A planar Penning trap

In this thesis I present theoretical and experimental results concern- ing the operation and properties of a new kind of Penning trap, the planar trap. It consists of circular electrodes printed on an isolating surface, with an homogeneous magnetic field pointing perpendicular to that surface. The motivation of such geometry is to be found in the construction of an array of planar traps for quantum informa- tional purposes. The open access to radiation of this geometry, and the long coherence times expected for Penning traps, make the planar trap a good candidate for quantum computation. Several proposals for quantum 2-qubit interactions are studied and estimates for their rates are given. An expression for the electrostatic potential is presented, and its fea- tures exposed. A detailed study of the anharmonicity of the potential is given theoretically and is later demonstrated by experiment and numerical simulations, showing good agreement. Size scalability of this trap has been studied by replacing the original planar trap by a trap twice smaller in the experimental setup. This substitution shows no scale effect apart from those expected for the scaling of the parameters of the trap. A smaller lifetime for trapped electrons is seen for this smaller trap, but is clearly matched to a bigger misalignment of the trap’s surface and the magnetic field, due to its more difficult hand manipulation. I also give a hint that this trap may be of help in studying non-linear dynamics for a sextupolarly perturbed Penning trap.

Unconventional superconductivity of the heavy fermion compound UNi 2 Al 3

The heavy fermion compound UNi2Al3 exhibits the coexistence of superconductivity and magnetic order at low temperatures, stimulating speculations about possible exotic Cooper-pairing interaction in this superconductor. However, the preparation of good quality bulk single crystals of UNi2Al3 has proven to be a non-trivial task due to metallurgical problems, which result in the formation of an UAl2 impurity phase and hence a strongly reduced sample purity. The present work concentrates on the preparation, characterization and electronic properties investigation of UNi2Al3 single crystalline thin film samples. The preparation of thin films was accomplished in a molecular beam epitaxy (MBE) system. (100)-oriented epitaxial thin films of UNi2Al3 were grown on single crystalline YAlO3 substrates cut in (010)- or (112)-direction. The high crystallographic quality of the samples was proved by several characterisation methods, such as X-ray analysis, RHEED and TEM. To study the magnetic structure of epitaxial thin films resonant magnetic x-ray scattering was employed. The magnetic order of thin the film samples, the formation of magnetic domains with different moment directions, and the magnetic correlation length were discussed. The electronic properties of the UNi2Al3 thin films in the normal and superconducting states were investigated by means of transport measurements. A pronounced anisotropy of the temperature dependent resistivity ρ(T) was observed. Moreover, it was found that the temperature of the resistive superconducting transition depends on the current direction, providing evidence for multiband superconductivity in UNi2Al3. The initial slope of the upper critical field H′c2(T) of the thin film samples suggests an unconventional spin-singlet superconducting state, as opposed to bulk single crystal data. To probe the superconducting gap of UNi2Al3 directly by means of tunnelling spectroscopy many planar junctions of different design employing different techniques were prepared. Despite the tunneling regime of the junctions, no features of the superconducting density of state of UNi2Al3 were ever observed. It is assumed that the absence of UNi2Al3 gap features in the tunneling spectra was caused by imperfections of the tunnelling contacts. The superconductivity of UNi2Al3 was probably suppressed just in a degraded surface layer, resulting in tunneling into non superconducting UNi2Al3. However, alternative explanations such as intrinsic pair breaking effects at the interface to the barrier are also possible.