diamond structures. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrocatalytic regeneration of atmospherically aged MoS2 nanostructures via solution-phase sulfidation

The performance of MoS2 as a hydrogen evolution catalyst is diminished by exposure to air. We demonstrate a solution phase technique to resulfidate MoSxO2-x using Na2S2O3. The success of the method was judged by performance as a H+ reduction catalyst. Following sulfidation samples displayed a favourable decrease in both onset potential and Tafel slope, with the best decreasing from -0.23 V to -0.18 V (vs. SHE), and 282 mV dec-1 to 87 mV dec-1 respectively. Ageing studies indicate that this method may be used to recycle the MoS2 repeatedly without losing catalytic performance, although repeated sulfidation did result in homogenisation of the nanostructure.

Broadly tunable dual-wavelength InAs/GaAs quantum-dot laser for THz generation

We demonstrate an ultra-compact, room-Temperature, continuous-wave, broadly-Tunable dual-wavelength InAs/GaAs quantum-dot external-cavity diode laser in the spectral region between 1150 nm and 1301 nm with maximum output power of 280 mW. This laser source generating two modes with tunable difference-frequency (300 GHz-30 THz) has a great potential to replace commonly used bulky lasers for THz generation in photomixer devices.

Synthesis and characterization of some carbon based nanostructures

The aim of present paper is to present the latest results on investigations of the carbon thin film deposited by Thermionic Vacuum Arc (TVA) method and laser pyrolysis. X-ray photoelectron spectroscopy (XPS) and X-ray generated Auger electron spectroscopy (XAES) were used to determine composition and sp2 to sp3 ratios in the outer layers of the film surfaces. The analyses were conducted in a Thermoelectron ESCALAB 250 electron spectrometer equipped with a hemispherical sector energy analyser. Monochromated Al K X-radiation was employed for the XPS examination, at source excitation energy of 15 KeV and emission current of 20 mA. Analyzer pass energy of 20 eV with step size of 0.1 eV and dwell time of 100 ms was used throughout. © 2010 SPIE.

A randomized double-blind placebo-controlled crossover trial of sodium nitrate in patients with stable angina INAS

In an aging western population, a significant number of patients continue to suffer from angina once all revascularization and optimal medical treatment options are exhausted. Under experimental conditions, oral supplementation with inorganic nitrate was shown to exhibit a blood pressure-lowering effect, and has also been shown to promote angiogenesis, improve endothelial dysfunction and mitochondrial efficiency in skeletal muscle. It is unknown whether similar changes occur in cardiac muscle. In the current study, we investigate whether oral sodium nitrate treatment will improve myocardial ischemia in patients with stable angina.

Large scale fabrication of nitrogen vacancy-embedded diamond nanostructures for single-photon source applications

Some color centers in diamond can serve as quantum bits which can be manipulated with microwave pulses and read out with laser, even at room temperature. However, the photon collection efficiency of bulk diamond is greatly reduced by refraction at the diamond/air interface. To address this issue, we fabricated arrays of diamond nanostructures, differing in both diameter and top end shape, with HSQ and Cr as the etching mask materials, aiming toward large scale fabrication of single-photon sources with enhanced collection efficiency made of nitrogen vacancy (NV) embedded diamond. With a mixture of O2 and CHF3 gas plasma, diamond pillars with diameters down to 45 nm were obtained. The top end shape evolution has been represented with a simple model. The tests of size dependent single-photon properties confirmed an improved single-photon collection efficiency enhancement, larger than tenfold, and a mild decrease of decoherence time with decreasing pillar diameter was observed as expected. These results provide useful information for future applications of nanostructured diamond as a single-photon source.