Optical trapping with superfocused high-M2 laser diode beam

Many applications of high-power laser diodes demand tight focusing. This is often not possible due to the multimode nature of semiconductor laser radiation possessing beam propagation parameter M2 values in double-digits. We propose a method of 'interference' superfocusing of high-M2 diode laser beams with a technique developed for the generation of Bessel beams based on the employment of an axicon fabricated on the tip of a 100 μm diameter optical fiber with highprecision direct laser writing. Using axicons with apex angle 140º and rounded tip area as small as 10 μm diameter, we demonstrate 2-4 μm diameter focused laser 'needle' beams with approximately 20 μm propagation length generated from multimode diode laser with beam propagation parameter M2=18 and emission wavelength of 960 nm. This is a few-fold reduction compared to the minimal focal spot size of 11 μm that could be achieved if focused by an 'ideal' lens of unity numerical aperture. The same technique using a 160º axicon allowed us to demonstrate few-μm-wide laser 'needle' beams with nearly 100 μm propagation length with which to demonstrate optical trapping of 5-6 μm rat blood red cells in a water-heparin solution. Our results indicate the good potential of superfocused diode laser beams for applications relating to optical trapping and manipulation of microscopic objects including living biological objects with aspirations towards subsequent novel lab-on-chip configurations.

Quantum-dot saturable absorber and Kerr lens mode-locked Yb:KGW laser with >300 kW of peak power

Dual action of quantum-dot saturable absorber and Kerr lens mode locking of a diode-pumped Yb:KGW laser was demonstrated. The laser delivered 105 fs pulses with 2.5 W of average power and >300 kW of peak power.

Quantum-dot saturable absorber and Kerr-lens mode-locked Yb:KGW laser with >450 kW of peak power

The hybrid action of quantum-dot saturable absorber and Kerr-lens mode locking in a diode-pumped Yb:KGW laser was demonstrated. Using a quantum-dot saturable absorber with a 0.7% (0.5%) modulation depth, the mode-locked laser delivered 90 fs (93 fs) pulses with 3.2 W (2.9 W) of average power at the repetition rate of 77 MHz, corresponding to 462 kW (406 kW) of peak power and 41 nJ (38 nJ) of pulse energy. To the best of our knowledge, this represents the highest average and peak powers generated to date from quantum-dot saturable absorber-based mode-locked lasers.

Flat-top supercontinuum and tunable femtosecond fiber laser sources at 1.9-2.5 μm

We report the high-energy flat-top supercontinuum covering the mid-infrared wavelength range of 1.9-2.5 μm as well as electronically tunable femtosecond pulses between 1.98-2.22 μm directly from the thulium-doped fiber laser amplifier. Comparison of experimental results with numerical simulations confirms that both sources employ the same nonlinear optical mechanism - Raman soliton frequency shift occurring inside the Tm-fiber amplifier. To illustrate that, we investigate two versions of the compact diode-pumped SESAM mode-locked femtosecond thulium-doped all-silica-fiber-based laser system providing either broadband supercontinuum or tunable Raman soliton output, depending on the parameters of the system. The first system operates in the Raman soliton regime providing femtosecond pulses tunable between 1.98-2.22 μm. Wide and continuous spectral tunability over 240 nm was realized by changing only the amplifier pump diode current. The second system generates high-energy supercontinuum with the superior spectral flatness of better than 1 dB covering the wavelength range of 1.9-2.5 μm, with the total output energy as high as 0.284 μJ, the average power of 2.1 W at 7.5 MHz repetition rate. We simulate the amplifier operation in the Raman soliton self-frequency shift regime and discuss the role of induced Raman scattering in supercontinuum formation inside the fiber amplifier. We compare this system with a more traditional 1.85-2.53 μm supercontinuum source in the external highly-nonlinear commercial chalcogenide fiber using the Raman soliton MOPA as an excitation source. The reported systems1 can be readily applied to a number of industrial applications in the mid-IR, including sensing, stand-off detection, medical surgery and fine material processing.

Investigation of bonded hydrogen defects in nanocrystalline diamond films grown with nitrogen/methane/hydrogen plasma at high power conditions

In this work, we investigate the influence of some growth parameters such as high microwave power ranging from 3.0 to 4.0 kW and N2 additive on the incorporation of bonded hydrogen defects in nanocrystalline diamond (NCD) films grown through a small amount of pure N2 addition into conventional 4% CH4/H2 plasma using a 5 kW microwave plasma CVD system. Incorporation form and content of hydrogen point defects in the NCD films produced with pure N2 addition was analyzed by employing Fourier-transform infrared (FTIR) spectroscopy for the first time. A large amount of hydrogen related defects was detected in all the produced NCD films with N2 additive ranging from 29 to 87 µm thick with grain size from 47 nm to 31 nm. Furthermore, a specific new H related sharp absorption peak appears in all the NCD films grown with pure N2/CH4/H2 plasma at high powers and becomes stronger at powers higher than 3.0 kW and is even stronger than the 2920 cm−1 peak, which is commonly found in CVD diamond films. Based on these experimental findings, the role of high power and pure nitrogen addition on the growth of NCD films including hydrogen defect formation is analyzed and discussed.

Waveguide inscription in YAG:Cr4+ crystals by femtosecond laser irradiation

We have observed a positive change or refractive index and formation of waveguides in YAG:Cr4+ crystals, exposed to a high-intensity femtosecond laser beam. The technique is potentially suitable for fabrication of waveguide lasers in crystal materials.

All-fiber polarization locked vector soliton laser using carbon nanotubes

We report an all-fiber mode-locked erbium-doped fiber laser (EDFL) employing carbon nanotube (CNT) polymer composite film. By using only standard telecom grade components, without any complex polarization control elements in the laser cavity, we have demonstrated polarization locked vector solitons generation with duration of ~583fs , average power of ~3 mW (pulse energy of 118pJ ) at the repetition rate of ~25.7 MHz.

Efficient 2.87 μm fiber laser passively switched using a semiconductor saturable absorber mirror

A passively switched Ho3+, Pr3+ codoped fluoride fiber laser using a semiconductor saturable absorber mirror (SESAM) is demonstrated. Q-switching and partial mode-locking were observed with the output power produced at a slope efficiency of 24% with respect to the absorbed pump power. The partially mode-locked 2.87 µm pulses operated at a repetition rate of 27.1 MHz with an average power of 132 mW, pulse energy of 4.9 nJ, and pulse width of 24 ps.

Electronic and thermal lensing in diode end-pumped Yb:YAG laser rods and discs

The lensing effects in diode end-pumped Yb:YAG laser rods and discs are studied. Two mechanisms of refractive-index changes are taken into account, thermal and electronic (due to the difference between the excited- and ground-state Yb polarisabilities), as well as pump-induced deformation of the laser crystal. Under pulsed pumping, the electronic lensing effect prevails over the thermal one in both rods and discs. In rods pumped by a highly focused cw beam, the dioptric power of the electronic lens exceeds that of the thermal lens, whereas in discs steady-state lensing is predominantly due to the thermal mechanism. © 2009 Kvantovaya Elektronika and Turpion Ltd.

Narrow-band generation and mode correlations in a short Raman fibre laser

We design a Raman fibre laser with a short cavity providing narrow-band generation. The laser is based on a commercial single-mode fibre (980-HP) span of 12 m length. The laser generates up to 11 W of intracavity power. Even at high generation power, the laser spectrum is narrow (less than 200 pm) - several times narrower than for conventional Raman fibre lasers based on longer fibres. The intensity dynamics reveals indications of mode correlations. © 2014 Astro Ltd.

A high-power-factor, three-phase isolated AC-DC converter using high-frequency current injection

A single-stage, three-phase AC-to-DC converter topology is proposed for high-frequency power supply applications. The principal features of the circuit include continuous current operation of the three AC input inductors, inherent shaping of the input currents, resulting in high power factor, a transformer isolated output, and only two active devices are required, both soft-switched. Resonant conversion techniques are used, and a high power factor is achieved by injecting high-frequency currents into the three-phase rectifier, producing a high frequency modulation of the rectifier input voltages. The current injection principle is explained and the system operation is confirmed by a combination of simulation and experimental results.

Semiconductor saturable absorber mirror passively Q-switched 2.97 μm fluoride fiber laser

A diode-cladding-pumped mid-infrared passively Q-switched Ho3+-doped fluoride fiber laser using a reverse designed broad band semiconductor saturable mirror (SESAM) was demonstrated. Nonlinear reflectivity of the SESAM was measured using an in-house Yb3+-doped mode-locked fiber laser at 1062 nm. Stable pulse train was produced at a slope efficient of 12.1% with respect to the launched pump power. Maximum pulse energy of 6.65 μ J with a pulse width of 1.68 μ s and signal-to-noise ratio (SNR) of ∼50 dB was achieved at a repetition rate of 47.6 kHz and center wavelength of 2.971 μ m. To the best of our knowledge, this is the first 3 μ m region SESAM-based Q-switched fiber laser with the highest average power and pulse energy, as well as the longest wavelength from mid-infrared passively Q-switched fluoride fiber lasers. © 2014 Astro Ltd.

Sub-100 fs mode-locked erbium-doped fiber laser using a 45°-tilted fiber grating

We demonstrate generation of sub-100 fs pulses at 1.5 μm in a mode-locked erbium-doped fiber laser using a 45°-tilted fiber grating element. The laser features a genuine all-fiber configuration. Based on the unique polarization properties of the 45°-tilted fiber grating, we managed to produce sub-100 fs laser pulses through proper dispersion management. To the best of our knowledge, this is the shortest pulse generated from modelocked lasers with fiber gratings. The output pulse has an average power of 8 mW, with a repetition rate of 47.8 MHz and pulse energy of 1.68 nJ. The performance of laser also matches well the theoretical simulations. © 2013 Optical Society of America.

Semiconductor saturable absorber mirror passively Q-switched 2.97 μm fluoride fiber laser

A diode-cladding-pumped mid-infrared passively Q-switched Ho 3+-doped fluoride fiber laser using a reverse designed broad band semiconductor saturable mirror (SESAM) was demonstrated. Nonlinear reflectivity of the SESAM was measured using an in-house Yb3+-doped mode-locked fiber laser at 1062 nm. Stable pulse train was produced at a slope efficient of 12.1% with respect to the launched pump power. Maximum pulse energy of 6.65 μJ with a pulse width of 1.68 μs and signal to noise ratio (SNR) of ~50 dB was achieved at a repetition rate of 47.6 kHz and center wavelength of 2.971 μm. To the best of our knowledge, this is the first 3 μm region SESAM based Q-switched fiber laser with the highest average power and pulse energy, as well as the longest wavelength from mid-infrared passively Q-switched fluoride fiber lasers. © 2014 SPIE.

Dynamical interplay between ground and excited states in quantum dot laser

Full text: Semiconductor quantum dot lasers are attractive for multipletechnological applications in biophotonics. Simultaneous two-state lasing ofground state (GS) and excited state (ES) electrons and holes in QD lasers ispossible under a certain parameter range. It has already been investigated in steady-stateoperations and in dynamical regimes and is currently a subject of the intesiveresearch. It has been shown that the relaxation frequency in the two-state lasingregime is not a function of the total intensity [1], as could be traditionallyexpected.In this work we study damping relaxation oscillations in QD lasersimultaneously operating at two transitions, and find that under variouspumping conditions, the frequency of oscillations may decrease, increase orstay without change in time as shown in Fig1.The studied QD laser structure wasgrown on a GaAs substrate by molecular-beam epitaxy. The active region includedfive layers of self-assembled InAs QDs separated with a GaAs spacer from a5.3nm thick covering layer of InGaAs and processed into 4mm-wide mesa stripe devices. The 2.5mm long lasers withhigh-and antireflection coatings on the rear and front facets lasesimultaneously at the GS (around 1265nm) and ES (around 1190nm) in the wholerange of pumping. Pulsed electrical pumping obtained from a high power (up to2A current) pulse source was used to achieve high output power operation. We simultaneously detect the total output and merely ES output using aBragg filter transmitting the short-wavelength and reflecting the long-wavelengthradiation. Typical QD does not demonstrate relaxation oscillations frequencybecause of the strong damping [2]. It is confirmed for the low (I<0.68A) andhigh (I>1.2 A) range of the pump currents in our experiments. The situationis different for a short range of the medium currents (0.68Alaser turns on andstarts to operate simultaneously. The frequency of oscillations may either significantlydecrease (from 2 GHz to 1 GHz) or sufficiently increase (from 2 GHz to 4 GHz)within 20 ns of the pulse duration. The oscilations appear simultaneously at GSand ES and are always damped, but can be either inphase or antiphase dependingon the pump current and temperature conditions. We address the excitation of the relaxation oscillations to non-instantaneousturn on of the pumping source which activates with 5ns rise time and discussthe swap of the oscillation's frequency in time to spectral shifts caused by thermaleffects. [1] M.Abusaa, J. Danckaert, E. A. Viktorov, and T. Erneux, Phys. Rev. A 87, 063827(2013). [2] T.Erneux, E. A. Viktorov, and P. Mandel, Phys. Rev. A 76,023819 (2007). 1 © 2014 IEEE.