178 resultados para lasers and laser optics


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Direct measurements of the absorbed energy in femtosecond laser inscription in a range of materials is performed. Key absorption parameters are characterized by fitting numerical modelling to measurements.

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A femtosecond laser was used to modify a part of the cladding of a standard LPG bend sensor. The device produced wavelength shifts depending upon the direction of bend, thus making a shape sensor. © 2005 Optical Society of America.

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We demonstrated a room temperature, tuneable, external cavity Quantum Cascade Laser for the use in compact spectroscopic gas sensing system. Wavelength tuning of 85 nm between 3190 nm and 3275 nm was achieved at room temperature.

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Here we present a compact tunable all-room-temperature frequency-doubling scheme, using a periodically poled potassium titanyl phosphate (PPKTP) waveguide and a QD-ECDL. A broad wavelength tunability of the second harmonic generated light (SHG) in the spectral region between 567.7 and 629.1 nm was achieved, with maximum conversion efficiencies in range of 0.34%-7.9%. The maximum output power for the SHG light was 4.11 mW at 591.5 nm, achieved for 52 mW of launched pump power at 1183 nm, resulting in a conversion efficiency of 7.9%.

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We demonstrate a CW tunable compact all-room-temperature laser system in the visible spectral region from 567.7 nm to 629.1 nm, by frequency doubling in a periodically-poled KTP waveguide crystal using a tunable quantum-dot external-cavity diode laser.

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Here we present a compact all-room-temperature frequency-doubling scheme generating orange light, using a PPKTP waveguide and a quantum-dot external cavity diode laser (QD-ECDL). The maximum output power for the second harmonic generated light (SHG) was 1.43 mW at 613 nm, achieved for 70 mW of launched pump power at 1226 nm. This represents an important step towards a compact and wall-plug-efficient coherent orange light source, operating at room temperature.

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Wavelength bistability between 1245nm and 1295nm is demonstrated in a multi-section quantum-dot laser, controlled via the reverse bias on the saturable absorber. Continuous-wave or mode-locked regimes are achieved (output power up to 25mW and 17mW). © OSA/CLEO 2011.

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The THz optoelectronics field is now maturing and semiconductor-based THz antenna devices are becoming more widely implemented as analytical tools in spectroscopy and imaging. Photoconductive (PC) THz switches/antennas are driven optically typically using either an ultrashort-pulse laser or an optical signal composed of two simultaneous longitudinal wavelengths which are beat together in the PC material at a THz difference frequency. This allows the generation of (photo)carrier pairs which are then captured over ultrashort timescales usually by defects and trapping sites throughout the active material lattice. Defect-implanted PC materials with relatively high bandgap energy are typically used and many parameters such as carrier mobility and PC gain are greatly compromised. This paper demonstrates the implementation of low bandgap energy InAs quantum dots (QDs) embedded in standard crystalline GaAs as both the PC medium and the ultrafast capture mechanism in a PC THz antenna. This semiconductor structure is grown using standard MBE methods and allows the device to be optically driven efficiently at wavelengths up to ~1.3 µm, in this case by a single tunable dual-mode QD diode laser.

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This paper reports on buried waveguides fabricated in lithium niobate (LN) by the method of direct femtosecond (fs) laser inscription. 5% MgO doped LiNbO3 was chosen as the host material because of its high quality and damage threshold, as well as relatively low cost. Direct fs inscription by astigmatically shaped beam in crystals usually produces multiple 'smooth' tracks (with reduced refractive index), which encircle the light guiding 'core', thus creating a depressed cladding WG. A high-repetition rate fs laser system was used for inscription at a depth of approximately 500 μm. Using numerical modelling, it was demonstrated that the properties of fs-written WGs can be controlled by the WG geometry. Buried, depressed-cladding WGs in LN host with circular cross-section were also demonstrated. Combining control over the WG dispersion with quasi-phase matching will allow various ultralow-pump-power, highly-efficient, nonlinear light-guiding devices - all in an integrated optics format.

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Self-seeded, gain-switched operation of an InGaN multi-quantum-well diode laser is reported for the first time. Narrow-line, wavelength-tunable, picosecond pulses have been generated from a standard, uncoated diode laser in an external cavity.

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A simple technique based on superimposed cavities structure for direct real-time assessment of a DFB fiber laser mode condition during operation is demonstrated and used to provide a cavity mode conditioning feedback mechanism to optimize output performance. Significant improvements to the output performance and robustness are achieved over the entire pump power range without ambient isolation.

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We describe the technique allowing for generation of low-noise wider frequency combs and pulses of shorter duration in quantum-dot mode-locked lasers. We compare experimentally noise stabilization techniques in semiconductor modelocked lasers. We discuss the benefits of electrical modulation of the laser absorber voltage (hybrid mode-locking), combination of hybrid mode-locking with optical injection seeding from the narrow linewidth continues wave master source and optical injection seeding of two coherent sidebands separated by the laser repetition rate. © 2014 SPIE.

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The distribution of the secret key is the weakest link of many data encryption systems. Quantum key distribution (QKD) schemes provide attractive solutions [1], however their implementation remains challenging and their range and bit-rate are limited. Moreover, practical QKD systems, employ real-life components and are, therefore, vulnerable to diverse attack schemes [2]. Ultra-Long fiber lasers (UFLs) have been drawing much attention recently because of their fundamentally different properties compared to conventional lasers as well as their unique applications [3]. Here, we demonstrate a 100Bps, practically secure key distribution, over a 500km link, employing Raman gain UFL. Fig. 1(a) depicts a schematic of the UFL system. Each user has an identical set of two wavelength selective mirrors centered at l0 and l 1. In order to exchange a key-bit, each user independently choose one of these mirrors and introduces it as a laser reflector at their end. If both users choose identical mirrors, a clear signal develops and the bits in these cases are discarded. However if they choose complementary mirrors, (1, 0 or 0, 1 states), the UFL remains below lasing threshold and no signal evolves. In these cases, an eavesdropper can only detect noise and is unable to determine the mirror choice of the users, where the choice of mirrors represent a single key bit (e.g. Alice's choice of mirror is the key-bit). These bits are kept and added to the key. The absence of signal in the secure states faxilitates fast measurements to distinguish between the non-secure and the secure states and to determine the key-bit in the later case, Sequentially reapeating the single bit exchange protocol generate the entire keys of any desirable length. © 2013 IEEE.

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Recently, the concept of a random distributed feedback (DFB) lasing in optical fibers has been demonstrated [1], A number of different random DFB fiber lasers has been demonstrated so far including tunable, multiwalength, cascaded generation, generation in different spectral bands etc [2-7]. All systems are based on standard low-loss germanium doped silica core fibres having relatively low Rayleigh scattering coefficient. Thus, the typical length of random DFB fiber lasers is in the range from several kilometres to tens of kilometres to accumulate enough random feedback. Here we demonstrate for the first time to our knowledge the random DFB fiber laser based on a nitrogen doped silica core (N-doped) fiber. The fiber has several times higher Rayleigh scattering coefficient compared to standard telecommunication fibres. Thus, the generation is achieved in 500 meters long fiber only. © 2013 IEEE.

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Optical solitons are important in the modern photonics. Passively mode locked erbium doped fiber lasers provide a neat platform to study soliton dynamics. Soliton interaction dynamics is important for various applications and has quite different manifestations, including e.g. such as bound state solitons [1], soliton rains [2]. Soliton interactions have been observed with different mode locking approaches such as figure-of-eight [3] and nonlinear polarization rotation [4]. Carbon nanotubes (CNT) have recently been widely applied as an efficient saturable absorber for passively mode locked fiber lasers. We have recently studied the polarization dynamics in a CNT mode locked vector soliton erbium doped fiber laser [5]. So far, the polarization dynamics of bound state solitons have yet to be investigated. In this report, we present a wide range of polarization dynamics of bound state solitons generated in a CNT mode locked erbium doped fiber laser. The fiber laser consists of ∼ 2 m highly doped erbium fiber (Liekki Er80-8/125) as the gain medium, an optical isolator to ensure unidirectional oscillation anda 980 nm laser diode is used to pump the gain through the 1550/980 nm wavelength division multiplexer. A fused 10:90 coupler is used to couple 10 % of the light out of the laser cavity and two in-line polarization controllers (NewPort) are used to control the birefringence of the cavity and polarization of the pump light respectively. The total cavity length is ∼ 7.8 m indicating a 25.7 MHz fundamental repetition rate. © 2013 IEEE.