Mode-locked semiconductor lasers with optical injection

We perform characterization of the pulse shape and noise properties of quantum dot passively mode-locked lasers (PMLLs). We propose a novel method to determine the RF linewidth and timing jitter, applicable to high repetition rate PMLLs, through the dependence of modal linewidth on the mode number. Complex electric field measurements show asymmetric pulses with parabolic phase close to threshold, with the appearance of waveform instabilities at higher currents. We demonstrate that the waveform instabilities can be overcome through optical injection-locking to the continues wave (CW) master laser, leading to time-bandwidth product (TBP) improvement, spectral narrowing, and spectral tunability. We discuss the benefits of single- and dual-tone master sources and demonstrate that dual-tone optical injection can additionally improve the noise properties of the slave laser with RF linewidth reduction below instrument limits (1 kHz) and integrated timing jitter values below 300 fs. Dual-tone injection allowed slave laser repetition rate control over a 25 MHz range with reduction of all modal optical linewidths to the master source linewidth, demonstrating phase-locking of all slave modes and coherence improvement.

Design of Raman-based nonlinear loop mirror for all-optical 2R regeneration of differential phase-shift-keying transmission

We present a concept for all-optical regeneration of signals modulated in phase-sensitive modulation formats, which is based on a new design of Raman amplified nonlinear optical loop mirror (RA-NOLM). We demonstrate simultaneous amplitude-shape regeneration and phase-noise reduction in high-speed differential phase-shift-keying transmission systems by use of the RA-NOLM combined with spectral filtering. © 2006 IEEE.

Microstructures made in optical fiber with femtosecond laser

Different types of microstructures including microchannels and microslots were made in optical fibers using femtosecond laser inscription and chemical etching. Integrated with UV-inscribed fiber Bragg gratings, these microstructures have miniature, robustness and high sensitivity features and have been used to implement novel devices for various sensing applications. The fiber microchannels were used to detect the refractive index change of liquid presenting sensitivities up to 7.4 nm/refractive index unit (RIU) and 166.7 dB/RIU based on wavelength and power detection, respectively. A microslot-in-fiber based liquid core waveguide as a refractometer has been proposed and the device was used to measure refractive index, and a sensitivity up to 945 nm/RIU (10-6/pm) was obtained. By filling epoxy in the microslot and subsequent UV light curing, a hybrid waveguide grating structure with polymer core and glass cladding was fabricated. The obtained device was highly thermal responsive, demonstrating a linear coefficient of 211 pm/°C.

Stabilization of a passively mode-locked laser by continuous wave optical injection

We investigate numerically and experimentally the properties of a passively mode locked quantum dot semiconductor laser under the influence of cw optical injection. We demonstrate that the waveform instability at high pumping for these devices can be overcome when one mode of the device is locked to the injected master laser and additionally show spectral narrowing and tunability. Experimental and numerical analyses demonstrate that the stable locking boundaries are similar to these obtained for optical injection in CW lasers. © 2010 American Institute of Physics.

Novel optical chemsonsor based on etched D-fiber bragg gratings

A novel optical chemsensor concept based on the cladding etched Bragg gratings in D-fiber is demonstrated. Two etched devices have been used to measure the concentrations of sugar solution, giving sensitivity as high as 0.02nm/%.

Tunable master-oscillator power-amplifier based on chirped quantum-dot structures

A broadly tunable master-oscillator power-amplifier (MOPA) picosecond optical pulse source is demonstrated, consisting of an external cavity passively mode-locked laser diode with a tapered semiconductor amplifier. By employing chirped quantum-dot structures on both the oscillator's gain chip and amplifier, a wide tunability range between 1187 and 1283 nm is achieved. Under mode-locked operation, the highest output peak power of 4.39 W is achieved from the MOPA, corresponding to a peak power spectral density of 31.4 dBm/nm. © 1989-2012 IEEE.

Quantum dot materials for ultrafast optoelectronics

The report discussed on a new high performance quantum dot based laser sources which demonstrated a record-high peak power and subpicosecond optical pulses in 1-1.3μm wavelength range.

THz emission from quantum dot-based THz antennas pumped by a tunable quantum-dot laser diode

The THz optoelectronics field is now maturing and semiconductor-based THz antenna devices are becoming more widely implemented as analytical tools in spectroscopy and imaging. Photoconductive (PC) THz switches/antennas are driven optically typically using either an ultrashort-pulse laser or an optical signal composed of two simultaneous longitudinal wavelengths which are beat together in the PC material at a THz difference frequency. This allows the generation of (photo)carrier pairs which are then captured over ultrashort timescales usually by defects and trapping sites throughout the active material lattice. Defect-implanted PC materials with relatively high bandgap energy are typically used and many parameters such as carrier mobility and PC gain are greatly compromised. This paper demonstrates the implementation of low bandgap energy InAs quantum dots (QDs) embedded in standard crystalline GaAs as both the PC medium and the ultrafast capture mechanism in a PC THz antenna. This semiconductor structure is grown using standard MBE methods and allows the device to be optically driven efficiently at wavelengths up to ~1.3 µm, in this case by a single tunable dual-mode QD diode laser.

Tunable master-oscillator power-amplifier using all chirped quantum-dot structures

A tunable master-oscillator power-amplifier (MOPA) picosecond optical pulse source using all chirped quantum dot (QD) structures is demonstrated (60nm tunability). Under fundamental mode-locked operation, the highest peak power of 4.39 W is achieved.

Broadly tunable quantum-dot based ultra-short pulse laser system with different diffraction grating orders

A broadly tunable quantum-dot based ultra-short pulse master oscillator power amplifier with different diffraction grating orders as an external-cavity resonance feedback is studied. A broader tuning range, narrower optical spectra as well as higher peak power spectal density (maximun of 1.37 W/nm) from the second-order diffraction beam are achieved compared to those from the first-order diffraction beam in spite of slightly broader pulse duration from the secondorder diffraction. © The Institution of Engineering and Technology 2013.

Broadly tunable high-power InAs/GaAs quantum-dot external cavity diode lasers

A record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser with a tuning range of 202 nm (1122 nm-1324 nm) is demonstrated. A maximum output power of 480 mW and a side-mode suppression ratio greater than 45 dB are achieved in the central part of the tuning range. We exploit a number of strategies for enhancing the tuning range of external cavity quantum-dot lasers. Different waveguide designs, laser configurations and operation conditions (pump current and temperature) are investigated for optimization of output power and tunability. (C) 2010 Optical Society of America

A compact free space quantum key distribution system capable of daylight operation

A free space quantum key distribution system has been demonstrated. Consideration has been given to factors such as field of view and spectral width, to cut down the deleterious effect from background light levels. Suitable optical sources such as lasers and RCLEDs have been investigated as well as optimal wavelength choices, always with a view to building a compact and robust system. The implementation of background reduction measures resulted in a system capable of operating in daylight conditions. An autonomous system was left running and generating shared key material continuously for over 7 days. © 2009 Published by Elsevier B.V..

Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals? difference frequency ~1 THz.(C) 2012 American Institute of Physics.