High-power versatile picosecond pulse generation from mode-locked quantum-dot laser diodes

This paper presents the current status of our research in mode-locked quantum-dot edge-emitting laser diodes, particularly highlighting the recent progress in spectral and temporal versatility of both monolithic and external-cavity laser configurations. Spectral versatility is demonstrated through broadband tunability and novel mode-locking regimes that involve distinct spectral bands, such as dual-wavelength mode-locking, and robust high-power wavelength bistability. Broad tunability of the pulse repetition rate is also demonstrated for an external-cavity mode-locked quantum-dot laser, revealing a nearly constant pulse peak power at different pulse repetition rates. High-energy and low-noise pulse generations are demonstrated for low-pulse repetition rates. These recent advances confirm the potential of quantum-dot lasers as versatile, compact, and low-cost sources of ultrashort pulses. © 2011 IEEE.

Polymerisable octahedral rhenium cluster complexes as precursors for photo/electroluminescent polymers

New polymerisable photoluminescent octahedral rhenium cluster complexes trans-[{Re6Q8}(TBP)4(VB)2] (Q = S or Se; TBP-p-tert-butylpyridine; VB-vinyl benzoate) have been synthesised, characterised and used to construct rhenium cluster-organic polymer hybrid materials. These novel polymer systems are solution-processable and the rhenium clusters retain their photoluminescent properties within the polymer environment. Notably, when the rhenium cluster complexes are incorporated into the matrix of the electroluminescent polymer poly(N-vinylcarbazole), the resultant cluster polymer hybrid combined properties of both components and was used successfully in the construction of a polymer light emitting diode (PLED). These prototype devices are the first PLEDs to incorporate octahedral rhenium clusters and provide the first direct evidence of the electroluminescent properties of rhenium clusters and indeed, to the best of our knowledge, of any member of the family of 24-electron hexanuclear cluster complexes of molybdenum, tungsten or rhenium.

Temperature-dependent internal quantum efficiency of blue high-brightness light-emitting diodes

Internal quantum efficiency (IQE) of a blue high-brightness InGaN/GaN light-emitting diode (LED) was evaluated from the external quantum efficiency measured as a function of current at various temperatures ranged between 13 and 440 K. Processing the data with a novel evaluation procedure based on the ABC-model, we have determined the temperature-dependent IQE of the LED structure and light extraction efficiency of the LED chip. Separate evaluation of these parameters is helpful for further optimization of the heterostructure and chip designs. The data obtained enable making a guess on the temperature dependence of the radiative and Auger recombination coefficients, which may be important for identification of dominant mechanisms responsible for the efficiency droop in III-nitride LEDs. Thermal degradation of the LED performance in terms of the emission efficiency is also considered.