Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness

We report a process for the lift-off of an ultrathin Si layer. By plasma hydrogenation of a molecular-beam-epitaxy-grown heterostructure of SiSb-doped-SiSi, ultrashallow cracking is controlled to occur at the depth of the Sb-doped layer. Prior to hydrogenation, an oxygen plasma treatment is used to induce the formation of a thin oxide layer on the surface of the heterostructure. Chemical etching of the surface oxide layer after hydrogenation further thins the thickness of the separated Si layer to be only 15 nm. Mechanisms of hydrogen trapping and strain-facilitated cracking are discussed. © 2005 American Institute of Physics.

Rutting-induced permeability loss of open graded friction course mixtures

Functionality of an open graded friction course (OGFC) depends on the high interconnected air voids or pores of the OGFC mixture. The authors' previous study indicated that the pores in the OGFC mixture were easily clogged by rutting deformation. Such a deformation-related clogging can cause a significant rutting-induced permeability loss in the OGFC mixture. The objective of this study was to control and reduce the rutting-induced permeability loss of the OGFC based on mixture design and layer thickness. Eight types of the OGFC mixtures with different air void contents, gradations, and nominal maximum aggregate sizes were fabricated in the laboratory. Wheel-tracking rutting tests were conducted on the OGFC slabs to simulate the deformation-related clogging. Permeability tests after different wheel load applications were performed on the rutted OGFC slabs using a falling head permeameter developed in the authors' previous study. The relationships between permeability loss and rutting depth as well as dynamic stability were developed based on the eight OGFC mixtures' test results. The thickness effects of the single-layer and the two-layer OGFC slabs were also discussed in terms of deformation-related clogging and the rutting-induced permeability loss. Results showed that the permeability coefficient decreases linearly with an increasing rutting depth of the OGFC mixtures. Rutting depth was recommended as a design index to control permeability loss of the OGFC mixture rather than the dynamic stability. Permeability loss due to deformation-related clogging can be effectively reduced by using a thicker single-layer OGFC or two-layer OGFC.

The development of a wax layer on the interior wall of a circular pipe transporting heated oil

In this article we develop a simple model to describe the evolution of a depositional wax layer on the inner surface of a circular pipe transporting heated oil, which contains dissolved wax. When the outer pipe surface is cooled sufficiently, the growth of a wax layer is initiated on the inner pipe wall, and this evolves to a saturated steady state thickness. The model proposed is based on fundamental balances of heat flow from the oil, into the wax layer, and across the pipe wall. We present an analysis of the model, examine a relevant asymptotic limit in which the full details of the solution to the model are available and develop an efficient numerical method (based on the method of fundamental solutions) for producing approximations of the model solution. The mathematical structure of the model is that of a free boundary evolution problem of generalised Stefan type. © The Author, 2014.

The development of a wax layer on the interior wall of a circular pipe transporting heated oil

In this article we develop a simple model to describe the evolution of a depositional wax layer on the inner surface of a circular pipe transporting heated oil, which contains dissolved wax. When the outer pipe surface is cooled sufficiently, the growth of a wax layer is initiated on the inner pipe wall, and this evolves to a saturated steady state thickness. The model proposed is based on fundamental balances of heat flow from the oil, into the wax layer, and across the pipe wall. We present an analysis of the model, examine a relevant asymptotic limit in which the full details of the solution to the model are available and develop an efficient numerical method (based on the method of fundamental solutions) for producing approximations of the model solution. The mathematical structure of the model is that of a free boundary evolution problem of generalised Stefan type. © The Author, 2014.

Assembly of a high-dielectric constant thin TiOX layer directly on H-terminated semiconductor diamond

A high-dielectric constant (high-k) TiOx thin layer was fabricated on hydrogen-terminated diamond (H-diamond) surface by low temperature oxidation of a thin titanium layer in ambient air. The metallic titanium layer was deposited by sputter deposition. The dielectric constant of the resultant TiOx was calculated to be around 12. The capacitance density of the metal-oxide-semiconductor (MOS) based on the TiOx/H-diamond was as high as 0.75 µF/cm2 contributed from the high-k value and the very thin thickness of the TiOx layer. The leakage current was lower than 10-13 A at reverse biases and 10-7A at the forward bias of -2 V. The MOS field-effect transistor based on the high-k TiOx/H-diamond was demonstrated. The utilization of the high-k TiOx with a very thin thickness brought forward the features of an ideally low subthreshold swing slope of 65 mV per decade and improved drain current at low gate voltages. The advantages of the utilization high-k dielectric for diamond MOSFETs are anticipated.