3CAM - A NOVEL TERNARY CONTENT ADDRESSABLE MEMORY USING THREE-VALUED LOGIC

Content Addressable Memory (CAM) is a special type of Complementary Metal-Oxide-Semiconductor (CMOS) storage element that allows for a parallel search operation on a memory stack in addition to the read and write operations yielded by a conventional SRAM storage array. In practice, it is often desirable to be able to store a “don’t care” state for faster searching operation. However, commercially available CAM chips are forced to accomplish this functionality by having to include two binary memory storage elements per CAM cell,which is a waste of precious area and power resources. This research presents a novel CAM circuit that achieves the “don’t care” functionality with a single ternary memory storage element. Using the recent development of multiple-voltage-threshold (MVT) CMOS transistors, the functionality of the proposed circuit is validated and characteristics for performance, power consumption, noise immunity, and silicon area are presented. This workpresents the following contributions to the field of CAM and ternary-valued logic:• We present a novel Simple Ternary Inverter (STI) transistor geometry scheme for achieving ternary-valued functionality in existing SOI-CMOS 0.18µm processes.• We present a novel Ternary Content Addressable Memory based on Three-Valued Logic (3CAM) as a single-storage-element CAM cell with “don’t care” functionality.• We explore the application of macro partitioning schemes to our proposed 3CAM array to observe the benefits and tradeoffs of architecture design in the context of power, delay, and area.

Hydration of the Sulfuric Acid−Methylamine Complex and Implications for Aerosol Formation

The binary H2SO4−H2O nucleation is one of the most important pathways by which aerosols form in the atmosphere, and the presence of ternary species like amines increases aerosol formation rates. In this study, we focus on the hydration of a ternary system of sulfuric acid (H2SO4), methylamine (NH2CH3), and up to six waters to evaluate its implications for aerosol formation. By combining molecular dynamics (MD) sampling with high-level ab initio calculations, we determine the thermodynamics of forming H2SO4(NH2CH3)(H2O)n, where n = 0−6. Because it is a strong acid−base system, H2SO4−NH2CH3 quickly forms a tightly bound HSO4−−NH3CH3+ complex that condenses water more readily than H2SO4 alone. The electronic binding energy of H2SO4−NH2CH3 is −21.8 kcal mol−1 compared with −16.8 kcal mol−1 for H2SO4−NH3 and −12.8 kcal mol−1 for H2SO4−H2O. Adding one to two water molecules to the H2SO4−NH2CH3 complex is more favorable than adding to H2SO4 alone, yet there is no systematic difference for n ≥ 3. However, the average number of water molecules around H2SO4−NH2CH3 is consistently higher than that of H2SO4, and it is fairly independent of temperature and relative humidity.

Hydration of the Sulfuric Acid-Methylamine Complex and Implications for Aerosol Formation

The binary H2SO4-H2O nucleation is one of the most important pathways by which aerosols form in the atmosphere, and the presence of ternary species like amines increases aerosol formation rates. In this study, we focus on the hydration of a ternary system of sulfuric acid (H2SO4), methylamine (NH2CH3), and up to six waters to evaluate its implications for aerosol formation. By combining molecular dynamics (MD) sampling with high-level ab initio calculations, we determine the thermodynamics of forming H2SO4(NH2CH3)(H2O)n, where n = 0-6. Because it is a strong acid-base system, H2SO4-NH2CH3 quickly forms a tightly bound HSO4(-)-NH3CH3(+) complex that condenses water more readily than H2SO4 alone. The electronic binding energy of H2SO4-NH2CH3 is -21.8 kcal mol(-1) compared with -16.8 kcal mol(-1) for H2SO4-NH3 and -12.8 kcal mol(-1) for H2SO4-H2O. Adding one to two water molecules to the H2SO4-NH2CH3 complex is more favorable than adding to H2SO4 alone, yet there is no systematic difference for n ≥ 3. However, the average number of water molecules around H2SO4-NH2CH3 is consistently higher than that of H2SO4, and it is fairly independent of temperature and relative humidity.