Universal duality in a Luttinger liquid coupled to a generic environment

We study a Luttinger liquid (LL) coupled to a generic environment consisting of bosonic modes with arbitrary density-density and current-current interactions. The LL can be either in the conducting phase and perturbed by a weak scatterer or in the insulating phase and perturbed by a weak link. The environment modes can also be scattered by the imperfection in the system with arbitrary transmission and reflection amplitudes. We present a general method of calculating correlation functions under the presence of the environment and prove the duality of exponents describing the scaling of the weak scatterer and of the weak link. This duality holds true for a broad class of models and is sensitive to neither interaction nor environmental modes details, thus it shows up as the universal property. It ensures that the environment cannot generate new stable fixed points of the renormalization group flow. Thus, the LL always flows toward either conducting or insulating phase. Phases are separated by a sharp boundary which is shifted by the influence of the environment. Our results are relevant, for example, for low-energy transport in (i) an interacting quantum wire or a carbon nanotube where the electrons are coupled to the acoustic phonons scattered by the lattice defect; (ii) a mixture of interacting fermionic and bosonic cold atoms where the bosonic modes are scattered due to an abrupt local change of the interaction; (iii) mesoscopic electric circuits.

In situ diagnostics and prognostics of solder fatigue in IGBT modules for electric vehicle drives

This paper proposes an in situ diagnostic and prognostic (D&P) technology to monitor the health condition of insulated gate bipolar transistors (IGBTs) used in EVs with a focus on the IGBTs' solder layer fatigue. IGBTs' thermal impedance and the junction temperature can be used as health indicators for through-life condition monitoring (CM) where the terminal characteristics are measured and the devices' internal temperature-sensitive parameters are employed as temperature sensors to estimate the junction temperature. An auxiliary power supply unit, which can be converted from the battery's 12-V dc supply, provides power to the in situ test circuits and CM data can be stored in the on-board data-logger for further offline analysis. The proposed method is experimentally validated on the developed test circuitry and also compared with finite-element thermoelectrical simulation. The test results from thermal cycling are also compared with acoustic microscope and thermal images. The developed circuitry is proved to be effective to detect solder fatigue while each IGBT in the converter can be examined sequentially during red-light stopping or services. The D&P circuitry can utilize existing on-board hardware and be embedded in the IGBT's gate drive unit.

In situ diagnostics and prognostics of wire bonding faults in IGBT modules for electric vehicle drives

This paper presents a diagnostic and prognostic condition monitoring method for insulated-gate bipolar transistor (IGBT) power modules for use primarily in electric vehicle applications. The wire-bond-related failure, one of the most commonly observed packaging failures, is investigated by analytical and experimental methods using the on-state voltage drop as a failure indicator. A sophisticated test bench is developed to generate and apply the required current/power pulses to the device under test. The proposed method is capable of detecting small changes in the failure indicators of the IGBTs and freewheeling diodes and its effectiveness is validated experimentally. The novelty of the work lies in the accurate online testing capacity for diagnostics and prognostics of the power module with a focus on the wire bonding faults, by injecting external currents into the power unit during the idle time. Test results show that the IGBT may sustain a loss of half the bond wires before the impending fault becomes catastrophic. The measurement circuitry can be embedded in the IGBT drive circuits and the measurements can be performed in situ when the electric vehicle stops in stop-and-go, red light traffic conditions, or during routine servicing.