Top-quark pair production at hadron colliders

In this thesis we investigate several phenomenologically important properties of top-quark pair production at hadron colliders. We calculate double differential cross sections in two different kinematical setups, pair invariant-mass (PIM) and single-particle inclusive (1PI) kinematics. In pair invariant-mass kinematics we are able to present results for the double differential cross section with respect to the invariant mass of the top-quark pair and the top-quark scattering angle. Working in the threshold region, where the pair invariant mass M is close to the partonic center-of-mass energy sqrt{hat{s}}, we are able to factorize the partonic cross section into different energy regions. We use renormalization-group (RG) methods to resum large threshold logarithms to next-to-next-to-leading-logarithmic (NNLL) accuracy. On a technical level this is done using effective field theories, such as heavy-quark effective theory (HQET) and soft-collinear effective theory (SCET). The same techniques are applied when working in 1PI kinematics, leading to a calculation of the double differential cross section with respect to transverse-momentum pT and the rapidity of the top quark. We restrict the phase-space such that only soft emission of gluons is possible, and perform a NNLL resummation of threshold logarithms. The obtained analytical expressions enable us to precisely predict several observables, and a substantial part of this thesis is devoted to their detailed phenomenological analysis. Matching our results in the threshold regions to the exact ones at next-to-leading order (NLO) in fixed-order perturbation theory, allows us to make predictions at NLO+NNLL order in RG-improved, and at approximate next-to-next-to-leading order (NNLO) in fixed order perturbation theory. We give numerical results for the invariant mass distribution of the top-quark pair, and for the top-quark transverse-momentum and rapidity spectrum. We predict the total cross section, separately for both kinematics. Using these results, we analyze subleading contributions to the total cross section in 1PI and PIM originating from power corrections to the leading terms in the threshold expansions, and compare them to previous approaches. We later combine our PIM and 1PI results for the total cross section, this way eliminating uncertainties due to these corrections. The combined predictions for the total cross section are presented as a function of the top-quark mass in the pole, the minimal-subtraction (MS), and the 1S mass scheme. In addition, we calculate the forward-backward (FB) asymmetry at the Tevatron in the laboratory, and in the ttbar rest frames as a function of the rapidity and the invariant mass of the top-quark pair at NLO+NNLL. We also give binned results for the asymmetry as a function of the invariant mass and the rapidity difference of the ttbar pair, and compare those to recent measurements. As a last application we calculate the charge asymmetry at the LHC as a function of a lower rapidity cut-off for the top and anti-top quarks.

HCl gas gettering of 3d transition metals for crystalline silicon solar cell concepts

In order to reduce the costs of crystalline silicon solar cells, low-cost silicon materials like upgraded metallurgical grade (UMG) silicon are investigated for the application in the photovoltaic (PV) industry. Conventional high-purity silicon is made by cost-intensive methods, based on the so-called Siemens process, which uses the reaction to form chlorosilanes and subsequent several distillation steps before the deposition of high-purity silicon on slim high-purity silicon rods. UMG silicon in contrast is gained from metallurgical silicon by a rather inexpensive physicochemical purification (e.g., acid leaching and/or segregation). However, this type of silicon usually contains much higher concentrations of impurities, especially 3d transition metals like Ti, Fe, and Cu. These metals are extremely detrimental in the electrically active part of silicon solar cells, as they form recombination centers for charge carriers in the silicon band gap. This is why simple purification techniques like gettering, which can be applied between or during solar cell process steps, will play an important role for such low-cost silicon materials. Gettering in general describes a process, whereby impurities are moved to a place or turned into a state, where they are less detrimental to the solar cell. Hydrogen chloride (HCl) gas gettering in particular is a promising simple and cheap gettering technique, which is based on the reaction of HCl gas with transition metals to form volatile metal chloride species at high temperatures.rnThe aim of this thesis was to find the optimum process parameters for HCl gas gettering of 3d transition metals in low-cost silicon to improve the cell efficiency of solar cells for two different cell concepts, the standard wafer cell concept and the epitaxial wafer equivalent (EpiWE) cell concept. Whereas the former is based on a wafer which is the electrically active part of the solar cell, the latter uses an electrically inactive low-cost silicon substrate with an active layer of epitaxially grown silicon on top. Low-cost silicon materials with different impurity grades were used for HCl gas gettering experiments with the variation of process parameters like the temperature, the gettering time, and the HCl gas concentration. Subsequently, the multicrystalline silicon neighboring wafers with and without gettering were compared by element analysis techniques like neutron activation analysis (NAA). It was demonstrated that HCl gas gettering is an effective purification technique for silicon wafers, which is able to reduce some 3d transition metal concentrations by over 90%. Solar cells were processed for both concepts which could demonstrate a significant increase of the solar cell efficiency by HCl gas gettering. The efficiency of EpiWE cells could be increased by HCl gas gettering by approximately 25% relative to cells without gettering. First process simulations were performed based on a simple model for HCl gas gettering processes, which could be used to make qualitative predictions.