PROSPECTS AND ISSUES FOR FUEL CELLS WITH FREIGHT RAIL TRANSPORTATION

Recent changes in the cost and availability of natural gas (NG) as compared to diesel have sparked interest at all levels of the commercial shipping sector. In particular, Class 1 heavy-duty rail has been researching NG as a supplement to diesel combustion. This study investigates the relative economic and emissions advantage of making use of the energy efficiencies if combustion is circumvented altogether by use of fuel cell (FC) technologies applied to NG. FC technology for the transport sector has primarily been developed for the private automobile. However, FC use in the automobile sector faces considerable economic and logistical barriers such as cost, range, durability, and refueling infrastructure. The heavy-duty freight sector may be a more reasonable setting to introduce FC technology to the transportation market. The industry has shown interest in adopting NG as a potential fuel by already investing in NG infrastructure and locomotives. The two most promising FC technologies are proton exchange membrane fuel cells (PEMFCs) and solid oxide fuel cells (SOFCs). SOFCs are more efficient and capable of accepting any kind of fuel, which makes them particularly attractive. The rail industry can benefit from the adoption of FC technology through reduced costs and emissions, as well as limiting dependence on diesel, which accounts for a large portion of operation expenses for Class 1 railroads. This report provides an economic feasibility analysis comparing the use of PEMFCs and SOFCs in heavy freight rail transport applications. The scope is to provide insight into which technologies could be pursued by the industry and to prioritize technologies that need further development. Initial results do not show economic potential for NG and fuel cells in locomotion, but some minimal potential for reduced emissions is seen. Various technology configurations and market scenarios analyzed could provide savings if the price of LNG is decreased and the price of diesel increases. The most beneficial areas of needed research include technology development for the variable output of SOFCs, and hot start-up optimization.

Development and improvement of warm-mix asphalt technology

Traditionally, asphalt mixtures were produced at high temperatures (between 150°C to 180°C) and therefore often referred to as Hot Mix Asphalt (HMA). Recently, a new technology named Warm Mix Asphalt (WMA) was developed in Europe that allows HMA to be produced at a lower temperature. Over years of research efforts, a few WMA technologies were introduced including the foaming method using Aspha-min® and Advera® WMA; organic additives such as Sasobit® and Asphaltan B®; and chemical packages such as Evotherm® and Cecabase RT®. Benefits were found when lower temperatures were used to produce asphalt mixtures, especially when it comes to environmental and energy savings. Even though WMA has shown promising results in energy savings and emission reduction, however, only limited studies and laboratory tests have been conducted to date. The objectives of this project are to 1) develop a mix design framework for WMA by evaluating its mechanical properties; 2) evaluate performance of WMA containing high percentages of recycled asphalt material; and 3) evaluate the moisture sensitivity in WMA. The test results show that most of the WMA has higher fatigue life and TSR which indicated WMA has better fatigue cracking and moisture damage resistant; however, the rutting potential of most of the WMA tested were higher than the control HMA. A recommended WMA mix design framework was developed as well. The WMA design framework was presented in this study to provide contractors, and government agencies successfully design WMA. Mixtures containing high RAP and RAS were studied as well and the overall results show that WMA technology allows the mixture containing high RAP content and RAS to be produced at lower temperature (up to 35°C lower) without significantly affect the performance of asphalt mixture in terms of rutting, fatigue and moisture susceptibility. Lastly, the study also found that by introducing the hydrated lime in the WMA, all mixtures modified by the hydrated lime passed the minimum requirement of 0.80. This indicated that, the moisture susceptibility of the WMA can be improved by adding the hydrated lime.

Development of room temperature operating single electron transistor using FIB etching and deposition technology

The single-electron transistor (SET) is one of the best candidates for future nano electronic circuits because of its ultralow power consumption, small size and unique functionality. SET devices operate on the principle of Coulomb blockade, which is more prominent at dimensions of a few nano meters. Typically, the SET device consists of two capacitively coupled ultra-small tunnel junctions with a nano island between them. In order to observe the Coulomb blockade effects in a SET device the charging energy of the device has to be greater that the thermal energy. This condition limits the operation of most of the existing SET devices to cryogenic temperatures. Room temperature operation of SET devices requires sub-10nm nano-islands due to the inverse dependence of charging energy on the radius of the conducting nano-island. Fabrication of sub-10nm structures using lithography processes is still a technological challenge. In the present investigation, Focused Ion Beam based etch and deposition technology is used to fabricate single electron transistors devices operating at room temperature. The SET device incorporates an array of tungsten nano-islands with an average diameter of 8nm. The fabricated devices are characterized at room temperature and clear Coulomb blockade and Coulomb oscillations are observed. An improvement in the resolution limitation of the FIB etching process is demonstrated by optimizing the thickness of the active layer. SET devices with structural and topological variation are developed to explore their impact on the behavior of the device. The threshold voltage of the device was minimized to ~500mV by minimizing the source-drain gap of the device to 17nm. Vertical source and drain terminals are fabricated to realize single-dot based SET device. A unique process flow is developed to fabricate Si dot based SET devices for better gate controllability in the device characteristic. The device vi parameters of the fabricated devices are extracted by using a conductance model. Finally, characteristic of these devices are validated with the simulated data from theoretical modeling.