Measuring the elastic modulus of polymers using the atomic force microscope

Testing a new method of nanoindentation using the atomic force microscope (AFM) was the purpose of this research. Nanoindentation is a useful technique to study the properties of materials on the sub-micron scale. The AFM has been used as a nanoindenter previously; however several parameters needed to obtain accurate results, including tip radius and cantilever sensitivity, can be difficult to determine. To solve this problem, a new method to determine the elastic modulus of a material using the atomic force microscope (AFM) has been proposed by Tang et al. This method models the cantilever and the sample as two springs in a series. The ratio of the cantilever spring constant (k) to diameter of the tip (2a) is treated in the model as one parameter (α=k/2a). The value of a, along with the cantilever sensitivity, are determined on two reference samples with known mechanical properties and then used to find the elastic modulus of an unknown sample. To determine the reliability and accuracy of this technique, it was tested on several polymers. Traditional depth-sensing nanoindentation was preformed for comparison. The elastic modulus values from the AFM were shown to be statistically similar to the nanoindenter results for three of the five samples tested.

IN-SITU TEM PLASMA CHIP NANOFABRICATION AND CHARACTERIZATION

A silicon-based microcell was fabricated with the potential for use in in-situ transmission electron microscopy (TEM) of materials under plasma processing. The microcell consisted of 50 nm-thick film of silicon nitride observation window with 60μm distance between two electrodes. E-beam scattering Mont Carlo simulation showed that the silicon nitride thin film would have very low scattering effect on TEM primary electron beam accelerated at 200 keV. Only 4.7% of primary electrons were scattered by silicon nitride thin film and the Ar gas (60 μm thick at 1 atm pressure) filling the space between silicon nitride films. Theoretical calculation also showed low absorption of high-energy e-beam electrons. Because the plasma cell needs to survive the high vacuum TEM chamber while holding 1 atm internal pressure, a finite element analysis was performed to find the maximum stress the low-stress silicon nitride thin film experienced under pressure. Considering the maximum burst stress of low-stress silicon nitride thin film, the simulation results showed that the 50 nm silicon nitride thin film can be used in TEM under 1 atm pressure as the observation window. Ex-situ plasma generation experiment demonstrated that air plasma can be ignited at DC voltage of 570. A Scanning electron microscopy (SEM) analysis showed that etching and deposition occurred during the plasma process and larger dendrites formed on the positive electrode.