Optical autocorrelator that uses a surface-emitting second-harmonic generator on (211)B GaAs

An optical autocorrelator grown on a (211)B GaAs substrate that uses visible surface-emitted second-harmonic generation is demonstrated. The (211)B orientation needs TE mode excitation only, thus eliminating the problem of the beating between the TE and TM modes that is required for (100)-grown devices; it also has the advantage of giving higher upconversion efficiency than (111) growth. Values of waveguide loss and the difference in the effective refractive index between the TE(0) and TE(1) modes were also obtained from the autocorrelation experiment.

Faster radial strain relaxation in InAs-GaAs core-shell heterowires

The structure of wurtzite and zinc blende InAs-GaAs (001) core-shell nanowires grown by molecular beam epitaxy on GaAs (001) substrates has been investigated by transmission electron microscopy. Heterowires with InAs core radii exceeding 11 nm, strain relax through the generation of misfit dislocations, given a GaAs shell thickness greater than 2.5 nm. Strain relaxation is larger in radial directions than axial, particularly for shell thicknesses greater than 5.0 nm, consistent with molecular statics calculations that predict a large shear stress concentration at each interface corner. © 2012 American Institute of Physics.

Optical autocorrelator that uses a surface-emitting second-harmonic generator on (211)B GaAs

An optical autocorrelator grown on a (211)B GaAs substrate that uses visible surface-emitted second-harmonic generation is demonstrated. The (211)B orientation needs TE mode excitation only, thus eliminating the problem of the beating between the TE and TM modes that is required for (100)-grown devices; it also has the advantage of giving higher upconversion efficiency than (111) growth. Values of waveguide loss and the difference in the effective refractive index between the TE(0) and TE(1) modes were also obtained from the autocorrelation experiment.

Computer simulation of radio-frequency methane/hydrogen plasmas and their interaction with GaAs Surfaces

The following thesis describes the computer modelling of radio frequency capacitively coupled methane/hydrogen plasmas and the consequences for the reactive ion etching of (100) GaAs surfaces. In addition a range of etching experiments was undertaken over a matrix of pressure, power and methane concentration. The resulting surfaces were investigated using X-ray photoelectron spectroscopy and the results were discussed in terms of physical and chemical models of particle/surface interactions in addition to the predictions for energies, angles and relative fluxes to the substrate of the various plasma species. The model consisted of a Monte Carlo code which followed electrons and ions through the plasma and sheath potentials whilst taking account of collisions with background neutral gas molecules. The ionisation profile output from the electron module was used as input for the ionic module. Momentum scattering interactions of ions with gas molecules were investigated via different models and compared against results given by quantum mechanical code. The interactions were treated as central potential scattering events and the resulting neutral cascades were followed. The resulting predictions for ion energies at the cathode compared well to experimental ion energy distributions and this verified the particular form of the electrical potentials used and their applicability in the particular geometry plasma cell used in the etching experiments. The final code was used to investigate the effect of external plasma parameters on the mass distribution, energy and angles of all species impingent on the electrodes. Comparisons of electron energies in the plasma also agreed favourably with measurements made using a Langmuir electric probe. The surface analysis showed the surfaces all to be depleted in arsenic due to its preferential removal and the resultant Ga:As ratio in the surface was found to be directly linked to the etch rate. The etch rate was determined by the methane flux which was predicted by the code.

Surface:plasma interactions in GaAs subjected to capacitively coupled RF plasmas

Surface compositional changes in GaAs due to RF plasmas of different gases have been investigated by XPS and etch rates were measured using AFM. Angular Resolved XPS (ARXPS) was also employed for depth analysis of the composition of the surface layers. An important role in this study was determination of oxide thickness using XPS data. The study of surface - plasma interaction was undertaken by correlating results of surface analysis with plasma diagnosis. Different experiments were designed to accurately measure the BEs associated with the Ga 3d, Ga 2P3/2 and LMM peaks using XPS analysis and propose identification in terms of the oxides of GaAs. Along with GaAs wafers, some reference compounds such as metallic Ga and Ga2O3 powder were used. A separate study aiming the identification of the GaAs surface oxides formed on the GaAs surface during and after plasma processing was undertaken. Surface compositional changes after plasma treatment, prior to surface analysis are considered, with particular reference to the oxides formed in the air on the activated surface. Samples exposed to ambient air for different periods of time and also to pure oxygen were analysed. Models of surface processes were proposed for explanation of the stoichiometry changes observed with the inert and reactive plasmas used. In order to help with the understanding of the mechanisms responsible for surface effects during plasma treatment, computer simulation using SRIM code was also undertaken. Based on simulation and experimental results, models of surface phenomena are proposed. Discussion of the experimental and simulated results is made in accordance with current theories and published results of different authors. The experimental errors introduced by impurities and also by data acquisition and processing are also evaluated.

The resistance of intra-amoebal grown legionella pneumophila

Survival studies were conducted on Legionella pneumophila cells that had been grown intracellulary in Acanthamoeba polyphaga and then exposed to polyhexamethylene biguanide (PHMB), benzisothiazolone (BIT), 5-chloro-N-methylisothiazolone (CMIT) and tetradecyltrimethyl ammonium bromide (TTAB). Susceptibilities were also determined for L.pneumophila grown under nutrient sufficient and iron-, nitrogen- and phosphate-depleted conditions, in a chemically defined medium. BIT was relatively ineffective against cells grown under iron-depletion; in contrast iron-depleted conditions increased the susceptibilities of cells to PHMB, TTAB and CMIT. Cells grown under phosphate-depletion showed a marked increase in sensitivity towards all the biocides. Conversely, the activities of all four biocides were greatly reduced against L.pneumophila grown in amoebae. To study the physiological basis for the increased resistance of intra-amoebal grown legionella, the surface properties of the cells were examined by studying outer membrane proteins (OMs), lipopolysaccharides and cellular fatty acids. Intra-amoebal grown legionella were found to differ in several respects compared to cells grown in vitro; they contained a novel 15-kDal OM protein and a monosaturated straight-chain fatty acid (18:19). These compounds were also found in abundant quantities in the host amoeba. Intra-amoebal grown legionella contained more LPS bands than did in vitro grown organisms and were less susceptible to protease K digestion. Cells grown under phosphate depletion were markedly sensitive to protease K digestion and contained lower levels of LPS. Immunoblot analysis of intra-amoebal grown legionella with anti-acanthamoebal serum revealed that both the surface of the bacteria and sarkosyl extracted OMs contained amoebal proteins. These findings suggest that the 15-kDal OM protein is likely to be of amoebal origin and binds tightly to the OM of the bacterium. It is proposed that disruption of amoebal membranes, as a result of intra-amoebal infection liberates macromolecules, including a 15-kDal polypeptide, a major constituent of the membrane, which associates closely with the surface of the legionellae. Thus L.pneumophila which have extraneous membrane material bound to their surface may respond differently to biocide inactivation, as these macromolecules may act as a penetration barrier to such agents. This phenomenon could contribute to the recalcitrance of legionellae in water systems.

Characterization of oxide layers grown on D9 austenitic stainless steel in lead bismuth eutectic

Lead bismuth eutectic (LBE) is a possible coolant for fast reactors and targets in spallation neutron sources. Its low melting point, high evaporation point, good thermal conductivity, low reactivity, and good neutron yield make it a safe and high performance coolant in radiation environments. The disadvantage is that it is a corrosive medium for most steels and container materials. This study was performed to evaluate the corrosion behavior of the austenitic stainless steel D9 in oxygen controlled LBE. In order to predict the corrosion behavior of steel in this environment detailed analyses have to be performed on the oxide layers formed on these materials and various other relevant materials upon exposure to LBE. In this study the corrosion/oxidation of D9 stainless steel in LBE was investigated in great detail. The oxide layers formed were characterized using atomic force microscopy, magnetic force microscopy, nanoindentation, and scanning electron microscopy with wavelength-dispersive spectroscopy (WDS) to understand the corrosion and oxidation mechanisms of D9 stainless steel in contact with the LBE. What was previously believed to be a simple double oxide layer was identified here to consist of at least 4 different oxide layers. It was found that the inner most oxide layer takes over the grain structure of what used to be the bulk steel material while the outer oxide layer consists of freshly grown oxides with a columnar structure. These results lead to a descriptive model of how these oxide layers grow on this steel under the harsh environments encountered in these applications.

202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved. ©2010 IEEE.

SHG in a low-loss orientation patterned GaAs waveguide

We demonstrate second harmonic generation at 1621 nm in a low-loss orientation-patterned GaAs waveguide pumped by an optical parametric oscillator system. The losses were estimated to be 2.12 dB/cm.

THz emission from quantum dot-based THz antennas pumped by a tunable quantum-dot laser diode

The THz optoelectronics field is now maturing and semiconductor-based THz antenna devices are becoming more widely implemented as analytical tools in spectroscopy and imaging. Photoconductive (PC) THz switches/antennas are driven optically typically using either an ultrashort-pulse laser or an optical signal composed of two simultaneous longitudinal wavelengths which are beat together in the PC material at a THz difference frequency. This allows the generation of (photo)carrier pairs which are then captured over ultrashort timescales usually by defects and trapping sites throughout the active material lattice. Defect-implanted PC materials with relatively high bandgap energy are typically used and many parameters such as carrier mobility and PC gain are greatly compromised. This paper demonstrates the implementation of low bandgap energy InAs quantum dots (QDs) embedded in standard crystalline GaAs as both the PC medium and the ultrafast capture mechanism in a PC THz antenna. This semiconductor structure is grown using standard MBE methods and allows the device to be optically driven efficiently at wavelengths up to ~1.3 µm, in this case by a single tunable dual-mode QD diode laser.

Broadly tunable high-power InAs/GaAs quantum-dot external cavity diode lasers

A record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser with a tuning range of 202 nm (1122 nm-1324 nm) is demonstrated. A maximum output power of 480 mW and a side-mode suppression ratio greater than 45 dB are achieved in the central part of the tuning range. We exploit a number of strategies for enhancing the tuning range of external cavity quantum-dot lasers. Different waveguide designs, laser configurations and operation conditions (pump current and temperature) are investigated for optimization of output power and tunability. (C) 2010 Optical Society of America

Second harmonic generation in a low-loss orientation-patterned GaAs waveguide

The technology of low-loss orientation-patterned gallium arsenide (OP-GaAs) waveguided crystals was developed and realized by reduction of diffraction scattering on the waveguide pattern. The propagation losses in the OP-GaAs waveguide were estimated to be as low as 2.1 dB/cm, thus demonstrating the efficient second harmonic generation at 1621 nm under an external pumping. © 2013 Optical Society of America.

Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals? difference frequency ~1 THz.(C) 2012 American Institute of Physics.

Functional recombinant protein is present in the pre-induction phases of Pichia pastoris cultures when grown in bioreactors, but not shake-flasks

Background - Pichia pastoris is a widely-used host for recombinant protein production; expression is typically driven by methanol-inducible alcohol oxidase (AOX) promoters. Recently this system has become an important source of recombinant G protein-coupled receptors (GPCRs) for structural biology and drug discovery. The influence of diverse culture parameters (such as pH, dissolved oxygen concentration, medium composition, antifoam concentration and culture temperature) on productivity has been investigated for a wide range of recombinant proteins in P. pastoris. In contrast, the impact of the pre-induction phases on yield has not been as closely studied. In this study, we examined the pre-induction phases of P. pastoris bioreactor cultivations producing three different recombinant proteins: the GPCR, human A2a adenosine receptor (hA2aR), green fluorescent protein (GFP) and human calcitonin gene-related peptide receptor component protein (as a GFP fusion protein; hCGRP-RCP-GFP). Results - Functional hA2aR was detected in the pre-induction phases of a 1 L bioreactor cultivation of glycerol-grown P. pastoris. In a separate experiment, a glycerol-grown P. pastoris strain secreted soluble GFP prior to methanol addition. When glucose, which has been shown to repress AOX expression, was the pre-induction carbon source, hA2aR and GFP were still produced in the pre-induction phases. Both hA2aR and GFP were also produced in methanol-free cultivations; functional protein yields were maintained or increased after depletion of the carbon source. Analysis of the pre-induction phases of 10 L pilot scale cultivations also demonstrated that pre-induction yields were at least maintained after methanol induction, even in the presence of cytotoxic concentrations of methanol. Additional bioreactor data for hCGRP-RCP-GFP and shake-flask data for GFP, horseradish peroxidase (HRP), the human tetraspanins hCD81 and CD82, and the tight-junction protein human claudin-1, demonstrated that bioreactor but not shake flask cultivations exhibit recombinant protein production in the pre-induction phases of P. pastoris cultures. Conclusions - The production of recombinant hA2aR, GFP and hCGRP-RCP-GFP can be detected in bioreactor cultivations prior to methanol induction, while this is not the case for shake-flask cultivations of GFP, HRP, hCD81, hCD82 and human claudin-1. This confirms earlier suggestions of leaky expression from AOX promoters, which we report here for both glycerol- and glucose-grown cells in bioreactor cultivations. These findings suggest that the productivity of AOX-dependent bioprocesses is not solely dependent on induction by methanol. We conclude that in order to maximize total yields, pre-induction phase cultivation conditions should be optimized, and that increased specific productivity may result in decreased biomass yields.