Microwave-assisted wet chemical (MAWC) synthesis of lithium iron phosphate

LiFePO4 is a Co-free battery material. Its advantages of low cost, non-toxic and flat discharge plateau show promising for vehicle propulsion applications. A major problem associated with this material is its low electrical conductivity. Use of nanosized LiFePO4 coated with carbon is considered a solution because the nanosized particles have much shorter path for L+ ions to travel from the LiFePO4 crystal lattice to electrolytes. As other nano material powders, however, nano LiFePO4 could have processing and health issues. In order to achieve high electrical conductivity while maintaining a satisfactory manufacturability, the particles should possess both of the nano- and the microcharacteristics correspondingly. These two contradictory requirements could only be fulfilled if the LiFePO4 powders have a hierarchical structure: micron-sized parent particles assembled by nanosized crystallites with appropriate electrolyte communication channels. This study addressed the issue by study of the formation and development mechanisms of the LiFePO4 crystallites and their microstructures. Microwaveassisted wet chemical (MAWC) synthesis approach was employed in order to facilitate the evolvement of the nanostructures. The results reveal that the LiFePO4 crystallites were directly nucleated from amorphous precursors by competition against other low temperature phases, Li3PO4 and Fe3(PO4)2•8H2O. Growth of the crystalline LiFePO4 particles went through oriented attachment first, followed by revised Ostwald ripening and then recrystallization. While recrystallization played the role in growth of well crystallized particles, oriented attachment and revised Ostwald ripening were responsible for formation of the straight edge and plate-like shaped LiFePO4 particles comprised of nanoscale substructure. Oriented attachment and revised Ostwald ripening seemed to be also responsible for clustering the plate-like LiFePO4 particles into a high-level aggregated structure. The finding from this study indicates a hope for obtaining the hierarchical structure of LiFePO4 particles that could exhibit the both micro- and nano- scale characteristics. Future study is proposed to further advance the understanding of the structural development mechanisms, so that they can be manipulated for new LiFePO4 structures ideal for battery application.

Integration of room temperature single electron transistor with CMOS subsystem

The single electron transistor (SET) is a charge-based device that may complement the dominant metal-oxide-semiconductor field effect transistor (MOSFET) technology. As the cost of scaling MOSFET to smaller dimensions are rising and the the basic functionality of MOSFET is encountering numerous challenges at dimensions smaller than 10nm, the SET has shown the potential to become the next generation device which operates based on the tunneling of electrons. Since the electron transfer mechanism of a SET device is based on the non-dissipative electron tunneling effect, the power consumption of a SET device is extremely low, estimated to be on the order of 10^-18J. The objectives of this research are to demonstrate technologies that would enable the mass produce of SET devices that are operational at room temperature and to integrate these devices on top of an active complementary-MOSFET (CMOS) substrate. To achieve these goals, two fabrication techniques are considered in this work. The Focus Ion Beam (FIB) technique is used to fabricate the islands and the tunnel junctions of the SET device. A Ultra-Violet (UV) light based Nano-Imprint Lithography (NIL) call Step-and-Flash- Imprint Lithography (SFIL) is used to fabricate the interconnections of the SET devices. Combining these two techniques, a full array of SET devices are fabricated on a planar substrate. Test and characterization of the SET devices has shown consistent Coulomb blockade effect, an important single electron characteristic. To realize a room temperature operational SET device that function as a logic device to work along CMOS, it is important to know the device behavior at different temperatures. Based on the theory developed for a single island SET device, a thermal analysis is carried out on the multi-island SET device and the observation of changes in Coulomb blockade effect is presented. The results show that the multi-island SET device operation highly depends on temperature. The important parameters that determine the SET operation is the effective capacitance Ceff and tunneling resistance Rt . These two parameters lead to the tunneling rate of an electron in the SET device, Γ. To obtain an accurate model for SET operation, the effects of the deviation in dimensions, the trap states in the insulation, and the background charge effect have to be taken into consideration. The theoretical and experimental evidence for these non-ideal effects are presented in this work.