A study of the electrical and optical properties of unhydrogenated neon-sputtered amorphous silicon

Films of amorphous silicon (a-Si) were prepared by r.f. sputtering in a Ne plasma without the addition of hydrogen or a halogen. The d.c. dark electrical conductivity, he optical gap and the photoconductivity of the films were investigated for a range of preparation conditions, the sputtering gas pressure, P, the target-substrate spacing, d, the self-bias voltage, Vsb, on the target and the substrate temperature, Ts. The dependence of the electrical and optical properties on these conditions showed that various combinations of P, d and Vsb, at a constant Ts, giving the same product (Pd/V sb) result in films with similar properties, provided that P, d and Vsb remain vithin a certain range. Variation of Pd/Vsb between about 0.2 and 0.8 rrTorr.cm!V varied the dark conductivity over about 4 orders of magnitude, the optical gap by 0.5 eV and the photoconductivity over 4-5 orders of magnitude. This is attributed to controlling the density-of-states distribution in the mobility gap. The temperature-dependence of photoconductivity and the photoresponse of undoped films are in support of this conclusion. Films prepared at relatively high (Pd/Vsb) values and Ts=300 ºc: exhibited low dark-conductivity and high thermal activation energy, optical gap and photoresponse, characteristic properties of a 'low density-of-states material. P-type doping with group-Ill elements (Al, B and Ga) by sputtering from a composite target or from a predoped target (B-.doped) was investigated. The systematic variation of room-temperature conductivity over many orders of magnitude and a Fermi-level shift of about 0.7 eV towards the valence-band edge suggest that substitutional doping had taken place. The effects of preparation conditions on doping efficiency were also investigated. The post-deposition annealing of undoped and doped films were studied for a temperature range from 250 ºC to 470 ºC. It was shown that annealing enhanced the doping efficiency considerably, although it had little effect on the basic material (a-Si) prepared at the optimum conditions (Pd/Vsb=0.8 mTorr.cm/V and Ts=300 $ºC). Preliminary experiments on devices imply potential applications of the present material, such as p-n and MS junctions.

Effect of electron-phonon coupling on transmission through Luttinger liquid hybridized with resonant level

We show that electron-phonon coupling strongly affects transport properties of the Luttinger liquid hybridized with a resonant level. Namely, this coupling significantly modifies the effective energy-dependent width of the resonant level in two different geometries, corresponding to the resonant or antiresonant transmission in the Fermi gas. This leads to a rich phase diagram for a metal-insulator transition induced by the hybridization with the resonant level.

Impurity scattering in a Luttinger liquid with electron-phonon coupling

We study the influence of electron-phonon coupling on electron transport through a Luttinger liquid with an embedded weak scatterer or weak link. We derive the renormalization group (RG) equations, which indicate that the directions of RG flows can change upon varying either the relative strength of the electron-electron and electron-phonon coupling or the ratio of Fermi to sound velocities. This results in a rich phase diagram with up to three fixed points: an unstable one with a finite value of conductance and two stable ones, corresponding to an ideal metal or insulator.

Quantum wire hybridized with a single-level impurity

We have studied low-temperature properties of interacting electrons in a one-dimensional quantum wire (Luttinger liquid) side-hybridized with a single-level impurity. The hybridization induces a backscattering of electrons in the wire which strongly affects its low-energy properties. Using a one-loop renormalization group approach valid for a weak electron-electron interaction, we have calculated a transmission coefficient through the wire, T(epsilon), and a local density of states, nu(epsilon) at low energies epsilon. In particular, we have found that the antiresonance in T(epsilon) has a generalized Breit-Wigner shape with the effective width Gamma(epsilon) which diverges at the Fermi level.

Impurity scattering in Luttinger liquid with electron-phonon coupling

We study the influence of electron-phonon coupling on electron transport through a Luttinger liquid with an embedded weak scatterer or weak link. We derive the renormalization group (RG) equations which indicate that the directions of RG flows can change upon varying either the relative strength of the electron-electron and electron-phonon coupling or the ratio of Fermi to sound velocities. This results in the rich phase diagram with up to three fixed points: an unstable one with a finite value of conductance and two stable ones, corresponding to an ideal metal or insulator.

Bose-Einstein condensate in a quartic potential:static and dynamic properties

In this paper, we present a theoretical study of a Bose-Einstein condensate of interacting bosons in a quartic trap in one, two, and three dimensions. Using Thomas-Fermi approximation, suitably complemented by numerical solutions of the Gross-Pitaevskii equation, we study the ground sate condensate density profiles, the chemical potential, the effects of cross-terms in the quartic potential, temporal evolution of various energy components of the condensate, and width oscillations of the condensate. Results obtained are compared with corresponding results for a bose condensate in a harmonic confinement.

Catching transcriptional regulation by thermostatistical modeling

Gene expression is frequently regulated by multiple transcription factors (TFs). Thermostatistical methods allow for a quantitative description of interactions between TFs, RNA polymerase and DNA, and their impact on the transcription rates. We illustrate three different scales of the thermostatistical approach: the microscale of TF molecules, the mesoscale of promoter energy levels and the macroscale of transcriptionally active and inactive cells in a cell population. We demonstrate versatility of combinatorial transcriptional activation by exemplifying logic functions, such as AND and OR gates. We discuss a metric for cell-to-cell transcriptional activation variability known as Fermi entropy. Suitability of thermostatistical modeling is illustrated by describing the experimental data on transcriptional induction of NF?B and the c-Fos protein.

Seminar 1 impurity in the tomonaga-luttinger model:a functional integral approach

This chapter explains a functional integral approach about impurity in the Tomonaga–Luttinger model. The Tomonaga–Luttinger model of one-dimensional (1D) strongly correlates electrons gives a striking example of non-Fermi-liquid behavior. For simplicity, the chapter considers only a single-mode Tomonaga–Luttinger model, with one species of right- and left-moving electrons, thus, omitting spin indices and considering eventually the simplest linearized model of a single-valley parabolic electron band. The standard operator bosonization is one of the most elegant methods developed in theoretical physics. The main advantage of the bosonization, either in standard or functional form, is that including the quadric electron–electron interaction does not substantially change the free action. The chapter demonstrates the way to develop the formalism of bosonization based on the functional integral representation of observable quantities within the Keldysh formalism.

High-frequency conductivity of optically excited charge carriers in hydrogenated nanocrystalline silicon investigated by spectroscopic femtosecond pump-probe reflectivity measurements

We report an investigation into the high-frequency conductivity of optically excited charge carriers far from equilibrium with the lattice. The investigated samples consist of hydrogenated nanocrystalline silicon films grown on a thin film of silicon oxide on top of a silicon substrate. For the investigation, we used an optical femtosecond pump-probe setup to measure the reflectance change of a probe beam. The pump beam ranged between 580 and 820nm, whereas the probe wavelength spanned 770 to 810nm. The pump fluence was fixed at 0.6mJ/cm2. We show that at a fixed delay time of 300fs, the conductivity of the excited electron-hole plasma is described well by a classical conductivity model of a hot charge carrier gas found at Maxwell-Boltzmann distribution, while Fermi-Dirac statics is not suitable. This is corroborated by values retrieved from pump-probe reflectance measurements of the conductivity and its dependence on the excitation wavelength and carrier temperature. The conductivity decreases monotonically as a function of the excitation wavelength, as expected for a nondegenerate charge carrier gas.

Bosonisation as The Hubbard-Stratonovich transformation

The problem of strongly correlated electrons in one dimension attracted attention of condensed matter physicists since early 50’s. After the seminal paper of Tomonaga [1] who suggested the first soluble model in 1950, there were essential achievements reflected in papers by Luttinger [2] (1963) and Mattis and Lieb [3] (1963). A considerable contribution to the understanding of generic properties of the 1D electron liquid has been made by Dzyaloshinskii and Larkin [4] (1973) and Efetov and Larkin [5] (1976). Despite the fact that the main features of the 1D electron liquid were captured and described by the end of 70’s, the investigators felt dissatisfied with the rigour of the theoretical description. The most famous example is the paper by Haldane [6] (1981) where the author developed the fundamentals of a modern bosonisation technique, known as the operator approach. This paper became famous because the author has rigourously shown how to construct the Fermi creation/anihilation operators out of the Bose ones. The most recent example of such a dissatisfaction is the review by von Delft and Schoeller [7] (1998) who revised the approach to the bosonisation and came up with what they called constructive bosonisation.