Oberflächenplasmonen-artige Resonanzen auf metallischen Gittern

Die Geometrie einer Metalloberfläche bestimmt die Wechselwirkung zwischen der Oberflächenplasmonenresonanz und anderen Energieformen wie Photonen, anderen Oberflächenplasmonen und molekularen Anregungen. In dieser Arbeit wird der Einfluss dieser Effekte auf die optischen Eigenschaften von metallischen Reliefgittern untersucht.Aufgrund von Modellrechungen werden auf tiefen Gitterstrukturen Resonanzen erwartet, die sich als selbstgekoppelte Oberflächenplasmonen interpretieren lassen. Diese Resonanzen wurden aufgrund der Symmetrie des elektromagnetischen Feldes klassifiziert. Es wurden tiefe Gitter mit unterschiedlichen Profilformen hergestellt, die die experimentelle Beobachtung von drei gekoppelten Resonanzen erlauben. Variationen in der Tiefe und Asymmetrie der Gitter sowie in der experimentellen Geometrie zeigen die theoretisch vorausgesagten Effekte.Fluoreszenzfarbstoffe können mit elektromagnetischen Oberflächenresonanzen Energie austauschen. Die Lokalisierung des elektrischen Feldes von gekoppelten Resonanzen führt zu einer Ortsabhängigkeit der Kopplung, die bei 'freien' Oberflächenplasmonen nicht beobachtet wird. Ein theoretisches Modell ist in der Lage, die experimentellen Befunde weitgehend zu beschreiben. Die Ortsabhägigkeit der photochemischen Zerstörungsrate erlaubt die Anwendung dieses Effektes zur Messung von Diffusionsphänomenen in dünnen Filmen.Des weiteren wurde die Polarisationsabhängigkeit der Anregung von Oberflächenplasmonen wurde in konischer Reflexionsgeometrie und die Rolle der Oberflächenplasmonen in der thermisch induzierten Lichtemission untersucht. Ferner wurde eine vereinfachte Auswertungsroutine zur Anwendung von Gittern in der Untersuchung von dünnen dielektrischen Filmen entwickelt.

Investigation of acceptor dopants in ZrNiSn half-Heusler materials

Thermoelectric generators (TEG) are solid state devices and are able to convert thermal energy directly into electricity and thus could play an important role in waste heat recovery in the near future. Half-Heusler (HH) compounds with the general formula MNiSn (M = Ti, Zr, Hf) built a promising class of materials for these applications because of their high Seebeck coefficients, their environmentally friendliness and their cost advantage over conventional thermoelectric materials.rnrnMuch of the existing literature on HH deals with thermoelectric characterization of n-type MNiSn and p-type MCoSb compounds. Studies on p-type MNiSn-based HHs are far fewer in number. To fabricate high efficient thermoelectric modules based on HH compounds, high performance p-type MNiSn systems need to be developed that are compatible with the existing n-type HH compounds. This thesis explores synthesis strategies for p-type MNiSn based compounds. In particular, the efficacy of transition metals (Sc, La) and main group elements (Al, Ga, In) as acceptor dopants on the Sn-site in ZrNiSn, was investigated by evaluating their thermoelectric performance. The most promising p-type materials could be achieved with transition metal dopants, where the introduction of Sc on the Zr side, yielded the highest Seebeck coefficient in a ternary NiSn-based HH compound up to this date. Hall effect and band gap measurements of this system showed, that the high mobility of minority carrier electrons dominate the transport properties at temperatures above 500 K. It could be shown that this is the reason, why n-type HH are successful TE materials for high temperature applications, and that p-types are subjected to bipolar effects which will lead to diminished thermoelectric efficiencies at high temperatures.rnrnTo complement the experimental investigations on different metal dopants and their influence on the TE properties of HH compounds, numerical solutions to the Boltzmann transport equation were used to predict the optimum carrier concentration where the maximum TE efficiency occurs for p-type HH compounds. The results for p-type samples showed that can not be treated within a simple parabolic band model approach, due to bipolar and multi-band effects.rnrnThe parabolic band model is commonly used for bulk TE materials. It is most accurate when the transport properties are dominated by one single carrier type. Since the transport properties of n-type HH are dominated by only one carrier type (high mobility electrons), it could be shown, that the use of a simple parabolic band model lead to a successful prediction of the optimized carrier concentration and thermoelectric efficiency in n-type HH compounds. rn

Numerical coupling of thermal-electric network models and energy-transport equations including optoelectronic semiconductor devices

In this work the numerical coupling of thermal and electric network models with model equations for optoelectronic semiconductor devices is presented. Modified nodal analysis (MNA) is applied to model electric networks. Thermal effects are modeled by an accompanying thermal network. Semiconductor devices are modeled by the energy-transport model, that allows for thermal effects. The energy-transport model is expandend to a model for optoelectronic semiconductor devices. The temperature of the crystal lattice of the semiconductor devices is modeled by the heat flow eqaution. The corresponding heat source term is derived under thermodynamical and phenomenological considerations of energy fluxes. The energy-transport model is coupled directly into the network equations and the heat flow equation for the lattice temperature is coupled directly into the accompanying thermal network. The coupled thermal-electric network-device model results in a system of partial differential-algebraic equations (PDAE). Numerical examples are presented for the coupling of network- and one-dimensional semiconductor equations. Hybridized mixed finite elements are applied for the space discretization of the semiconductor equations. Backward difference formluas are applied for time discretization. Thus, positivity of charge carrier densities and continuity of the current density is guaranteed even for the coupled model.