6 resultados para Electronic, Optical and Magnetic Materials
em Aston University Research Archive
Resumo:
In this letter, we directly compare digital back-propagation (DBP) with spectral inversion (SI) both with and without symmetry correction via dispersive chirping, and numerically demonstrate that predispersed SI outperforms traditional SI, and approaches the performance of computationally exhaustive ideal DBP. Furthermore, we propose for the first time a novel practical scheme employing predispersed SI to compensate the bulk of channel nonlinearities, and DBP to accommodate the residual penalties due to varying SI location, with predispersed SI ubiquitously employed along the transmission link with <;0.5-dB penalty. Our results also show that predispersed SI enables partial compensation of cross-phase modulation effects, increasing the transmission reach by ×2.
Resumo:
Fe{HB(CHN)} is observed by variable temperature infrared and magnetic studies to have a spin transition between the low spin S = 0 and high spin S = 2 states at 331 K (58 °C) with thermal hysteresis of ~1.5 K. Changes in the triazole ligand IR absorptions demonstrate that distant non-metal-ligand vibrations are altered upon the change in electronic structure associated with the spin-crossover can be used to monitor the the spin-crossover transition.
Resumo:
The current optical communications network consists of point-to-point optical transmission paths interconnected with relatively low-speed electronic switching and routing devices. As the demand for capacity increases, then higher speed electronic devices will become necessary. It is however hard to realise electronic chip-sets above 10 Gbit/s, and therefore to increase the achievable performance of the network, electro-optic and all-optic switching and routing architectures are being investigated. This thesis aims to provide a detailed experimental analysis of high-speed optical processing within an optical time division multiplexed (OTDM) network node. This includes the functions of demultiplexing, 'drop and insert' multiplexing, data regeneration, and clock recovery. It examines the possibilities of combining these tasks using a single device. Two optical switching technologies are explored. The first is an all-optical device known as 'semiconductor optical amplifier-based nonlinear optical loop mirror' (SOA-NOLM). Switching is achieved by using an intense 'control' pulse to induce a phase shift in a low-intensity signal propagating through an interferometer. Simultaneous demultiplexing, data regeneration and clock recovery are demonstrated for the first time using a single SOA-NOLM. The second device is an electroabsorption (EA) modulator, which until this thesis had been used in a uni-directional configuration to achieve picosecond pulse generation, data encoding, demultiplexing, and 'drop and insert' multiplexing. This thesis presents results on the use of an EA modulator in a novel bi-directional configuration. Two independent channels are demultiplexed from a high-speed OTDM data stream using a single device. Simultaneous demultiplexing with stable, ultra-low jitter clock recovery is demonstrated, and then used in a self-contained 40 Gbit/s 'drop and insert' node. Finally, a 10 GHz source is analysed that exploits the EA modulator bi-directionality to increase the pulse extinction ratio to a level where it could be used in an 80 Gbit/s OTDM network.
Resumo:
Digital back-propagation (DBP) has recently been proposed for the comprehensive compensation of channel nonlinearities in optical communication systems. While DBP is attractive for its flexibility and performance, it poses significant challenges in terms of computational complexity. Alternatively, phase conjugation or spectral inversion has previously been employed to mitigate nonlinear fibre impairments. Though spectral inversion is relatively straightforward to implement in optical or electrical domain, it requires precise positioning and symmetrised link power profile in order to avail the full benefit. In this paper, we directly compare ideal and low-precision single-channel DBP with single-channel spectral-inversion both with and without symmetry correction via dispersive chirping. We demonstrate that for all the dispersion maps studied, spectral inversion approaches the performance of ideal DBP with 40 steps per span and exceeds the performance of electronic dispersion compensation by ~3.5 dB in Q-factor, enabling up to 96% reduction in complexity in terms of required DBP stages, relative to low precision one step per span based DBP. For maps where quasi-phase matching is a significant issue, spectral inversion significantly outperforms ideal DBP by ~3 dB.
Resumo:
The synthesis and detailed characterization of a few samples of the compound RbMn[Fe(CN)]·zHO are described. The composition of the materials significantly depends on the applied preparative conditions. Analysis of spectroscopic results (FTIR, Raman, Fe Mössbauer, XPS) and X-ray powder-diffraction data yielded a further assessment of the difference in structural features in terms of the amount of Fe(CN)6 vacancies and the associated number of water molecules. The characteristic individual magnetic behavior, as well as the metal-to-metal charge-transfer capabilities of the various samples, could be related to significant changes within the structures that appear to be associated with the synthetic method used.
Resumo:
The growth and magnetic properties of epitaxial magnetite Fe3O4 on GaAs(100) have been studied by reflection high-energy electron diffraction, x-ray photoelectron spectroscopy, magneto-optical Kerr effect, and x-ray magnetic circular dichroism. The epitaxial Fe3O4 films were synthesized by in situ post growth annealing of ultrathin epitaxial Fe films at 500K in an oxygen partial pressure of 5×10−5mbar. The XMCD measurements show characteristic contributions from different sites of the ferrimagnetic magnetite unit cell, namely, Fetd3+, Feoh2+, and Feoh3+. The epitaxial relationship was found to be Fe3O4(100)⟨011⟩∕∕GaAs(100)⟨010⟩ with the unit cell of Fe3O4 rotated by 45° to match that of GaAs(100) substrate. The films show a uniaxial magnetic anisotropy in a thickness range of about 2.0–6.0nm with the easy axes along the [011] direction of the GaAs(100) substrate.