Risk Judgment in Obsessive-Compulsive Disorder: Testing a Dual-Systems Account

Dual-systems theorists posit distinct modes of reasoning. The intuition system reasons automatically and its processes are unavailable to conscious introspection. The deliberation system reasons effortfully while its processes recruit working memory. The current paper extends the application of such theories to the study of Obsessive-Compulsive Disorder (OCD). Patients with OCD often retain insight into their irrationality, implying dissociable systems of thought: intuition produces obsessions and fears that deliberation observes and attempts (vainly) to inhibit. To test the notion that dual-systems theory can adequately describe OCD, we obtained speeded and unspeeded risk judgments from OCD patients and non-anxious controls in order to quantify the differential effects of intuitive and deliberative reasoning. As predicted, patients deemed negative events to be more likely than controls. Patients also took more time in producing judgments than controls. Furthermore, when forced to respond quickly patients' judgments were more affected than controls'. Although patients did attenuate judgments when given additional time, their estimates never reached the levels of controls'. We infer from these data that patients have genuine difficulty inhibiting their intuitive cognitive system. Our dual-systems perspective is compatible with current theories of the disorder. Similar behavioral tests may prove helpful in better understanding related anxiety disorders. (C) 2013 Elsevier Ltd. All rights reserved.

3CAM - A NOVEL TERNARY CONTENT ADDRESSABLE MEMORY USING THREE-VALUED LOGIC

Content Addressable Memory (CAM) is a special type of Complementary Metal-Oxide-Semiconductor (CMOS) storage element that allows for a parallel search operation on a memory stack in addition to the read and write operations yielded by a conventional SRAM storage array. In practice, it is often desirable to be able to store a “don’t care” state for faster searching operation. However, commercially available CAM chips are forced to accomplish this functionality by having to include two binary memory storage elements per CAM cell,which is a waste of precious area and power resources. This research presents a novel CAM circuit that achieves the “don’t care” functionality with a single ternary memory storage element. Using the recent development of multiple-voltage-threshold (MVT) CMOS transistors, the functionality of the proposed circuit is validated and characteristics for performance, power consumption, noise immunity, and silicon area are presented. This workpresents the following contributions to the field of CAM and ternary-valued logic:• We present a novel Simple Ternary Inverter (STI) transistor geometry scheme for achieving ternary-valued functionality in existing SOI-CMOS 0.18µm processes.• We present a novel Ternary Content Addressable Memory based on Three-Valued Logic (3CAM) as a single-storage-element CAM cell with “don’t care” functionality.• We explore the application of macro partitioning schemes to our proposed 3CAM array to observe the benefits and tradeoffs of architecture design in the context of power, delay, and area.