Carrier und Regulatoren des Tartrat- und C 4-Dicarboxylatstoffwechsels von Escherichia coli

In E. coli dient L-Tartrat als Elektronenakzeptor während des anaeroben Wachstums und wird schließlich zu Succinat umgesetzt. Der sekundäre Carrier TtdT (YgjE) von E. coli ist ein Antiporter, der die Aufnahme von L-Tartrat im elektroneutralen Austausch gegen intrazelluläres Succinat katalysiert. TtdT besitzt eine hohe Substratspezifität und katalysiert den Transport von L-Tartrat und Succinat, nicht aber von meso- und D-Tartrat. Das Gen ttdT (ygjE) bildet mit den Genen ttdA und ttdB, welche für die L-Tartratdehydratase kodieren, ein Operon. Das benachbarte Gen ttdR (ygiP) kodiert für TtdR (YgiP), einen Tartrat-spezifischen Regulator vom LysR-Typ. TtdR reguliert die L-Tartratfermentation direkt durch Induktion des ttdABT-Operons und durch Autoregulation. TtdR stellt damit den Tartrat-spezifischen Regulator dar, der auf die Expression des ttdR ttdABT-Genclusters spezialisiert ist. Dagegen reguliert DcuSR, das Zweikomponentensystem für C4-Dicarboxylate, die L-Tartratfermentation indirekt durch die Regulation der Gene für die Fumaratatmung. YfaV und YeaV sind weitere potentielle Tartrattransporter. YfaV katalysiert vermutlich den Transport von C4-Dicarboxylaten, einschließlich Tartrat, unter aeroben und anaeroben Bedingungen. YeaV wird nur in Anwesenheit von L- und meso-Tartrat und unter aeroben Bedingungen gebildet. Die yeaUVWX-Gene unterliegen der trankriptionellen Regulation durch YeaT, dessen Gen yeaT vor yeaU liegt. YeaT ist wie TtdR ein Tartrat-spezifischer Regulator und besitzt eine signifikante Ähnlichkeit zu TtdR.

Electronic energy transfer processes and charge carrier transport in pi-conjugated polymers

Conjugated polymers have attracted tremendous academical and industrial research interest over the past decades due to the appealing advantages that organic / polymeric materials offer for electronic applications and devices such as organic light emitting diodes (OLED), organic field effect transistors (OFET), organic solar cells (OSC), photodiodes and plastic lasers. The optimization of organic materials for applications in optoelectronic devices requires detailed knowledge of their photophysical properties, for instance energy levels of excited singlet and triplet states, excited state decay mechanisms and charge carrier mobilities. In the present work a variety of different conjugated (co)polymers, mainly polyspirobifluorene- and polyfluorene-type materials, was investigated using time-resolved photoluminescence spectroscopy in the picosecond to second time domain to study their elementary photophysical properties and to get a deeper insight into structure-property relationships. The experiments cover fluorescence spectroscopy using Streak Camera techniques as well as time-delayed gated detection techniques for the investigation of delayed fluorescence and phosphorescence. All measurements were performed on the solid state, i.e. thin polymer films and on diluted solutions. Starting from the elementary photophysical properties of conjugated polymers the experiments were extended to studies of singlet and triplet energy transfer processes in polymer blends, polymer-triplet emitter blends and copolymers. The phenomenon of photonenergy upconversion was investigated in blue light-emitting polymer matrices doped with metallated porphyrin derivatives supposing an bimolecular annihilation upconversion mechanism which could be experimentally verified on a series of copolymers. This mechanism allows for more efficient photonenergy upconversion than previously reported for polyfluorene derivatives. In addition to the above described spectroscopical experiments, amplified spontaneous emission (ASE) in thin film polymer waveguides was studied employing a fully-arylated poly(indenofluorene) as the gain medium. It was found that the material exhibits a very low threshold value for amplification of blue light combined with an excellent oxidative stability, which makes it interesting as active material for organic solid state lasers. Apart from spectroscopical experiments, transient photocurrent measurements on conjugated polymers were performed as well to elucidate the charge carrier mobility in the solid state, which is an important material parameter for device applications. A modified time-of-flight (TOF) technique using a charge carrier generation layer allowed to study hole transport in a series of spirobifluorene copolymers to unravel the structure-mobility relationship by comparison with the homopolymer. Not only the charge carrier mobility could be determined for the series of polymers but also field- and temperature-dependent measurements analyzed in the framework of the Gaussian disorder model showed that results coincide very well with the predictions of the model. Thus, the validity of the disorder concept for charge carrier transport in amorphous glassy materials could be verified for the investigated series of copolymers.

Der Carrier DcuB als zweiter Sensor des Zweikomponentensystems DcuSR in Escherichia coli

Escherichia coli kann C4-Dicarboxylate und andere Carbonsäuren als Substrate für den aeroben und anaeroben Stoffwechsel nutzen. Die Anwesenheit von C4-Dicarboxylaten im Außenmedium wird über das Zweikomponentensystem DcuSR, bestehend aus der membranständigen Sensorkinase DcuS und dem cytoplasmatischen Responseregulator DcuR, erkannt. Die Bindung von C4-Dicarboxylaten an die periplasmatische Domäne von DcuS führt zu einer Induktion der Zielgene. Hierzu zählen die Gene für den anaeroben Fumarat/Succinat-Antiporter DcuB (dcuB), die anaerobe Fumarase (fumB) und die Fumaratreduktase (frdABCD). Unter aeroben Bedingungen stimuliert DcuSR die Expression des dctA Gens, das für den aeroben C4-Dicarboxylat-Carrier DctA kodiert. Für den Carrier DcuB konnte eine regulatorische Funktion bei der Expression der DcuSR-regulierten Gene gezeigt werden. Die Inaktivierung des dcuB Gens führte bereits ohne Fumarat zu einer maximalen Expression einer dcuB´-´lacZ Reportergenfusion und anderer DcuSR-abhängiger Gene. Diese Stimulierung erfolgte nur in einem dcuS-positiven Hintergrund. DcuB unterscheidet sich damit von den alternativen Carriern DcuA und DcuC, die diesen Effekt nicht zeigten. Mithilfe ungerichteter Mutagenese wurden DcuB-Punktmutanten hergestellt (Thr394Ile und Asp398Asn), die eine Geninduktion verursachten, aber eine intakte Transportfunktion besaßen. Dies zeigt, dass der regulatorische Effekt von DcuB unabhängig von dessen Transportfunktion ist. Durch gerichtete Mutagenese wurde die Funktion einer Punktmutation (Thr394) näher charakterisiert. Es werden zwei Modelle zur Membrantopologie von DcuB und der Lage der Punktmutationen im Protein vorgestellt. Da DcuB seine regulatorische Funktion über eine Interaktion mit DcuS vermitteln könnte, wurden mögliche Wechselwirkungen zwischen DcuB und DcuS als auch DcuR mithilfe von Two-Hybrid-Systemen untersucht. Für biochemische Untersuchungen von DcuB wurde außerdem die Expression des Proteins in vivo und in vitro versucht. Unter aeroben Bedingungen beeinflusst der C4-Dicarboxylat-Carrier DctA die Expression der DcuSR-abhängigen Gene. Eine Mutation des dctA Gens bewirkte eine stärkere Expression einer dctA´-´lacZ Reportergenfusion im Vergleich zum Wildtyp. Diese Expression nahm in einem dcuS-negativen Hintergrund ab, die Succinat-abhängige Induktion blieb jedoch erhalten. Unter anaeroben Bedingungen kann das dctA Gen auch durch Inaktivierung von DcuB induziert werden. Es wird ein Modell vorgestellt, das die Beteiligung beider Carrier an der DcuSR-abhängigen Regulation erklärt.

Electronic transport in the heavy fermion superconductors UPd 2 Al 3 and UNi 2 Al 3

This work addresses the electronical properties of the superconductors UPd2Al3 and UNi2Al3 on the basis of thin film experiments. These isotructural compounds are ideal candiates to study the interplay of magnetism and superconductivity due to the differences of their magnetically ordered states, as well as the experimental evidence for a magnetic pairing mechanism in UPd2Al3. Epitaxial thin film samples of UPd2Al3 and UNi2Al3 were prepared using UHV Molecular Beam Epitaxy (MBE). For UPd2Al3, the change of the growth direction from the intrinsic (001) to epitaxial (100) was predicted and sucessfully demonstrated using LaAlO3 substrates cut in (110) direction. With optimized deposition process parameters for UPd2Al3 (100) on LaAlO3 (110) superconducting samples with critical temperatures up to Tc = 1.75K were obtained. UPd2Al3-AlOx-Ag mesa junctions with superconducting base electrode were prepared and shown to be in the tunneling regime. However, no signatures of a superconducting density of states were observed in the tunneling spectra. The resistive superconducting transition was probed for a possible dependence on the current direction. In contrast to UNi2Al3, the existence of such feature was excluded in UPd2Al3 (100) thin films. The second focus of this work is the dependence of the resisitive transition in UNi2Al3 (100) thin films on the current direction. The experimental fact that the resisitive transition occurs at slightly higher temperatures for I║a than for I║c can be explained within a model of two weakly coupled superconducting bands. Evidence is presented for the key assumption of the two-band model, namely that transport in and out of the ab-plane is generated on different, weakly coupled parts of the Fermi surface. Main indications are the angle dependence of the superconducting transition and the dependence of the upper critical field Bc2 on current and field orientation. Additionally, several possible alternative explanations for the directional splitting of the transition are excluded in this work. An origin due to scattering on crystal defects or impurities is ruled out, likewise a relation to ohmic heating or vortex dynamics. The shift of the transition temperature as function of the current density was found to behave as predicted by the Ginzburg-Landau theory for critical current depairing, which plays a significant role in the two-band model. In conclusion, the directional splitting of the resisitive transition has to be regarded an intrinsic and unique property of UNi2Al3 up to now. Therefore, UNi2Al3 is proposed as a role model for weakly coupled multiband superconductivity. Magnetoresistance in the normalconducting state was measured for UPd2Al3 and UNi2Al3. For UNi2Al3, a negative contribution was observed close to the antiferromagnetic ordering temperature TN only for I║a, which can be associated to reduced spin-disorder scattering. In agreement with previous results it is concluded that the magnetic moments have to be attributed to the same part of the Fermi surface which generates transport in the ab-plane.

Unconventional superconductivity of the heavy fermion compound UNi 2 Al 3

The heavy fermion compound UNi2Al3 exhibits the coexistence of superconductivity and magnetic order at low temperatures, stimulating speculations about possible exotic Cooper-pairing interaction in this superconductor. However, the preparation of good quality bulk single crystals of UNi2Al3 has proven to be a non-trivial task due to metallurgical problems, which result in the formation of an UAl2 impurity phase and hence a strongly reduced sample purity. The present work concentrates on the preparation, characterization and electronic properties investigation of UNi2Al3 single crystalline thin film samples. The preparation of thin films was accomplished in a molecular beam epitaxy (MBE) system. (100)-oriented epitaxial thin films of UNi2Al3 were grown on single crystalline YAlO3 substrates cut in (010)- or (112)-direction. The high crystallographic quality of the samples was proved by several characterisation methods, such as X-ray analysis, RHEED and TEM. To study the magnetic structure of epitaxial thin films resonant magnetic x-ray scattering was employed. The magnetic order of thin the film samples, the formation of magnetic domains with different moment directions, and the magnetic correlation length were discussed. The electronic properties of the UNi2Al3 thin films in the normal and superconducting states were investigated by means of transport measurements. A pronounced anisotropy of the temperature dependent resistivity ρ(T) was observed. Moreover, it was found that the temperature of the resistive superconducting transition depends on the current direction, providing evidence for multiband superconductivity in UNi2Al3. The initial slope of the upper critical field H′c2(T) of the thin film samples suggests an unconventional spin-singlet superconducting state, as opposed to bulk single crystal data. To probe the superconducting gap of UNi2Al3 directly by means of tunnelling spectroscopy many planar junctions of different design employing different techniques were prepared. Despite the tunneling regime of the junctions, no features of the superconducting density of state of UNi2Al3 were ever observed. It is assumed that the absence of UNi2Al3 gap features in the tunneling spectra was caused by imperfections of the tunnelling contacts. The superconductivity of UNi2Al3 was probably suppressed just in a degraded surface layer, resulting in tunneling into non superconducting UNi2Al3. However, alternative explanations such as intrinsic pair breaking effects at the interface to the barrier are also possible.

Thermoelectric performance of p-type TiCoSb half-Heusler compounds - Intrinsic phase separation and charge carrier concentration optimization as key to high efficiency

The world's rising demand of energy turns the development of sustainable and more efficient technologies for energy production and storage into an inevitable task. Thermoelectric generators, composed of pairs of n-type and p-type semiconducting materials, di¬rectly transform waste heat into useful electricity. The efficiency of a thermoelectric mate¬rial depends on its electronic and lattice properties, summarized in its figure of merit ZT. Desirable are high electrical conductivity and Seebeck coefficients, and low thermal con¬ductivity. Half-Heusler materials are very promising candidates for thermoelectric applications in the medium¬ temperature range such as in industrial and automotive waste heat recovery. The advantage of Heusler compounds are excellent electronic properties and high thermal and mechanical stability, as well as their low toxicity and elemental abundance. Thus, the main obstacle to further enhance their thermoelectric performance is their relatively high thermal conductivity.rn rnIn this work, the thermoelectric properties of the p-type material (Ti/Zr/Hf)CoSb1-xSnx were optimized in a multistep process. The concept of an intrinsic phase separation has recently become a focus of research in the compatible n-type (Ti/Zr/Hf)NiSn system to achieve low thermal conductivities and boost the TE performance. This concept is successfully transferred to the TiCoSb system. The phase separation approach can form a significant alternative to the previous nanostructuring approach via ball milling and hot pressing, saving pro¬cessing time, energy consumption and increasing the thermoelectric efficiency. A fundamental concept to tune the performance of thermoelectric materials is charge carrier concentration optimization. The optimum carrier concentration is reached with a substitution level for Sn of x = 0.15, enhancing the ZT about 40% compared to previous state-of-the-art samples with x = 0.2. The TE performance can be enhanced further by a fine-tuning of the Ti-to-Hf ratio. A correlation of the microstructure and the thermoelectric properties is observed and a record figure of merit ZT = 1.2 at 710°C was reached with the composition Ti0.25Hf0.75CoSb0.85Sn0.15.rnTowards application, the long term stability of the material under actual conditions of operation are an important issue. The impact of such a heat treatment on the structural and thermoelectric properties is investigated. Particularly, the best and most reliable performance is achieved in Ti0.5Hf0.5CoSb0.85Sn0.15, which reached a maximum ZT of 1.1 at 700°C. The intrinsic phase separation and resulting microstructure is stable even after 500 heating and cooling cycles.