In-situ-Hochtemperatur-Mössbauer-Spektroskopie und Bandstruktur-Rechnungen an Eisennitriden und gemischtvalenten Verbindungen

Zusammenfassung

Die stöchiometrischen Eisennitride g'-Fe₄N, e-Fe₃N und z-Fe₂N sind durchRöntgen- und Neutronenstreuung gut charakterisiert. Allerdings weist das Fe/N-Phasendiagramm noch vieleungeklärte Stellen auf. So konnten im Bereich von alpha-Fe bis g'-Fe₄N noch keine weiterenNitride isoliert werden. Die Verbindung a''-Fe₁₆N₂ konntenoch nicht rein darzustellen werden.

Besonderes Interesse besteht in der Aufklärung desMechanismus der Entstehung der Eisennitride bei derUmsetzung von a-Eisen mitAmmoniak. Diese Reaktion wird großtechnisch zurNitridierhärtung von Eisenwerkstücken genutzt.

Als Messmethode wurde die⁵⁷Fe-Mößbauer-Spektroskopiegewählt, die auf Kernspinübergängen von⁵⁷Fe beruht. Um in situ-Nitridierungen von Eisenproben mit Ammoniak mitder ⁵⁷Fe-Mößbauer-Spektroskopieverfolgen zu können, wurde eineHochtemperatur-Messzelle entwickelt, die es erlaubt,Messungen bis 1100 K durchzuführen. Die Messzelle wurde durch Messungen an Eisennitriden mitbekannter Stöchiometrie, wie z.B. g'-Fe₄N und e-Fe₃N, durchgeführt.

Neben ⁵⁷Fe-Mößbauer-Messungen wurdenim Rahmen des DFG-Schwerpunkt-Programms Reaktivitätin Festkörpern weitere Messungen (u.a.Hochtemperatur-Leitfähigkeitsmessungen)durchgeführt.

Die experimentellen Methoden wurden durchBandstruktur-Rechnungen ergänzt. Mit Hilfe der TB-LMTO-ASA-Methode erfolgten Rechnungen anÜbergangsmetallnitriden M₃N (M = Mn, Fe, Co,Ni, Cu) der 3d-Reihe. Hierbei konnte der experimentell bestimmte strukturelleÜbergang von hexagonalem Ni₃N zu kubischemCu₃N bestätigt werden.

Point defects in carbon nanostructures studied by in-situ electron microscopy

In the present work, the formation and migration of point defects induced by electron irradiation in carbon nanostructures, including carbon onions, nanotubes and graphene layers, were investigated by in-situ TEM. The mobility of carbon atoms normal to the layers in graphitic nanoparticles, the mobility of carbon interstitials inside SWCNTs, and the migration of foreign atoms in graphene layers or in layers of carbon nanotubes were studied. The diffusion of carbon atoms in carbon onions was investigated by annealing carbon onions and observing the relaxation of the compressed clusters in the temperature range of 1200 – 2000oC. An activation energy of 5.0±0.3 eV was obtained. This rather high activation energy for atom exchange between the layers not only prevents the exchange of carbon atoms between the layers at lower temperature but also explains the high morphological and mechanical stability of graphite nanostructures. The migration of carbon atoms in SWCNTs was investigated quantitatively by cutting SWCNT bundles repeatedly with a focused electron beam at different temperatures. A migration barrier of about 0.25 eV was obtained for the diffusion of carbon atoms inside SWCNTs. This is an experimental confirmation of the high mobility of interstitial atoms inside carbon nanotubes, which corroborates previously developed theoretical models of interstitial diffusivity. Individual Au and Pt atoms in one- or two-layered graphene planes and MWCNTs were monitored in real time at high temperatures by high-resolution TEM. The direct observation of the behavior of Au and Pt atoms in graphenic structures in a temperature range of 600 – 700°C allows us to determine the sites occupied by the metal atoms in the graphene layer and the diffusivities of the metal atoms. It was found that metal atoms were located in single or multiple carbon vacancies, not in off-plane positions, and diffused by site exchange with carbon atoms. Metal atoms showed a tendency to form clusters those were stable for a few seconds. An activation energy of around 2.5 eV was obtained for the in-plane migration of both Au and Pt atoms in graphene (two-dimensional diffusion). The rather high activation energy indicates covalent bonding between metal and carbon atoms. Metal atoms were also observed to diffuse along the open edge of graphene layers (one-dimensional diffusion) with a slightly lower activation energy of about 2.3 eV. It is also found that the diffusion of metal atoms in curved graphenic layers of MWCNTs is slightly faster than in planar graphene.