Tuning the structural and magnetic properties of Sr 2 FeReO 6 by substituting Fe and Re with valence invariant metals

In the course of this work the effect of metal substitution on the structural and magnetic properties of the double perovskites Sr2MM’O6 (M = Fe, substituted by Cr, Zn and Ga; M’ = Re, substituted by Sb) was explored by means of X-ray diffraction, magnetic measurements, band structure calculations, Mößbauer spectroscopy and conductivity measurements. The focus of this study was the determination of (i) the kind and structural boundary conditions of the magnetic interaction between the M and M’ cations and (ii) the conditions for the principal application of double perovskites as spintronic materials by means of the band model approach. Strong correlations between the electronic, structural and magnetic properties have been found during the study of the double perovskites Sr2Fe1-xMxReO6 (0 < x < 1, M = Zn, Cr). The interplay between van Hove-singularity and Fermi level plays a crucial role for the magnetic properties. Substitution of Fe by Cr in Sr2FeReO6 leads to a non-monotonic behaviour of the saturation magnetization (MS) and an enhancement for substitution levels up to 10 %. The Curie temperatures (TC) monotonically increase from 401 to 616 K. In contrast, Zn substitution leads to a continuous decrease of MS and TC. The diamagnetic dilution of the Fe-sublattice by Zn leads to a transition from an itinerant ferrimagnetic to a localized ferromagnetic material. Thus, Zn substitution inhibits the long-range ferromagnetic interaction within the Fe-sublattice and preserves the long-range ferromagnetic interaction within the Re-sublattice. Superimposed on the electronic effects is the structural influence which can be explained by size effects modelled by the tolerance factor t. In the case of Cr substitution, a tetragonal – cubic transformation for x > 0.4 is observed. For Zn substituted samples the tetragonal distortion linearly increases with increasing Zn content. In order to elucidate the nature of the magnetic interaction between the M and M’ cations, Fe and Re were substituted by the valence invariant main group metals Ga and Sb, respectively. X-ray diffraction reveals Sr2FeRe1-xSbxO6 (0 < x < 0.9) to crystallize without antisite disorder in the tetragonal distorted perovskite structure (space group I4/mmm). The ferrimagnetic behaviour of the parent compound Sr2FeReO6 changes to antiferromagnetic upon Sb substitution as determined by magnetic susceptibility measurements. Samples up to a doping level of 0.3 are ferrimagnetic, while Sb contents higher than 0.6 result in an overall antiferromagnetic behaviour. 57Fe Mößbauer results show a coexistence of ferri- and antiferromagnetic clusters within the same perovskite-type crystal structure in the Sb substitution range 0.3 < x < 0.8, whereas Sr2FeReO6 and Sr2FeRe0.9Sb0.1O6 are “purely” ferrimagnetic and Sr2FeRe0.1Sb0.9O6 contains antiferromagnetically ordered Fe sites only. Consequently, a replacement of the Re atoms by a nonmagnetic main group element such as Sb blocks the double exchange pathways Fe–O–Re(Sb)–O–Fe along the crystallographic axis of the perovskite unit cell and destroys the itinerant magnetism of the parent compound. The structural and magnetic characterization of Sr2Fe1-xGaxReO6 (0 < x < 0.7) exhibit a Ga/Re antisite disorder which is unexpected because the parent compound Sr2FeReO6 shows no Fe/Re antisite disorder. This antisite disorder strongly depends on the Ga content of the sample. Although the X-ray data do not hint at a phase separation, sample inhomogeneities caused by a demixing are observed by a combination of magnetic characterization and Mößbauer spectroscopy. The 57Fe Mößbauer data suggest the formation of two types of clusters, ferrimagnetic Fe- and paramagnetic Ga-based ones. Below 20 % Ga content, Ga statistically dilutes the Fe–O–Re–O–Fe double exchange pathways. Cluster formation begins at x = 0.2, for 0.2 < x < 0.4 the paramagnetic Ga-based clusters do not contain any Fe. Fe containing Ga-based clusters which can be detected by Mößbauer spectroscopy firstly appear for x = 0.4.

Speciation of metals in agricultural lime and contaminated soil

Die Verwendung von Metallen zur Entwicklung der heutigen fortschrittlichen technologischenrnGesellschaft lässt auf eine lange Geschichte zurück blicken. Im Zuge des letzten Jahrhundertsrnwurde realisiert, dass die chemischen und radioaktiven Eigenschaften von Metallen einernernsthafte Bedrohung für die Menschheit darstellen können. In der modernen Geochemie ist esrnallgemein akzeptiert, dass die spezifischen physikochemische Formen entscheidender sind, alsrndas Verhalten der gesamten Konzentration der Spurenmetalle in der Umwelt. Die Definition derrnArtbildung kann grob als die Identifizierung und Quantifizierung der verschiedenen Formen oderrnPhasen für ein Element zugeordnet werden. Die chemische Extraktion ist eine gemeinsamernSpeziierungstechnik bei der die Fraktionierung des Gesamtmetallgehaltes zur Analyse der Quellernanthropogener Metallkontamination und zur Vorhersage der Bioverfügbarkeit von verschiedenenrnMetallformen dient. Die Philosophie der partiellen und sequenziellen Extraktionsmethodernbesteht darin, dass insbesondere das Extraktionsmittel phasenspezifisch unter chemischemrnAngriff unterschiedlicher Mischungsformen steht. Die Speziation von Metall ist wichtig bei derrnBestimmung der Toxizität, Mobilität, Bioverfügbarkeit des Metalls und damit ihr Schicksal inrnder Umwelt und biologischem System. Die Artenbildungsanalyse kann für das Verständnis derrnAuswirkung auf die menschliche Gesundheit und bei ökologischen Risiken durch diernQuantifizierung von Metallspezies bei einem Untersuchungs-standort angewendet werden undrnanschließend können Sanierungsstrategien für den Standort umgesetzt werden. Mit Hilfe derrnSpezifizierung wurden Arsen und Kupfer in landwirtschaftlichem Kalkdünger und Thallium inrnkontaminierten Böden untersucht und in den folgenden Abschnitten im Einzelnen dargestellt.

HCl gas gettering of 3d transition metals for crystalline silicon solar cell concepts

In order to reduce the costs of crystalline silicon solar cells, low-cost silicon materials like upgraded metallurgical grade (UMG) silicon are investigated for the application in the photovoltaic (PV) industry. Conventional high-purity silicon is made by cost-intensive methods, based on the so-called Siemens process, which uses the reaction to form chlorosilanes and subsequent several distillation steps before the deposition of high-purity silicon on slim high-purity silicon rods. UMG silicon in contrast is gained from metallurgical silicon by a rather inexpensive physicochemical purification (e.g., acid leaching and/or segregation). However, this type of silicon usually contains much higher concentrations of impurities, especially 3d transition metals like Ti, Fe, and Cu. These metals are extremely detrimental in the electrically active part of silicon solar cells, as they form recombination centers for charge carriers in the silicon band gap. This is why simple purification techniques like gettering, which can be applied between or during solar cell process steps, will play an important role for such low-cost silicon materials. Gettering in general describes a process, whereby impurities are moved to a place or turned into a state, where they are less detrimental to the solar cell. Hydrogen chloride (HCl) gas gettering in particular is a promising simple and cheap gettering technique, which is based on the reaction of HCl gas with transition metals to form volatile metal chloride species at high temperatures.rnThe aim of this thesis was to find the optimum process parameters for HCl gas gettering of 3d transition metals in low-cost silicon to improve the cell efficiency of solar cells for two different cell concepts, the standard wafer cell concept and the epitaxial wafer equivalent (EpiWE) cell concept. Whereas the former is based on a wafer which is the electrically active part of the solar cell, the latter uses an electrically inactive low-cost silicon substrate with an active layer of epitaxially grown silicon on top. Low-cost silicon materials with different impurity grades were used for HCl gas gettering experiments with the variation of process parameters like the temperature, the gettering time, and the HCl gas concentration. Subsequently, the multicrystalline silicon neighboring wafers with and without gettering were compared by element analysis techniques like neutron activation analysis (NAA). It was demonstrated that HCl gas gettering is an effective purification technique for silicon wafers, which is able to reduce some 3d transition metal concentrations by over 90%. Solar cells were processed for both concepts which could demonstrate a significant increase of the solar cell efficiency by HCl gas gettering. The efficiency of EpiWE cells could be increased by HCl gas gettering by approximately 25% relative to cells without gettering. First process simulations were performed based on a simple model for HCl gas gettering processes, which could be used to make qualitative predictions.