Complexes of polyelectrolytes with defined charge distance and different dendrimer counterions

Complexes of polyelectrolytes with defined charge distance and different dendrimer counterions Magdalena Chelmecka Max Planck Institute for Polymer Research; Ackermannweg 10; D-55128 Mainz ; Tel.: (+49) 06131- 379 – 226 A study of complexes in solution is of interest to investigate whether the formation of well-defined assemblies like in classical surfactant systems is possible. Aim of this thesis is to investigate the electrostatic self-assembly of linear polycations of varying charge distance with “large” counterions of varying architecture. We especially investigate the morphology of objects formed, but also their stability under salt free condition and after low molecular mass salt addition. As polycations, Poly(dialkylimino)-alkylene salts (Ionenes) I65MeBr and I25MeBr were chosen. Ionenes are synthesized via Menschutkin reaction and characterized by standard methods. Counterions are Polyamidoamine (PAMAM) dendrimers of generations G2.5, G5.5, G7.5 with -COONa surface groups and shape-persistent, Polyphenylene dendrimers of generation G1 with surface -COOH groups. A complex interplay of interactions is expected to direct the self assembly via electrostatic interaction, geometric factors, hydrophobic interaction or hydrogen bonds. Methods used for the investigation of complexes are: UV-spectroscopy, pH-metric techniques, dynamic and static light scattering, small angle neutron scattering,  potential measurements and potentiometric titration. Under certain conditions, (i.e. charge ratio of compounds, charge density of ionene and dendrimer also concentration of sample) polyelectrolyte systems composed of ionenes and dendrimers build complexes in solution. System compounds are typical polyelectrolytes, but structures which they build behave not usual for typical polyelectrolytes. In a one diffusion mode regime aggregates of about 100 nm hydrodynamic radius have been found. Such aggregates are core-shell or anisotropic core shell structures in the case of ionenes/PAMAM dendrimers complexes. These complexes are stable even at high ionic strength. In case of ionenes with poly(phenylene) dendrimers, hard sphere-like objects or spherical objects with hairy-like surface have been found in a one diffusion mode regime. Their stability at high ionic strength is lower. For the ionenes/poly(phenylene) dendrimers systems one transition point has been found from one to two diffusion processes, towards increasing ionene concentration, i.e. for the samples with fixed dendrimer concentration towards increasing ionic strength. For the diffusion profile of ionene/PAMAM dendrimers in most cases two transition regimes are observed. One at very low ionene concentration, the second one at high ionene concentrations, which again means for the samples with fixed dendrimer concentration, also at higher ionic strength. Both two mode regimes are separated by the one mode regime. As was confirmed experimentally, the one diffusion mode regime is caused by the motion of well defined assemblies. The two diffusion mode regimes are caused by the movement of different sized species in solution, large aggregates and middle-size aggregates (oligoaggregates). The location and also the number of transition points in the diffusion profiles is dependent on the ionene to dendrimer charge ratio, charge density of the compounds and concentration. No influence of the molecular mass of the ionene has been found. The aggregates are found to be charged on the surface, however this surface charge does not significantly influence the diffusion properties of the system.

Numerical coupling of thermal-electric network models and energy-transport equations including optoelectronic semiconductor devices

In this work the numerical coupling of thermal and electric network models with model equations for optoelectronic semiconductor devices is presented. Modified nodal analysis (MNA) is applied to model electric networks. Thermal effects are modeled by an accompanying thermal network. Semiconductor devices are modeled by the energy-transport model, that allows for thermal effects. The energy-transport model is expandend to a model for optoelectronic semiconductor devices. The temperature of the crystal lattice of the semiconductor devices is modeled by the heat flow eqaution. The corresponding heat source term is derived under thermodynamical and phenomenological considerations of energy fluxes. The energy-transport model is coupled directly into the network equations and the heat flow equation for the lattice temperature is coupled directly into the accompanying thermal network. The coupled thermal-electric network-device model results in a system of partial differential-algebraic equations (PDAE). Numerical examples are presented for the coupling of network- and one-dimensional semiconductor equations. Hybridized mixed finite elements are applied for the space discretization of the semiconductor equations. Backward difference formluas are applied for time discretization. Thus, positivity of charge carrier densities and continuity of the current density is guaranteed even for the coupled model.

Sensitivity analysis of a parabolic-elliptic problem

We consider the heat flux through a domain with subregions in which the thermal capacity approaches zero. In these subregions the parabolic heat equation degenerates to an elliptic one. We show the well-posedness of such parabolic-elliptic differential equations for general non-negative L-infinity-capacities and study the continuity of the solutions with respect to the capacity, thus giving a rigorous justification for modeling a small thermal capacity by setting it to zero. We also characterize weak directional derivatives of the temperature with respect to capacity as solutions of related parabolic-elliptic problems.

Über die Existenz invarianter Tori in Hamiltonschen Systemen, die bis auf eine endlich oft differenzierbare Störung analytisch und integrabel sind

Es wird die Existenz invarianter Tori in Hamiltonschen Systemen bewiesen, die bis auf eine 2n-mal stetig differenzierbare Störung analytisch und integrabel sind, wobei n die Anzahl der Freiheitsgrade bezeichnet. Dabei wird vorausgesetzt, dass die Stetigkeitsmodule der 2n-ten partiellen Ableitungen der Störung einer Endlichkeitsbedingung (Integralbedingung) genügen, welche die Hölderbedingung verallgemeinert. Bisher konnte die Existenz invarianter Tori nur unter der Voraussetzung bewiesen werden, dass die 2n-ten Ableitungen der Störung hölderstetig sind.

Populationsgenetik eisenzeitlicher Reiternomaden der Eurasischen Steppe

Vorliegende Dissertation beschäftigt sich mit der Populationsgenetik eisenzeitlicher Bevölkerungen der Eurasischen Steppe, die mit der skythischen Kultur assoziiert werden. Für die Analysen wurden 30 Fragmente der kodierenden Region und die HVR1 (16040–16400) des mitochondrialen Genoms, sowie 20 phänotypische Marker untersucht. Die Marker wurden durch Multiplex-PCRs angereichert, mit einem probenspezifischen barcode versehen und einer parallelen Sequenzanalyse mit dem 454 GS FLX Sequenzierer unterzogen. 97 Individuen wurden erfolgreich analysiert, von denen 19 aus dem Westen der Eurasischen Steppe und 78 aus dem Bereich des Altai-Gebirges stammen. Die populationsgenetischen Analysen ergaben geringe genetische Distanzen zwischen den skythischen Populationen aus dem Bereich des Altai-Gebirges, die sich vom 9. bis zum 3. Jahrhundert vor Christus erstrecken, was für eine kontinuierliche Bevölkerungsentwicklung sprechen könnte. Weiterhin finden sich geringe genetische Distanzen zwischen den Gruppen im Osten und Westen der Eurasischen Steppe, was auf eine gemeinsame Ursprungspopulation, oder zumindest Genfluss hinweisen kann. Die Ergebnisse aus dem Vergleich mit neolithischen und bronzezeitlichen Referenzpopulationen aus Zentralasien und den angrenzenden Gebieten weisen auf die Möglichkeit eines gemeinsamen zentral-asiatischen Ursprungs hin, zeigen aber auch, dass die östlichen und westlichen Gruppen der Eisenzeit jeweils zusätzlich lokalem Genfluss ausgesetzt waren. Die Allelfrequenzen der phänotypischen Marker deuten auf einen größeren europäischen Einfluss auf das östliche Zentralasien in der Eisenzeit hin, oder ansteigenden Genfluss aus Ostasien nach der Eisenzeit.