83 resultados para High Power Semiconductor Laser

em Aston University Research Archive


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The focusing of multimode laser diode beams is probably the most significant problem that hinders the expansion of the high-power semiconductor lasers in many spatially-demanding applications. Generally, the 'quality' of laser beams is characterized by so-called 'beam propagation parameter' M2, which is defined as the ratio of the divergence of the laser beam to that of a diffraction-limited counterpart. Therefore, M2 determines the ratio of the beam focal-spot size to that of the 'ideal' Gaussian beam focused by the same optical system. Typically, M2 takes the value of 20-50 for high-power broad-stripe laser diodes thus making the focal-spot 1-2 orders of magnitude larger than the diffraction limit. The idea of 'superfocusing' for high-M2 beams relies on a technique developed for the generation of Bessel beams from laser diodes using a cone-shaped lens (axicon). With traditional focusing of multimode radiation, different curvatures of the wavefronts of the various constituent modes lead to a shift of their focal points along the optical axis that in turn implies larger focal-spot sizes with correspondingly increased values of M2. In contrast, the generation of a Bessel-type beam with an axicon relies on 'self-interference' of each mode thus eliminating the underlying reason for an increase in the focal-spot size. For an experimental demonstration of the proposed technique, we used a fiber-coupled laser diode with M2 below 20 and an emission wavelength in ~1μm range. Utilization of the axicons with apex angle of 140deg, made by direct laser writing on a fiber tip, enabled the demonstration of an order of magnitude decrease of the focal-spot size compared to that achievable using an 'ideal' lens of unity numerical aperture. © 2014 SPIE.

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In this letter, we report on a high-power operation of an optically pumped quantum-dot semiconductor disk laser designed for emission at 1180 nm. As a consequence of the optimization of the operation conditions, a record-high continuous-wave output power exceeding 7 W is obtained for this wavelength at a heat-sink temperature of 2 °C. A wavelength tuning over a range of 37 nm is achieved using a birefringent filter inside the cavity.

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Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved. ©2010 IEEE.

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Generation of picosecond pulses with a peak power in excess of 7W and a duration of 24ps from a gain-switched InGaN diode laser is demonstrated for the first time.

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We measured the optical linewidths of a passively mode-locked quantum dot laser and show that, in agreement with theoretical predictions, the modal linewidth exhibits a parabolic dependence with the mode optical frequency. The minimum linewidth follows a Schawlow-Townes behavior with a rebroadening at high power. In addition, the slope of the parabola is proportional to the RF linewidth of the laser and can therefore provide a direct measurement of the timing jitter. Such a measurement could be easily applied to mode-locked semiconductor lasers with a fast repetition rate where the RF linewidth cannot be directly measured.

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A high-power diode-cladding-pumped Ho-doped fluoride glass fiber laser operating in cascade mode is demonstrated. The 5|6 -> 5|7 and 5|7 -> 5|8 laser transitions produced 0:77W at a measured slope efficiency of 12.4% and 0:24Wat a measured slope efficiency of 5.2%, respectively. Using a long fiber length, which forced a large threshold for the 5|7 -> 5|8 transition, a wavelength of 3:002 µm was measured at maximum output power, making this system the first watt-level fiber laser operating in the mid-IR.

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Based on the rate equations describing the operation of the Er3+, Pr3+ -codoped ZBLAN fiber lasers with different pump configurations, theoretical calculations that relate to the population characteristics and optimization of CW operation of high power Er3+, Pr3+ :ZBLAN double-clad fiber lasers are presented. Using the measured ET (energy-transfer), ETU (energy-transfer-upconversion) and CR (cross-relaxation) parameters relevant to Er3+, Pr3+ -codoped ZBLAN, a good agreement between the theoretical results from the model and recently reported experimental measurements is obtained. The effects on the slope efficiency of a number of laser parameters including fiber length, reflectance of the output mirror and pumping configuration are quantitatively analyzed and used for the design and optimization of high power Er3+, Pr3+ -codoped ZBLAN fiber lasers.

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A high-power diode-cladding-pumped Ho-doped fluoride glass fiber laser operating in cascade mode is demonstrated. The 5|6 -> 5|7 and 5|7 -> 5|8 laser transitions produced 0:77W at a measured slope efficiency of 12.4% and 0:24Wat a measured slope efficiency of 5.2%, respectively. Using a long fiber length, which forced a large threshold for the 5|7 -> 5|8 transition, a wavelength of 3:002 µm was measured at maximum output power, making this system the first watt-level fiber laser operating in the mid-IR.

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Based on the rate equations describing the operation of the Er3+, Pr3+ -codoped ZBLAN fiber lasers with different pump configurations, theoretical calculations that relate to the population characteristics and optimization of CW operation of high power Er3+, Pr3+ :ZBLAN double-clad fiber lasers are presented. Using the measured ET (energy-transfer), ETU (energy-transfer-upconversion) and CR (cross-relaxation) parameters relevant to Er3+, Pr3+ -codoped ZBLAN, a good agreement between the theoretical results from the model and recently reported experimental measurements is obtained. The effects on the slope efficiency of a number of laser parameters including fiber length, reflectance of the output mirror and pumping configuration are quantitatively analyzed and used for the design and optimization of high power Er3+, Pr3+ -codoped ZBLAN fiber lasers.

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Wavelength bistability between 1245nm and 1295nm is demonstrated in a multi-section quantum-dot laser, controlled via the reverse bias on the saturable absorber. Continuous-wave or mode-locked regimes are achieved (output power up to 25mW and 17mW). © OSA/CLEO 2011.

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Wavelength bistability and tunability are demonstrated in a two-sectional quantum-dot mode-locked laser with a nonidentical capping layer structure. The continuous wave output power of 30 mW (25 mW) and mode-locked average power of 27 mW (20 mW) are achieved for 1245 nm (1295 nm) wavelengths, respectively, under the injection current of 300 mA. The largest switching range of more than 50 nm and wavelength tuning range with picosecond pulses and stable lasing wavelengths between 1245 and 1295 nm are demonstrated for gain current of 300 and 330 mA. © 1995-2012 IEEE.

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This paper presents the current status of our research in mode-locked quantum-dot edge-emitting laser diodes, particularly highlighting the recent progress in spectral and temporal versatility of both monolithic and external-cavity laser configurations. Spectral versatility is demonstrated through broadband tunability and novel mode-locking regimes that involve distinct spectral bands, such as dual-wavelength mode-locking, and robust high-power wavelength bistability. Broad tunability of the pulse repetition rate is also demonstrated for an external-cavity mode-locked quantum-dot laser, revealing a nearly constant pulse peak power at different pulse repetition rates. High-energy and low-noise pulse generations are demonstrated for low-pulse repetition rates. These recent advances confirm the potential of quantum-dot lasers as versatile, compact, and low-cost sources of ultrashort pulses. © 2011 IEEE.

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We report on a record-high output power from an optically pumped quantum-dot vertical-external-cavity surface-emitting laser, optimized for high-power emission at 1040 nm. A maximum continuous-wave output power of 8.41 W is obtained at a heat sink temperature of 1.5 °C. By inserting a birefringent filter inside the laser cavity, a wavelength tuning over a range of 45 nm is achieved. © 2014 IEEE.

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We report on high power issues related to the reliability of fibre Bragg gratings inscribed with an infrared femtosecond laser using the point-by-point writing method. Conventionally, fibre Bragg gratings have usually been written in fibres using ultraviolet light, either holographically or using a phase mask. Since the coating is highly absorbing in the UV, this process normally requires that the protective polymer coating is stripped prior to inscription, with the fibre then being recoated. This results in a time consuming fabrication process that, unless great care is taken, can lead to fibre strength degradation, due to the presence of surface damage. The recent development of FBG inscription using NIR femtosecond lasers has eliminated the requirement for the stripping of the coating. At the same time the ability to write gratings point-by-point offers the potential for great flexibility in the grating design. There is, however, a requirement for reliability testing of these gratings, particularly for use in telecommunications systems where high powers are increasingly being used in long-haul transmission systems making use of Raman amplification. We report on a study of such gratings which has revealed the presence of broad spectrum power losses. When high powers are used, even at wavelengths far removed from the Bragg condition, these losses produce an increase in the fibre temperature due to absorption in the coating. We have monitored this temperature rise using the wavelength shift in the grating itself. At power levels of a few watts, various temperature increases were experienced ranging from a few degrees up to the point where the buffer completely melts off the fibre at the grating site. Further investigations are currently under way to study the optical loss mechanisms in order to optimise the inscription mechanism and minimise such losses.

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The modulation instability (MI) is one of the main factors responsible for the degradation of beam quality in high-power laser systems. The so-called B-integral restriction is commonly used as the criteria for MI control in passive optics devices. For amplifiers the adiabatic model, assuming locally the Bespalov-Talanov expression for MI growth, is commonly used to estimate the destructive impact of the instability. We present here the exact solution of MI development in amplifiers. We determine the parameters which control the effect of MI in amplifiers and calculate the MI growth rate as a function of those parameters. The safety range of operational parameters is presented. The results of the exact calculations are compared with the adiabatic model, and the range of validity of the latest is determined. We demonstrate that for practical situations the adiabatic approximation noticeably overestimates MI. The additional margin of laser system design is quantified. © 2010 Optical Society of America.