Graphene layers produced from carbon nanotubes by frication

Graphene layers have been produced from multi-walled carbon nanotube (MWCNT) bulk materials by friction when polished on ground-glass, offering a novel and effective method to produce graphene layers, which, more importantly, could be transferred to other substrates by rubbing. Field emission scanning electron microscopy, Raman spectroscopy, atomic force microscopy, transmission electron microscopy and selected area electron diffraction confirmed the formation of graphene layers. They were thought to be peeled away from the MWCNT walls due to friction. The reflection spectra showed that absorption of as-produced graphene layers decreased with wavelength in the range of 250–400 nm, compared to the MWCNT bulk material having strong absorption at 350 nm. Nanoscratch test was used to determine the mechanical properties of graphene films, suggesting the tolerance of as-produced graphene film to flaws introduced by scratch.

Hybrid Fe3O4 /GaAs (100) structure for spintronics

Fe3O4 GaAs hybrid structures have been studied using reflection high-energy electron diffraction (RHEED), x-ray photoelectron spectroscopy (XPS), x-ray magnetic circular dichroism (XMCD), and low-temperature vibrating-sample magnetometry (VSM). The samples were prepared by oxidizing epitaxial Fe thin films in a partial pressure of 5× 10-5 mbar of oxygen at 500 K for 180 s. Clear RHEED patterns were observed, suggesting the epitaxial growth of Fe oxides with a cubic structure. The XPS spectra show that the oxides were Fe3O4 rather than γ- Fe2O3, as there were no shake-up satellites between the two Fe 2p peaks. This was further confirmed by the XMCD measurements, which show ferromagnetic coupling between the Fe cations, with no evidence of intermixing at the interface. The VSM measurements show that the films have a magnetic uniaxial anisotropy and a "quick" saturation property, with the easy axes along the [011] direction. This detailed study offers further insight into the structure, interface, and magnetic properties of this hybrid Fe3O4 GaAs (100) structure as a promising system for spintronic application. © 2005 American Institute of Physics.

Epitaxial growth and magnetic properties of half-metallic Fe3O4 on GaAs(100)

The growth and magnetic properties of epitaxial magnetite Fe3O4 on GaAs(100) have been studied by reflection high-energy electron diffraction, x-ray photoelectron spectroscopy, magneto-optical Kerr effect, and x-ray magnetic circular dichroism. The epitaxial Fe3O4 films were synthesized by in situ post growth annealing of ultrathin epitaxial Fe films at 500K in an oxygen partial pressure of 5×10−5mbar. The XMCD measurements show characteristic contributions from different sites of the ferrimagnetic magnetite unit cell, namely, Fetd3+, Feoh2+, and Feoh3+. The epitaxial relationship was found to be Fe3O4(100)⟨011⟩∕∕GaAs(100)⟨010⟩ with the unit cell of Fe3O4 rotated by 45° to match that of GaAs(100) substrate. The films show a uniaxial magnetic anisotropy in a thickness range of about 2.0–6.0nm with the easy axes along the [011] direction of the GaAs(100) substrate.

Surface roughness reduction and diffraction efficiency optimisation for e-beam written phase masks

We report the control of surface relief grating parameters and roughness for phase masks produced using e-beam lithography (EBL) and reactive ion etching (RIE). The relationships between processing conditions, grating parameters, surface roughness and the diffraction efficiency of the zeroth and the two first order transmitted beams are discussed.

Surface roughness reduction and diffraction efficiency optimisation for e-beam written phase masks

We report the control of surface relief grating parameters and roughness for phase masks produced using e-beam lithography (EBL) and reactive ion etching (RIE). The relationships between processing conditions, grating parameters, surface roughness and the diffraction efficiency of the zeroth and the two first order transmitted beams are discussed.