Optimized design of high power mid-infrared Er3+, Pr3+ -codoped ZBLAN fiber laser

Based on the rate equations describing the operation of the Er3+, Pr3+ -codoped ZBLAN fiber lasers with different pump configurations, theoretical calculations that relate to the population characteristics and optimization of CW operation of high power Er3+, Pr3+ :ZBLAN double-clad fiber lasers are presented. Using the measured ET (energy-transfer), ETU (energy-transfer-upconversion) and CR (cross-relaxation) parameters relevant to Er3+, Pr3+ -codoped ZBLAN, a good agreement between the theoretical results from the model and recently reported experimental measurements is obtained. The effects on the slope efficiency of a number of laser parameters including fiber length, reflectance of the output mirror and pumping configuration are quantitatively analyzed and used for the design and optimization of high power Er3+, Pr3+ -codoped ZBLAN fiber lasers.

Optimized design of high power mid-infrared Er3+, Pr3+ -codoped ZBLAN fiber laser

Based on the rate equations describing the operation of the Er3+, Pr3+ -codoped ZBLAN fiber lasers with different pump configurations, theoretical calculations that relate to the population characteristics and optimization of CW operation of high power Er3+, Pr3+ :ZBLAN double-clad fiber lasers are presented. Using the measured ET (energy-transfer), ETU (energy-transfer-upconversion) and CR (cross-relaxation) parameters relevant to Er3+, Pr3+ -codoped ZBLAN, a good agreement between the theoretical results from the model and recently reported experimental measurements is obtained. The effects on the slope efficiency of a number of laser parameters including fiber length, reflectance of the output mirror and pumping configuration are quantitatively analyzed and used for the design and optimization of high power Er3+, Pr3+ -codoped ZBLAN fiber lasers.

High-frequency conductivity of optically excited charge carriers in hydrogenated nanocrystalline silicon investigated by spectroscopic femtosecond pump-probe reflectivity measurements

We report an investigation into the high-frequency conductivity of optically excited charge carriers far from equilibrium with the lattice. The investigated samples consist of hydrogenated nanocrystalline silicon films grown on a thin film of silicon oxide on top of a silicon substrate. For the investigation, we used an optical femtosecond pump-probe setup to measure the reflectance change of a probe beam. The pump beam ranged between 580 and 820nm, whereas the probe wavelength spanned 770 to 810nm. The pump fluence was fixed at 0.6mJ/cm2. We show that at a fixed delay time of 300fs, the conductivity of the excited electron-hole plasma is described well by a classical conductivity model of a hot charge carrier gas found at Maxwell-Boltzmann distribution, while Fermi-Dirac statics is not suitable. This is corroborated by values retrieved from pump-probe reflectance measurements of the conductivity and its dependence on the excitation wavelength and carrier temperature. The conductivity decreases monotonically as a function of the excitation wavelength, as expected for a nondegenerate charge carrier gas.