Effect of spatial inhomogeneity of charge carrier mobility on current-voltage characteristics in organic field-effect transistors

A semi-quantitative model is put forward elucidating the role of spatial inhomogeneity of charge carrier mobility in organic field-effect transistors. The model, based on electrostatic arguments, allows estimating the effective thickness of the conducting channel and its changes in function of source-drain and gate voltages. Local mobility gradients in the direction perpendicular to the insulator/semiconductor interface translate into voltage dependences of the average carrier mobility in the channel, resulting in positive or negative deviations of current-voltage characteristics from their expected shapes. The proposed effect supplements those described in the literature, i.e., density-dependent mobility of charge carriers, short-channel effects, and contribution of contact resistance.

The factors affecting the optimal performance of eddy-current machines

This thesis presents an examination of the factors which influence the performance of eddy-current machines and the way in which they affect optimality of those machines. After a brief introduction to the types of eddy-current machine considered, the applications to which these machines are put are examined. A list of parameters by which to assess their performance is obtained by considering the machine as part of a system. in this way an idea of what constitutes an optimal machine is obtained. The third chapter then identifies the factors which affects the performance and makes a quantitative evaluation of the effect. Here the various alternative configurations and components are compared with regard to their influence on the mechanical, electromagnetic, and thermal performance criteria of the machine. Chapter four contains a brief review of the methods of controlling eddy-current machines by electronic methods using thyristors or transistors as the final control element. Where necessary, the results of previous workers in the field of electrical machines have been extended or adapted to increase the usefulness of this thesis.

Electronic properties of homoepitaxial (111) highly boron-doped diamond films

The use of diamond as a semiconductor for the realization of transistor structures, which can operate at high temperatures (>700 K), is of increasing interest. In terms of bipolar devices, the growth of n-type phosphorus doped diamond is more efficient on the (111) growth plane; p-type boron-doped diamond growth has been most usually grown in the (100) direction and, hence, this study into the electronic properties, at high temperatures, of boron-doped diamond (111) homoepitaxial layers. It is shown that highly doped layers (hole carrier concentrations as high as 2×1020 cm-3) can be produced without promoting the onset of (unwanted) hopping conduction. The persistence of valance-band conduction in these films enables relatively high mobility values to be measured ( ~ 20 cm2/V?s) and, intriguingly, these values are not significantly reduced at high temperatures. The layers also display very low compensation levels, a fact that may explain the high mobility values since compensation is required for hopping conduction. The results are discussed in terms of the potential of these types of layers for use with high temperature compatible diamond transistors.

Online sensorless position estimation for switched reluctance motors using one current sensor

This paper proposes an online sensorless rotor position estimation technique for switched reluctance motors (SRMs) using just one current sensor. It is achieved by first decoupling the excitation current from the bus current. Two phase-shifted pulse width modulation signals are injected into the relevant lower transistors in the asymmetrical half-bridge converter for short intervals during each current fundamental cycle. Analog-to-digital converters are triggered in the pause middles of the dual pulse to separate the bus current for excitation current recognition. Next, the rotor position is estimated from the excitation current, by a current-rise-time method in the current-chopping-control mode in a low-speed operation and a current-gradient method in the voltage-pulse-control mode in a high-speed operation. The proposed scheme requires only a bus current sensor and a minor change to the converter circuit, without a need for individual phase current sensors or additional detection devices, achieving a more compact and cost-effective drive. The performance of the sensorless SRM drive is fully investigated. The simulation and experiments on a 750-W three-phase 12/8-pole SRM are carried out to verify the effectiveness of the proposed scheme.

In situ diagnostics and prognostics of solder fatigue in IGBT modules for electric vehicle drives

This paper proposes an in situ diagnostic and prognostic (D&P) technology to monitor the health condition of insulated gate bipolar transistors (IGBTs) used in EVs with a focus on the IGBTs' solder layer fatigue. IGBTs' thermal impedance and the junction temperature can be used as health indicators for through-life condition monitoring (CM) where the terminal characteristics are measured and the devices' internal temperature-sensitive parameters are employed as temperature sensors to estimate the junction temperature. An auxiliary power supply unit, which can be converted from the battery's 12-V dc supply, provides power to the in situ test circuits and CM data can be stored in the on-board data-logger for further offline analysis. The proposed method is experimentally validated on the developed test circuitry and also compared with finite-element thermoelectrical simulation. The test results from thermal cycling are also compared with acoustic microscope and thermal images. The developed circuitry is proved to be effective to detect solder fatigue while each IGBT in the converter can be examined sequentially during red-light stopping or services. The D&P circuitry can utilize existing on-board hardware and be embedded in the IGBT's gate drive unit.