Preparation and study of magnetic thin film based sub-micron structures

Due to its high Curie temperature of 420K and band structure calculations predicting 100% spin polarisation, Sr2FeMoO6 is a potential candidate for spintronic devices. However, the preparation of good quality thin films has proven to be a non-trivial task. Epitaxial Sr2FeMoO6 thin films were prepared by pulsed laser deposition on different substrates. Differing from previous reports a post-deposition annealing step at low oxygen partial pressure (10-5 mbar) was introduced and enabled the fabrication of reproducible, high quality samples. According to the structural properties of the substrates the crystal structure and morphology of the thin films are modified. The close interrelation between the structural, magnetic and electronic properties of Sr2FeMoO6 was studied. A detailed evaluation of the results allowed to extract valuable information on the microscopic nature of magnetism and charge transport. Smooth films with a mean roughness of about 2 nm have been achieved, which is a pre-requisite for a possible inclusion of this material in future devices. In order to establish device-oriented sub-micron patterning as a standard technique, electron beam lithography and focussed ion beam etching facilities have been put into operation. A detailed characterisation of these systems has been performed. To determine the technological prospects of new spintronics materials, the verification of a high spin polarisation is of vital interest. A popular technique for this task is point contact Andreev reflection (PCAR). Commonly, the charge transport in a transparent metal-superconductor contact of nanometer dimensions is attributed solely to coherent transport. If this condition is not fulfilled, inelastic processes in the constriction have to be considered. PCAR has been applied to Sr2FeMoO6 and the Heusler compound Co2Cr0.6Fe0.4Al. Systematic deviations between measured spectra and the standard models of PCAR have been observed. Therefore existing approaches have been generalised, in order to include the influence of heating. With the extended model the measured data was successfully reproduced but the analysis has revealed grave implications for the determination of spin polarisation, which was found to break down completely in certain cases.

Computational studies on the structure and stabilities of magnetic inter-metallic compounds

The purpose of this thesis is to further the understanding of the structural, electronic and magnetic properties of ternary inter-metallic compounds using density functional theory (DFT). Four main problems are addressed. First, a detailed analysis on the ternary Heusler compounds is made. It has long been known that many Heusler compounds ($X_2YZ$; $X$ and $Y$ transition elements, $Z$ main group element) exhibit interesting half-metallic and ferromagnetic properties. In order to understand these, the dependence of magnetic and electronic properties on the structural parameters, the type of exchange-correlation functional and electron-electron correlation was examined. It was found that almost all Co$_2YZ$ Heusler compounds exhibit half-metallic ferromagnetism. It is also observed that $X$ and $Y$ atoms mainly contribute to the total magnetic moment. The magnitude of the total magnetic moment is determined only indirectly by the nature of $Z$ atoms, and shows a trend consistent with Slater-Pauling behaviour in several classes of these compounds. In contrast to experiments, calculations give a non-integer value of the magnetic moment in certain Co$_2$-based Heusler compounds. To explain deviations of the calculated magnetic moment, the LDA+$U$ scheme was applied and it was found that the inclusion of electron-electron correlation beyond the LSDA and GGA is necessary to obtain theoretical description of some Heusler compounds that are half-metallic ferromagnets. The electronic structure and magnetic properties of substitutional series of the quaternary Heusler compound Co$_2$Mn$_{1-x}$Fe$_x$Si were investigated under LDA+$U$. The calculated band structure suggest that the most stable compound in a half-metallic state will occur at an intermediate Fe concentration. These calculated findings are qualitatively confirmed by experimental studies. Second, the effect of antisite disordering in the Co$_2$TiSn system was investigated theoretically as well as experimentally. Preservation of half-metallicity for Co$_2$TiSn was observed with moderate antisite disordering and experimental findings suggest that the Co and Ti antisites disorder amounts to approximately 10~% in the compound. Third, a systematic examination was carried out for band gaps and the nature (covalent or ionic) of bonding in semiconducting 8- and 18-electron or half-metallic ferromagnet half-Heusler compounds. It was found that the most appropriate description of these compounds from the viewpoint of electronic structures is one of a $YZ$ zinc blende lattice stuffed by the $X$ ion. Simple valence rules are obeyed for bonding in the 8- and 18-electron compounds. Fourth, hexagonal analogues of half-Heusler compounds have been searched. Three series of compounds were investigated: GdPdSb, GdAutextit{X} (textit{X} = Mn, Cd and In) and EuNiP. GdPdSb is suggested as a possible half-metallic weak ferromagnet at low temperature. GdAutextit{X} (textit{X} = Mn, Cd and In) and EuNiP were investigated because they exhibit interesting bonding, structural and magnetic properties. The results qualitatively confirm experimental studies on magnetic and structural behaviour in GdPdSb, GdAutextit{X} (textit{X} = Mn, Cd and In) and EuNiP compounds. ~

Magnetic tunneling junctions with the Heusler compound Co 2 Cr 0.6 Fe 0.4 Al

Materialen mit sehr hoher Spinpolarisation werden für Anwendungen im Bereich der Spin-Elektronik benötigt. Deshalb werden große Forschungsanstrengungen zur Untersuchung der Eigenschaften von Verbindungen mit potentiell halbmetallischem Charakter, d. h.mit 100% Spinpolarisation, unternommen. In halbmetallischen Verbindungen, erwartet man eine Lücke in der Zustandsdichte an der Fermi Energie für Ladungsträger einer Spinrichtung, wahrend die Ladungsträger mit der anderen Spinrichtung sich metallisch verhalten. Eine Konsequenz davon ist, dass ein Strom, der durch solche Verbindung fließt, voll spinpolarisiert ist. Die hohe Curie-Temperatur Tc (800 K) und der theoretisch vorhergesagte halbmetallische Charakter machen Co2Cr0.6Fe0.4Al (CCFA) zu einem guten Kandidaten für Spintronik-Anwendungen wie magnetische Tunnelkontakte (MTJs = Magnetic Tunneling Junctions). In dieser Arbeit werden die Ergebnisse der Untersuchung der elektronischen und strukturellen Eigenschaften von dünnen CCFA Schichten dargestellt. Diese Schichten wurden in MTJs integriert und der Tunnel-Magnetowiderstands-Effekt untersucht. Hauptziele waren die Messung der Spinpolarisation und Untersuchungen der elektronischen Struktur von CCFA. Der Einfluss verschiedener Depositionsparameter auf die Eigenschaften der Schichten, speziell auf der Oberflächenordnung und damit letztlich auf den Tunnel-Magnetowiderstand (TMR), wurde bestimmt. Epitaktische d¨unne CCFA Schichten mit zwei verschiedenen Wachstumsrichtungen wurden auf verschiedene Substrate und Pufferschichten deponiert. Ein Temperverfahren wurde eingesetzt um die strukturelle Eigenschaften der dünnen Schichten zu verbessern. Für die MTJs wurde Al2O3 als Barrierenmaterial verwendet und Co als Gegenelektrode gewählt. Die Mehrschicht-Systeme wurden in Mesa-Geometrie mit lithographischen Methoden strukturiert. Eine maximal Jullière Spinpolarisation von 54% wurde an Tunnelkontakte mit epitaktischen CCFA Schichten gemessen. Ein starker Einfluss der Tempernbedingungen auf dem TMR wurde festgestellt. Eine Erhörung des TMR wurde mit einer Verbesserung der Oberflächenordung der CCFA Schichten korreliert. Spektroskopische Messungen wurden an den MTJs durchgeführt. Diesen Messungen liefern Hinweise auf inelastische Elektron-Magnon und Elektron-Phonon Stossprozesse an den Grenzflächen. Einige der beobachteten Strukturen konnten mit der berechneten elektronischen Struktur von CCFA korreliert worden.

Unconventional superconductivity of the heavy fermion compound UNi 2 Al 3

The heavy fermion compound UNi2Al3 exhibits the coexistence of superconductivity and magnetic order at low temperatures, stimulating speculations about possible exotic Cooper-pairing interaction in this superconductor. However, the preparation of good quality bulk single crystals of UNi2Al3 has proven to be a non-trivial task due to metallurgical problems, which result in the formation of an UAl2 impurity phase and hence a strongly reduced sample purity. The present work concentrates on the preparation, characterization and electronic properties investigation of UNi2Al3 single crystalline thin film samples. The preparation of thin films was accomplished in a molecular beam epitaxy (MBE) system. (100)-oriented epitaxial thin films of UNi2Al3 were grown on single crystalline YAlO3 substrates cut in (010)- or (112)-direction. The high crystallographic quality of the samples was proved by several characterisation methods, such as X-ray analysis, RHEED and TEM. To study the magnetic structure of epitaxial thin films resonant magnetic x-ray scattering was employed. The magnetic order of thin the film samples, the formation of magnetic domains with different moment directions, and the magnetic correlation length were discussed. The electronic properties of the UNi2Al3 thin films in the normal and superconducting states were investigated by means of transport measurements. A pronounced anisotropy of the temperature dependent resistivity ρ(T) was observed. Moreover, it was found that the temperature of the resistive superconducting transition depends on the current direction, providing evidence for multiband superconductivity in UNi2Al3. The initial slope of the upper critical field H′c2(T) of the thin film samples suggests an unconventional spin-singlet superconducting state, as opposed to bulk single crystal data. To probe the superconducting gap of UNi2Al3 directly by means of tunnelling spectroscopy many planar junctions of different design employing different techniques were prepared. Despite the tunneling regime of the junctions, no features of the superconducting density of state of UNi2Al3 were ever observed. It is assumed that the absence of UNi2Al3 gap features in the tunneling spectra was caused by imperfections of the tunnelling contacts. The superconductivity of UNi2Al3 was probably suppressed just in a degraded surface layer, resulting in tunneling into non superconducting UNi2Al3. However, alternative explanations such as intrinsic pair breaking effects at the interface to the barrier are also possible.

Charge-transport simulations in organic semiconductors

In this thesis we have extended the methods for microscopic charge-transport simulations for organic semiconductors. In these materials the weak intermolecular interactions lead to spatially localized charge carriers, and the charge transport occurs as an activated hopping process between diabatic states. In addition to weak electronic couplings between these states, different electrostatic environments in the organic material lead to a broadening of the density of states for the charge energies which limits carrier mobilities.rnThe contributions to the method development includern(i) the derivation of a bimolecular charge-transfer rate,rn(ii) the efficient evaluation of intermolecular (outer-sphere) reorganization energies,rn(iii) the investigation of effects of conformational disorder on intramolecular reorganization energies or internal site energiesrnand (iv) the inclusion of self-consistent polarization interactions for calculation of charge energies.These methods were applied to study charge transport in amorphous phases of small molecules used in the emission layer of organic light emitting diodes (OLED).rnWhen bulky substituents are attached to an aromatic core in order to adjust energy levels or prevent crystallization, a small amount of delocalization of the frontier orbital to the substituents can increase electronic couplings between neighboring molecules. This leads to improved charge-transfer rates and, hence, larger charge-mobility. We therefore suggest using the mesomeric effect (as opposed to the inductive effect) when attaching substituents to aromatic cores, which is necessary for example in deep blue OLEDs, where the energy levels of a host molecule have to be adjusted to those of the emitter.rnFurthermore, the energy landscape for charges in an amorphous phase cannot be predicted by mesoscopic models because they approximate the realistic morphology by a lattice and represent molecular charge distributions in a multipole expansion. The microscopic approach shows that a polarization-induced stabilization of a molecule in its charged and neutral states can lead to large shifts, broadening, and traps in the distribution of charge energies. These results are especially important for multi-component systems (the emission layer of an OLED or the donor-acceptor interface of an organic solar cell), if the change in polarizability upon charging (or excitation in case of energy transport) is different for the components. Thus, the polarizability change upon charging or excitation should be added to the set of molecular parameters essential for understanding charge and energy transport in organic semiconductors.rnWe also studied charge transport in self-assembled systems, where intermolecular packing motives induced by side chains can increase electronic couplings between molecules. This leads to larger charge mobility, which is essential to improve devices such as organic field effect transistors, where low carrier mobilities limit the switching frequency.rnHowever, it is not sufficient to match the average local molecular order induced by the sidernchains (such as the pitch angle between consecutive molecules in a discotic mesophase) with maxima of the electronic couplings.rnIt is also important to make the corresponding distributions as narrow as possible compared to the window determined by the closest minima of thernelectronic couplings. This is especially important in one-dimensional systems, where charge transport is limited by the smallest electronic couplings.rnThe immediate implication for compound design is that the side chains should assist the self-assemblingrnprocess not only via soft entropic interactions, but also via stronger specific interactions, such as hydrogen bonding.rnrnrnrn

Der Einfluss des Angiotensin-II-Typ-2-Agonisten Compound 21 auf den neuronalen Schaden bei der Maus nach traumatischer Hirnläsion mittels Controlled Cortical Impact

Die Beeinflussung des sekundären Hirnschadens nach SHT ist Hauptansatzpunkt der klinischen Therapie. Gleichzeitig sind die zugrunde liegenden Mechanismen zum Großteil unklar und Gegenstand aktueller Forschung. In verschiedenen Studien scheint sich das Renin-Angiotensin-Aldosteron-System als Teil der Pathophysiologie bei der Entstehung des sekundären Hirnschadens und der neuronalen Inflammation nach SHT herauszukristallisieren. Der Fokus richtet sich mitunter auf den AT2- Rezeptor, dessen protektive Wirkung in verschiedensten Ischämiemodellen und Geweben gezeigt werden konnte.rnIn der vorliegenden Promotionsarbeit wurde erstmalig die Wirkung einer AT2- Stimulation auf histologische, inflammatorische und neuromotorische Parameter nach CCI untersucht. Eine neuroprotektive Wirkung der AT2-Stimulation konnte dabei nicht nachgewiesen werden. Es kam weder zu einer Beeinflussung histologischer noch neuromotorischer Parameter, allerdings scheint der AT2-Agonist C21 bei einer Dosierung von 0,03 mg/kg KG zu einer Stimulation der inflammatorischen Reaktion zu führen.

Noncollinear magnetism in Mn2RhSn Heusler compound

Heusler compounds is a large class of materials, which exhibits diverse fundamental phenomena, together with the possibility of their specific tailoring for various engineering demands. Present work discusses the magnetic noncollinearity in the family of noncentrosymmetric ferrimagnetic Mn2-based Heusler compounds. Based on the obtained experimental and theoretical results, Mn2YZ Heusler family is suspected to provide promising candidates for the formation of the skyrmion lattice. The work is focused on Mn2RhSn bulk polycrystalline sample, which serves as a prototype. It crystallizes in the tetragonal noncentrosymmetric structure (No. 119, I-4m2), which enables the anisotropic Dzyaloshinskii-Moriya (DM) exchange coupling. Additional short-range modulation, induced by the competing nearest and next-nearest interplanes Heisenberg exchange, is suppressed above the 80 K. This allows to develop the long-range modulations in the ideal ferrimagnetic structure within the ab crystallographic planes, and thus, favors to the occurrence of the skyrmion lattice within the temperature range of (80 ≤ T ≤ 270) K. The studies of Mn2RhSn were expandedrnto the broad composition range and continued on thin film samples.