QoE-aware power management in vehicle-to-grid networks:a matching-theoretic approach

Frequency, time and places of charging and discharging have critical impact on the Quality of Experience (QoE) of using Electric Vehicles (EVs). EV charging and discharging scheduling schemes should consider both the QoE of using EV and the load capacity of the power grid. In this paper, we design a traveling plan-aware scheduling scheme for EV charging in driving pattern and a cooperative EV charging and discharging scheme in parking pattern to improve the QoE of using EV and enhance the reliability of the power grid. For traveling planaware scheduling, the assignment of EVs to Charging Stations (CSs) is modeled as a many-to-one matching game and the Stable Matching Algorithm (SMA) is proposed. For cooperative EV charging and discharging in parking pattern, the electricity exchange between charging EVs and discharging EVs in the same parking lot is formulated as a many-to-many matching model with ties, and we develop the Pareto Optimal Matching Algorithm (POMA). Simulation results indicates that the SMA can significantly improve the average system utility for EV charging in driving pattern, and the POMA can increase the amount of electricity offloaded from the grid which is helpful to enhance the reliability of the power grid.

Epitaxial growth and magnetic properties of half-metallic Fe3O4 on GaAs(100)

The growth and magnetic properties of epitaxial magnetite Fe3O4 on GaAs(100) have been studied by reflection high-energy electron diffraction, x-ray photoelectron spectroscopy, magneto-optical Kerr effect, and x-ray magnetic circular dichroism. The epitaxial Fe3O4 films were synthesized by in situ post growth annealing of ultrathin epitaxial Fe films at 500K in an oxygen partial pressure of 5×10−5mbar. The XMCD measurements show characteristic contributions from different sites of the ferrimagnetic magnetite unit cell, namely, Fetd3+, Feoh2+, and Feoh3+. The epitaxial relationship was found to be Fe3O4(100)⟨011⟩∕∕GaAs(100)⟨010⟩ with the unit cell of Fe3O4 rotated by 45° to match that of GaAs(100) substrate. The films show a uniaxial magnetic anisotropy in a thickness range of about 2.0–6.0nm with the easy axes along the [011] direction of the GaAs(100) substrate.