Development of room temperature operating single electron transistor using FIB etching and deposition technology

The single-electron transistor (SET) is one of the best candidates for future nano electronic circuits because of its ultralow power consumption, small size and unique functionality. SET devices operate on the principle of Coulomb blockade, which is more prominent at dimensions of a few nano meters. Typically, the SET device consists of two capacitively coupled ultra-small tunnel junctions with a nano island between them. In order to observe the Coulomb blockade effects in a SET device the charging energy of the device has to be greater that the thermal energy. This condition limits the operation of most of the existing SET devices to cryogenic temperatures. Room temperature operation of SET devices requires sub-10nm nano-islands due to the inverse dependence of charging energy on the radius of the conducting nano-island. Fabrication of sub-10nm structures using lithography processes is still a technological challenge. In the present investigation, Focused Ion Beam based etch and deposition technology is used to fabricate single electron transistors devices operating at room temperature. The SET device incorporates an array of tungsten nano-islands with an average diameter of 8nm. The fabricated devices are characterized at room temperature and clear Coulomb blockade and Coulomb oscillations are observed. An improvement in the resolution limitation of the FIB etching process is demonstrated by optimizing the thickness of the active layer. SET devices with structural and topological variation are developed to explore their impact on the behavior of the device. The threshold voltage of the device was minimized to ~500mV by minimizing the source-drain gap of the device to 17nm. Vertical source and drain terminals are fabricated to realize single-dot based SET device. A unique process flow is developed to fabricate Si dot based SET devices for better gate controllability in the device characteristic. The device vi parameters of the fabricated devices are extracted by using a conductance model. Finally, characteristic of these devices are validated with the simulated data from theoretical modeling.

Technology, Transportation, and Scale in the Koyokuk Placer Mining District 1890s - 1930s

The Koyukuk Mining District was one of several northern, turn of the century, gold rush regions. Miners focused their efforts in this region on the Middle Fork of the Koyukuk River and on several of its tributaries. Mining in the Koyukuk began in the 1880s and the first rush occurred in 1898. Continued mining throughout the early decades of the 1900s has resulted in an historic mining landscape consisting of structures, equipment, mining shafts, waste rock, trash scatters, and prospect pits. Modern work continues in the region alongside these historic resources. An archaeological survey was completed in 2012 as part of an Abandoned Mine Lands survey undergone with the Bureau of Land Management, Michigan Technological University, and the University of Alaska Anchorage. This thesis examines the discrepancy between the size of mining operations and their respective successes in the region while also providing an historical background on the region and reports on the historical resources present.