Metal-oxide film and photonic structures for integrated device applications

The application of photonic crystal technology on metal-oxide film is a very promising field for future optical telecommunication systems. Band gap and polarization effects in lithium niobate (LiNbO3) photonic crystals and bismuth-substituted iron garnets (BiYIG) photonic crystals are investigated in this work reported here. The design and fabrication process are similar for these two materials while the applications are different, involving Bragg filtering in lithium niobate and polarization rotation in nonreciprocal iron garnets. The research of photonic structures in LiNbO3 is of high interest for integrated device application due to its remarkable electro-optical characteristics. This work investigated the photonic band gap in high quality LiNbO3 single crystalline thin film by ion implantation to realize high efficiency narrow bandwidth filters. LiNbO3 thin film detachment by bonding is also demonstrated for optical device integration. One-dimensional Bragg BiYIG waveguides in gyrotropic system are found to have multiple stopbands and evince enhancement of polarization rotation efficiency. Previous photon trapping theory cannot explain the phenomena because of the presence of linear birefringence. This work is aimed at investigating the mechanism with the support of experiments. The results we obtained show that selective suppression of Bloch states in gyrotropic bandgaps is the key mechanism for the observed phenomena. Finally, the research of ferroelectric single crystal PMN-PT with ultra high piezoelectric coefficient as a biosensor is also reported. This work presents an investigation and results on higher sensitivity effects than conventional materials such as quartz and lithium niobate.

IN-SITU TEM PLASMA CHIP NANOFABRICATION AND CHARACTERIZATION

A silicon-based microcell was fabricated with the potential for use in in-situ transmission electron microscopy (TEM) of materials under plasma processing. The microcell consisted of 50 nm-thick film of silicon nitride observation window with 60μm distance between two electrodes. E-beam scattering Mont Carlo simulation showed that the silicon nitride thin film would have very low scattering effect on TEM primary electron beam accelerated at 200 keV. Only 4.7% of primary electrons were scattered by silicon nitride thin film and the Ar gas (60 μm thick at 1 atm pressure) filling the space between silicon nitride films. Theoretical calculation also showed low absorption of high-energy e-beam electrons. Because the plasma cell needs to survive the high vacuum TEM chamber while holding 1 atm internal pressure, a finite element analysis was performed to find the maximum stress the low-stress silicon nitride thin film experienced under pressure. Considering the maximum burst stress of low-stress silicon nitride thin film, the simulation results showed that the 50 nm silicon nitride thin film can be used in TEM under 1 atm pressure as the observation window. Ex-situ plasma generation experiment demonstrated that air plasma can be ignited at DC voltage of 570. A Scanning electron microscopy (SEM) analysis showed that etching and deposition occurred during the plasma process and larger dendrites formed on the positive electrode.