8 resultados para Er-doped silicon

em Aston University Research Archive


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We propose a simple Er-doped fiber laser configuration for achieving stable dual-wavelength oscillation at room temperature, in which a high birefringence fiber Bragg grating was used as the wavelength-selective component. Stable dual-wavelength oscillation at room temperature with a wavelength spacing of 0.23 nm and mutually orthogonal polarization stages was achieved by utilizing the polarization hole-burning effect. An amplitude variation of less than 0.7 dB over an 80 s period was obtained for both wavelengths.

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We report a two-stage diode-pumped Er-doped fiber amplifier operating at the wavelength of 1550 nm at the repetition rate of 10-100 kHz with an average output power of up to 10 W. The first stage comprising Er-doped fiber was core-pumped at the wavelength of 1480 nm, whereas the second stage comprising double-clad Er/Yb-doped fiber was clad-pumped at the wavelength of 975 nm. The estimated peak power for the 0.4-nm full-width at half-maximum laser emission at the wavelength of 1550 nm exceeded 4-kW level. The initial 100-ns seed diode laser pulse was compressed to 3.5 ns as a result of the 34-dB total amplification. The observed 30-fold efficient pulse compression reveals a promising new nonlinear optical technique for the generation of high power short pulses for applications in eye-safe ranging and micromachining.

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The development of ultra-long (UL) cavity (hundreds of meters to several kilometres) mode-locked fibre lasers for the generation of high-energy light pulses with relatively low (sub-megahertz) repetition rates has emerged as a new rapidly advancing area of laser physics. The first demonstration of high pulse energy laser of this type was followed by a number of publications from many research groups on long-cavity Ytterbium and Erbium lasers featuring a variety of configurations with rather different mode-locked operations. The substantial interest to this new approach is stimulated both by non-trivial underlying physics and by the potential of high pulse energy laser sources with unique parameters for a range of applications in industry, bio-medicine, metrology and telecommunications. It is well known, that pulse generation regimes in mode-locked fibre lasers are determined by the intra-cavity balance between the effects of dispersion and non-linearity, and the processes of energy attenuation and amplification. The highest per-pulse energy has been achieved in normal-dispersion UL fibre lasers mode-locked through nonlinear polarization evolution (NPE) for self-modelocking operation. In such lasers are generated the so-called dissipative optical solitons. The uncompensated net normal dispersion in long-cavity resonatorsusually leads to very high chirp and, consequently, to a relatively long duration of generated pulses. This thesis presents the results of research Er-doped ultra-long (more than 1 km cavity length) fibre lasers mode-locked based on NPE. The self-mode-locked erbium-based 3.5-km-long all-fiber laser with the 1.7 µJ pulse energy at a wavelength of 1.55 µm was developed as a part of this research. It has resulted in direct generation of short laser pulses with an ultralow repetition rate of 35.1 kHz. The laser cavity has net normal-dispersion and has been fabricated from commercially-available telecom fibers and optical-fiber elements. Its unconventional linear-ring design with compensation for polarization instability ensures high reliability of the self-mode-locking operation, despite the use of a non polarization-maintaining fibers. The single pulse generation regime in all-fibre erbium mode-locking laser based on NPE with a record cavity length of 25 km was demonstrated. Modelocked lasers with such a long cavity have never been studied before. Our result shows a feasibility of stable mode-locked operation even for an ultra-long cavity length. A new design of fibre laser cavity – “y-configuration”, that offers a range of new functionalities for optimization and stabilization of mode-locked lasing regimes was proposed. This novel cavity configuration has been successfully implemented into a long-cavity normal-dispersion self-mode-locked Er-fibre laser. In particular, it features compensation for polarization instability, suppression of ASE, reduction of pulse duration, prevention of in-cavity wave breaking, and stabilization of the lasing wavelength. This laser along with a specially designed double-pass EDFA have allowed us to demonstrate anenvironmentally stable all-fibre laser system able to deliver sub-nanosecond high-energy pulses with low level of ASE noise.

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We propose a simple Er-doped fiber laser configuration for achieving stable dual-wavelength oscillation at room temperature, in which a high birefringence fiber Bragg grating was used as the wavelength-selective component. Stable dual-wavelength oscillation at room temperature with a wavelength spacing of 0.23nm and mutually orthogonal polarisation states was achieved by utilising the polarisation hole burning effect. An amplitude variation of less than 0.7dB over 80s period was obtained for both wavelengths.

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We demonstrate an all-fiber-integrated Er-doped fiber laser operating in the soliton-similariton mode-locking regime. In the similariton part of the cavity, a self-similarly evolving parabolic pulse with highly linear chirp propagates in the presence of normal dispersion. Following an in-line fiber-based birefringent filter, the pulse evolves into a soliton in the part of the cavity with anomalous dispersion. The similariton and the soliton pulses are dechirped to 75.5 and 167.2 fs, respectively, outside of the cavity. Mode-locked operation is very robust, owing to the influence of the two similariton and soliton attractors that predominate each half of the laser cavity. The experimental results are supported with numerical simulations, which provide good agreement.

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Films of amorphous silicon (a-Si) were prepared by r.f. sputtering in a Ne plasma without the addition of hydrogen or a halogen. The d.c. dark electrical conductivity, he optical gap and the photoconductivity of the films were investigated for a range of preparation conditions, the sputtering gas pressure, P, the target-substrate spacing, d, the self-bias voltage, Vsb, on the target and the substrate temperature, Ts. The dependence of the electrical and optical properties on these conditions showed that various combinations of P, d and Vsb, at a constant Ts, giving the same product (Pd/V sb) result in films with similar properties, provided that P, d and Vsb remain vithin a certain range. Variation of Pd/Vsb between about 0.2 and 0.8 rrTorr.cm!V varied the dark conductivity over about 4 orders of magnitude, the optical gap by 0.5 eV and the photoconductivity over 4-5 orders of magnitude. This is attributed to controlling the density-of-states distribution in the mobility gap. The temperature-dependence of photoconductivity and the photoresponse of undoped films are in support of this conclusion. Films prepared at relatively high (Pd/Vsb) values and Ts=300 ºc: exhibited low dark-conductivity and high thermal activation energy, optical gap and photoresponse, characteristic properties of a 'low density-of-states material. P-type doping with group-Ill elements (Al, B and Ga) by sputtering from a composite target or from a predoped target (B-.doped) was investigated. The systematic variation of room-temperature conductivity over many orders of magnitude and a Fermi-level shift of about 0.7 eV towards the valence-band edge suggest that substitutional doping had taken place. The effects of preparation conditions on doping efficiency were also investigated. The post-deposition annealing of undoped and doped films were studied for a temperature range from 250 ºC to 470 ºC. It was shown that annealing enhanced the doping efficiency considerably, although it had little effect on the basic material (a-Si) prepared at the optimum conditions (Pd/Vsb=0.8 mTorr.cm/V and Ts=300 $ºC). Preliminary experiments on devices imply potential applications of the present material, such as p-n and MS junctions.

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Numerical modeling of cascade erbium-doped and holmium-doped fluoride fiber lasers is presented. Fiber lengths were optimized for cascade lasers that had fixed or free-running wavelengths using all known spectroscopic parameters. The performance of the cascade laser was tested against dopant concentration, energy transfer process, heat generation, output coupling, and pump schemes. The results suggest that the slope efficiencies and thresholds for both transitions increase with increasing Ho3+ or Er3+ concentration with the slope efficiency stabilizing after 1 mol% rare earth doping. The heat generation in the Ho3+-based system is lower compared to the Er 3+-based system at low dopant concentration as a result of the lower rates of multiphonon relaxation. Decreasing the output coupling for the upper (∼3 μm) transition decreases the threshold of the lower transition and the upper transition benefits from decreasing the output coupling for the lower transition for both cascade systems. The highest slope efficiency was achieved under counter-propagating pump conditions. Saturation of the output power occurs at comparatively higher pump power with dilute Er3+ doping compared with heavier doping. Overall, we show that the cascade Ho3+ -doped fluoride laser is the best candidate for high power output because of its higher slope efficiency and lower temperature excursion of the core and no saturation of the output. © 2013 IEEE.