High-power widely tunable Raman fiber laser

Tunable Raman fiber lasers have attracted great interest owing to their high efficiency and reliability important for applications, such as optical fiber communications and sensing, spectroscopy, and instrument testing. Their tuning range is defined by the Raman gain bandwidth amounting to about 40 nm in telecom spectral range (∼1550 nm) for conventional silica single mode fibers (SMF). To increase the range, highly nonlinear fibers which broaden pump spectrum may be incorporated in the cavity of Raman fiber lasers, see e.g. [1]. Another approach is to involve Rayleigh scattering forming random distributed feedback in a relatively long fiber resulting in prominent flattening of the tuning curve [2]. In this paper we report on combination of these two techniques in tunable Raman fiber lasers thus providing great improvement of their output characteristics. © 2013 IEEE.

Spectral width optimization in random DFB fiber laser

Lasers with random distributed feedback (DFB) owing to Rayleigh scattering in optical fibers [1] have attracted a great interest: a number of papers demonstrating new laser schemes and applications have been proposed [2-7] recently. Moreover, the generation output power and, more generally, generation power distribution could be described both analytically and numerically within simple balance models [8-9]. However, spectral properties of random DFB fiber lasers are not studied except some attempt made in [10]. Generation spectrum of random DFB fiber laser is quite broad (more than 1 nm), and physical mechanisms of its formation and broadening are still unclear. There is no any practical solution up to date to minimize the generation spectrum width. Here we experimentally show the way to minimize the generation spectral width. © 2013 IEEE.

Optical Nyquist pulse generation in mode-locked fibre laser

We numerically show the feasibility of Nyquist optical pulse generation in a mode-locked fibre laser with an in-cavity flat-top spectral filter. The proposed scheme offers the possibility to generate high-quality sinc-shaped pulses with tunable bandwidth.

Multi-threaded parallel numerical modelling of femtosecond pulse propagation in laser machining

Femtosecond laser microfabrication has emerged over the last decade as a 3D flexible technology in photonics. Numerical simulations provide an important insight into spatial and temporal beam and pulse shaping during the course of extremely intricate nonlinear propagation (see e.g. [1,2]). Electromagnetics of such propagation is typically described in the form of the generalized Non-Linear Schrdinger Equation (NLSE) coupled with Drude model for plasma [3]. In this paper we consider a multi-threaded parallel numerical solution for a specific model which describes femtosecond laser pulse propagation in transparent media [4, 5]. However our approach can be extended to similar models. The numerical code is implemented in NVIDIA Graphics Processing Unit (GPU) which provides an effitient hardware platform for multi-threded computing. We compare the performance of the described below parallel code implementated for GPU using CUDA programming interface [3] with a serial CPU version used in our previous papers [4,5]. © 2011 IEEE.

Higher-order soliton generation in hybrid mode-locked thulium-doped fiber ring laser

A thulium-doped all-fiber laser passively mode-locked by the co-action of nonlinear polarization evolution and single-walled carbon nanotubes operating at 1860-1980 nm wavelength band is demonstrated. Pumped with the single-mode laser diode at 1.55 μm laser generates near 500-fs soliton pulses at repetition rate ranging from 6.3 to 72.5 MHz in single-pulse operation regime. Having 3-m long cavity average output power reached 300 mW, giving the peak power of 4.88 kW and the pulse energy of 2.93 nJ with slope efficiency higher than 30%. At a 21.6-m long ring cavity average output power of 117 mW is obtained, corresponding to the pulse energy up to 10.87 nJ and a pulse peak power of 21.7 kW, leading to the higher-order soliton generation.

Self-mode-locked vertical-external-cavity surface-emitting laser

Ultrashort laser pulses from vertical-external-cavity surface-emitting lasers (VECSELs) have been receiving much attention in the semiconductor laser community since the first demonstration of sub-ps-pulsed devices more than a decade ago. Originally relying on semiconductor saturable-absorber mirrors for pulse formation, mode-locked operation has not only become accessible by using a variety of saturable absorbers, but also by using a saturable-absorber-free technique referred to as self-mode-locking (SML). Here, we highlight achievements in the field of SML-VECSELs with quantum-well and quantum-dot gain chips, and study the influence of a few VECSEL parameters on the assumed nonlinear lensing behavior in the system. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Soliton molecules generation in DWCNT mode-locked thulium-doped fibre laser

No abstract available.

On two-wavelength Raman fibre laser based on spectral broadening

Raman fibre lasers and converters using the stimulated Raman scattering (SRS) in optical fibre waveguide are attractive for many applications ranging from telecommunications to bio-medical applications [1]. Multiple-wavelength Raman laser sources emitting at two and more wavelengths have been proposed to increase amplification spectrum of Raman fibre amplifiers and to improve noise characteristics [2,3]. Typically, a single fibre waveguide is used in such devices while multi-wavelength generation is achieved by employing corresponding number of fibre Bragg grating (FBG) pairs forming laser resonator. This approach, being rather practical, however, might not provide a good level of cross coherence between radiation generated at different wavelengths due to difference in FBGs and random phase fluctuations between the two wavelengths. In this work we examine a scheme of two-wavelength Raman fibre laser with high-Q cavity based on spectral intracavity broadening [3]. We demonstrate feasibility of such configuration and perform numerical analysis clarifying laser operation using an amplitude propagation equation model that accounts for all key physical effects in nonlinear fibre: dispersion, Kerr nonlinearity, Raman gain, depletion of the Raman pump wave and fibre losses. The key idea behind this scheme is to take advantage of the spectral broadening that occurs in optical fibre at high powers. The effect of spectral broadening leads to effective decrease of the FBGs reflectivity and enables generation of two waves in one-stage Raman laser. The output spectrum in the considered high-Q cavity scheme corresponds to two peaks with 0.2 - 1 nm distance between them. © 2011 IEEE.

Passive mode locking in erbium-doped fibre laser by carbon nanotubes

Passively mode locked fibre lasers have a variety of applications ranging from telecommunication to medical photonics. Carbon nanotubes (CNTs) have attracted recently a great deal of attention as a promising solution for saturable absorber elements required for laser mode locking (see e.g. [1-3] and references therein). CNTs can be used as a saturable absorber in passively mode locked fibre laser directly [1,2] or as a CNTs polymer composites [3]. An attractive feature of CNT-based solutions in fibre lasers is a possibility to maintain the compactness, robustness of all-fibre format and low cost through using all standard telecom compatible components. The two important technical challenges in such type of lasers are: (i) to achieve stable polarization properties of the generated radiation without using complex control elements, and, (ii) to avoid low frequency instabilities of the mode-locked pulse train. In this paper we report results of the experiments on mode-locked soliton fibre laser using the following standard components: 1m of highly doped erbium fibre (Liekki Er80-8/125) serves as the gain medium with nominal absorption of 80 dB/m at 1530 nm; a 976 nm laser diode providing up to 310mW power is used to pump the laser via a 980/1550 wavelength division multiplexing; an isolator is employed to ensure single direction oscillation; SMF-28 is used to create necessary amount of anomalous dispersion to form soliton pulse making the total cavity length around 7.83 m; the CNT-polyvinyl alcohol polymer saturable absorber sandwiched in the FC/PC connector is used as a mode-locker device (see [3] for details). © 2011 IEEE.

Quantum-dot based ultrafast photoconductive antennae for efficient THz radiation

Here we overview our work on quantum dot based THz photoconductive antennae, capable of being pumped at very high optical intensities of higher than 1W optical mean power, i.e. about 50 times higher than the conventional LT-GaAs based antennae. Apart from high thermal tolerance, defect-free GaAs crystal layers in an InAs:GaAs quantum dot structure allow high carrier mobility and ultra-short photo carrier lifetimes simultaneously. Thus, they combine the advantages and lacking the disadvantages of GaAs and LT-GaAs, which are the most popular materials so far, and thus can be used for both CW and pulsed THz generation. By changing quantum dot size, composition, density of dots and number of quantum dot layers, the optoelectronic properties of the overall structure can be set over a reasonable range-compact semiconductor pump lasers that operate at wavelengths in the region of 1.0 μm to 1.3 μm can be used. InAs:GaAs quantum dot-based antennae samples show no saturation in pulsed THz generation for all average pump powers up to 1W focused into 30 μm spot. Generated THz power is super-linearly proportional to laser pump power. The generated THz spectrum depends on antenna design and can cover from 150 GHz up to 1.5 THz.

A note on the propagation of quantized vortex rings through a quantum turbulence tangle:energy transport or energy dissipation?

We investigate quantum vortex ring dynamics at scales smaller than the inter-vortex spacing in quantum turbulence. Through geometrical arguments and high-resolution numerical simulations, we examine the validity of simple estimates for the mean free path and the structure of vortex rings post-reconnection. We find that a large proportion of vortex rings remain coherent objects where approximately 75% of their energy is preserved. This leads us to consider the effectiveness of energy transport in turbulent tangles. Moreover, we show that in low density tangles, appropriate for the ultra-quantum regime, ring emission cannot be ruled out as an important mechanism for energy dissipation. However at higher vortex line densities, typically associated with the quasi-classical regime, loop emission is expected to make a negligible contribution to energy dissipation, even allowing for the fact that our work shows rings can survive multiple reconnection events. Hence the Kelvin wave cascade seems the most plausible mechanism leading to energy dissipation

Quantum dot materials for terahertz generation applications

Compact and tunable semiconductor terahertz sources providing direct electrical control, efficient operation at room temperatures and device integration opportunities are of great interest at the present time. One of the most well-established techniques for terahertz generation utilises photoconductive antennas driven by ultrafast pulsed or dual wavelength continuous wave laser systems, though some limitations, such as confined optical wavelength pumping range and thermal breakdown, still exist. The use of quantum dot-based semiconductor materials, having unique carrier dynamics and material properties, can help to overcome limitations and enable efficient optical-to-terahertz signal conversion at room temperatures. Here we discuss the construction of novel and versatile terahertz transceiver systems based on quantum dot semiconductor devices. Configurable, energy-dependent optical and electronic characteristics of quantum-dot-based semiconductors are described, and the resonant response to optical pump wavelength is revealed. Terahertz signal generation and detection at energies that resonantly excite only the implanted quantum dots opens the potential for using compact quantum dot-based semiconductor lasers as pump sources. Proof-of-concept experiments are demonstrated here that show quantum dot-based samples to have higher optical pump damage thresholds and reduced carrier lifetime with increasing pump power.

Slow passage through thresholds in quantum dot lasers

A turn on of a quantum dot (QD) semiconductor laser simultaneously operating at the ground state (GS) and excited state (ES) is investigated both experimentally and theoretically. We find experimentally that the slow passage through the two successive laser thresholds may lead to significant delays in the GS and ES turn ons. The difference between the turn-on times is measured as a function of the pump rate of change and reveals no clear power law. This has motivated a detailed analysis of rate equations appropriate for two-state lasing QD lasers. We find that the effective time of the GS turn on follows an -1/2 power law provided that the rate of change is not too small. The effective time of the ES transition follows an -1 power law, but its first order correction in ln is numerically significant. The two turn ons result from different physical mechanisms. The delay of the GS transition strongly depends on the slow growth of the dot population, whereas the ES transition only depends on the time needed to leave a repellent steady state.