The influence of heat treatment on the phase relations in mineral growth systems

ABSTRACT Corundum is one of the most famous gems materials. Different heat treatment methods for enhancement purposes are commonly applied and accepted in the gem market. With this reason, the identification of the natural, unheated corundum is intensively investigated. In this study, aluminium hydroxide minerals and zircon are focused to observe the crystallization and phase change of these minerals during heat treatment procedures. Aluminium hydroxide minerals can be transformed to alumina with the corundum structure by heating. The reaction history of aluminium hydroxide minerals containing corundum was investigated comparing it with diaspore, boehmite, gibbsite and bayerite by TG and DTA methods. These hydroxide minerals were entirely transformed to corundum after heating at 600°C. Zircon inclusions in corundums from Ilakaka, Madagascar, were investigated for the influence of different heat-treatment temperatures on the recovery of their crystalline structure and on possible reactions within and with the host crystals. The host corundum was heated at 500, 800, 1000, 1200, 1400, 1600 and 1800°C. The crystallinity, the trapped pressure, and the decomposition of the zircon inclusions within the host corundum have been investigated by Raman spectroscopy. Radiation-damaged zircon inclusions may be used as an indicator for unheated Ilakaka corundum crystals. They are fully recrystallized after heating at 1000°C influencing the lowering of the 3 Raman band shift, the decreasing of FWHM of the 3 Raman band and the decreasing of the trapped pressure between the inclusion and the host corundum. Under microscopic observation, surface alterations of the inclusions can be firstly seen from transparent into frosted-like appearance at 1400°C. Then, between 1600°C and 1800 °C, the inclusion becomes partly or even completely molten. The decomposition of the zircon inclusion to m-ZrO2 and SiO2-glass phases begins at the rim of the inclusion after heating from 1200°C to 1600°C which can be detected by the surface change, the increase of the 3 Raman band position and the trapped pressure. At 1800°C, the zircon inclusions entirely melt transforming to solid phases during cooling like m-ZrO2 and SiO2-glass accompanied by an increase of pressure between the transformed inclusion and its host.

Phosphonic acid-containing molecules as proton conductors and linkers for hybrid materials

In dieser Arbeit werden zwei Arten von nicht-kovalent verknüpften Netzwerkstrukturen vorgestellt, die aus phosphonsäurehaltigen Molekülen aufgebaut sind. Einerseits sollen diese phosphonsäurehaltigen Moleküle als Protonenleiter in Brennstoffzellen eingesetzt werden. Dies ist durch die Möglichkeit des kooperativen Protonentransports in wasserstoffbrückenhaltigen Netzwerken begründet. Auf der anderen Seite sollen die phosphonsäurehaltigen Moleküle unter Einsatz von Metallkationen zur Darstellung ionischer Netzwerke verwendet werden. In diesem Fall fungieren die phosphonierten Moleküle als Linker in porösen organisch-anorganischen Hybridmaterialien, die sich beispielsweise zur Gasspeicherung eignen.rnEine Brennstoffzelle stellt Energie mit hoher Effizienz und geringer Umweltbelastung bereit. Das Herzstück der Brennstoffzelle ist die Elektrolytmembran, die auch als Separator oder Protonenaustauschmembran (PEM) bezeichnet wird. Es wird davon ausgegangen, daß der Schlüssel zur Weiterentwicklung der PEM-Brennstoffzellen in der Entwicklung von Elektrolyten liegt, die ausschließlich und effizient Protonen transportieren und darüber hinaus chemisch (oxidationsbeständig) und mechanisch stabil sind. Die mechanische Stabilität betrifft insbesondere den Betrieb der Brennstoffzelle bei hohen Temperaturen und niedriger relativer Feuchtigkeit. In dieser Arbeit wird ein neuartiger Ansatz zum Erreichen eines hohen Protonentransports im Festkörper vorgestellt, der auf dem Einsatz kleiner Moleküle beruht, die durch Selbstorganisation eine kontinuierliche protonenleitende Phase erzeugen. Bis jetzt stellt Hexakis(p-phosphonatophenyl)benzol das erste Beispiel eines kristallinen Protonenleiters dar, der im festen Zustand eine hohe und konstante Leistung zeigt. Die Modifizierung von Hexakis(p-phosphonatophenyl)benzol, entweder durch Änderung von para- zu meta-Substitution oder die Einführung von Alkylketten, führt zu Verbindungen geringerer Kristallinität und niedriger Protonenleitfähigkeit.rnIm zweiten Teil der Arbeit wurde 1,3,5-Tris(p-phosphonatophenyl)benzol als Linker in der Synthese von offenen Phosphonat-Netzwerken eingesetzt. Es bilden sich aufgrund der ionischen Wechselwirkung zwischen den positiv geladenen Metallkationen und den negativ geladenen Phosphonsäuregruppen hochstabile Feststoffe. Eines der wichtigsten Ergebnisse dieser Arbeit besteht darin, daß 1,3,5-Tris(p-phosphonatophenyl)benzol als Linker zum Aufbau poröser Hybridmaterialien eingesetzt werden kann. Zum ersten Mal wurde ein dreifach phosphoniertes organisches Molekül zum Aufbau mikroporöser offener Phosphonat-Netzwerke verwendet. Zudem konnte gezeigt werden, daß die Porosität mit dem Wachstumsmechanismus dieser Materialien zusammenhängt. Es ist nur dann möglich ein gleichfalls mikroporöses und kristallines ionisches Netzwerk auf der Grundlage phosphonierter Moleküle zu erhalten, wenn Linker und Konnektor die gleiche Geometrie und Funktionalität besitzen.rn

Thermoelectric properties in phase-separated half-Heusler materials

The conversion of dissipated heat into electricity is the basic principle of thermoelectricity. In this context, half-Heusler (HH) compounds are promising thermoelectric (TE) materials for waste heat recovery. They meet all the requirements for commercial TE applications, ranging from good efficiencies via environmentally friendliness to being low cost materials. This work focused on the TE properties of Ti0.3Zr0.35Hf0.35NiSn-based HH materials. This compound undergoes an intrinsic phase separation into a Ti-poor and Ti-rich HH phase during a rapid solidification process. The resulting dendritic microstructure causes a drastic reduction of the thermal conductivity, leading to higher TE efficiencies in these materials. The TE properties and temperature dependence of the phase-separated Ti0.3Zr0.35Hf0.35NiSn compound were investigated. The TE properties can be adjusted depending on the annealing treatment. The extension of annealing time for 21 days at 1000 °C revealed a reduction of the thermal conductivity and thus an enhancement of the TE performance in this sample. An increase of annealing temperature caused a change of the phase fraction ratio in favor of the Ti-rich phase, leading to an improvement of the electronic properties. rnInspired by the TE properties of the Ti0.3Zr0.35Hf0.35NiSn HH compound, the performance of different n- and p-type materials, realized via site substitution with donor and acceptor elements was examined. The fabrication of a TE n- and p-type material pair based on one starting compound can guarantee similar TE and mechanical properties and is enormous beneficial for device engineering. As donor dopants V, Nb and Sb were tested. Depending on the lattice position small doping levels were sufficient to attain distinct improvement in their TE efficiency. Acceptor-induced doping with Sc, Y and Co caused a change in the transport behavior from n- to p- type conduction, revealing the highest Seebeck coefficients obtained in the MNiSn system. rnThen, the long-term stability of an exemplary n- and p-type HH compound was proven. Surprisingly, the dendritic microstructure can be maintained even after 500 cycles (1700 h) from 373 to 873 K. The TE performance of both n- and p-type materials showed no significant change under the long-term treatment, indicating the extraordinary temperature stability of these compounds. Furthermore both HH materials revealed similar temperature-dependence of their mechanical properties. This work demonstrates the excellent suitability of phase-separated HH materials for future TE applications in the moderate temperature range.rn

Investigation of acceptor dopants in ZrNiSn half-Heusler materials

Thermoelectric generators (TEG) are solid state devices and are able to convert thermal energy directly into electricity and thus could play an important role in waste heat recovery in the near future. Half-Heusler (HH) compounds with the general formula MNiSn (M = Ti, Zr, Hf) built a promising class of materials for these applications because of their high Seebeck coefficients, their environmentally friendliness and their cost advantage over conventional thermoelectric materials.rnrnMuch of the existing literature on HH deals with thermoelectric characterization of n-type MNiSn and p-type MCoSb compounds. Studies on p-type MNiSn-based HHs are far fewer in number. To fabricate high efficient thermoelectric modules based on HH compounds, high performance p-type MNiSn systems need to be developed that are compatible with the existing n-type HH compounds. This thesis explores synthesis strategies for p-type MNiSn based compounds. In particular, the efficacy of transition metals (Sc, La) and main group elements (Al, Ga, In) as acceptor dopants on the Sn-site in ZrNiSn, was investigated by evaluating their thermoelectric performance. The most promising p-type materials could be achieved with transition metal dopants, where the introduction of Sc on the Zr side, yielded the highest Seebeck coefficient in a ternary NiSn-based HH compound up to this date. Hall effect and band gap measurements of this system showed, that the high mobility of minority carrier electrons dominate the transport properties at temperatures above 500 K. It could be shown that this is the reason, why n-type HH are successful TE materials for high temperature applications, and that p-types are subjected to bipolar effects which will lead to diminished thermoelectric efficiencies at high temperatures.rnrnTo complement the experimental investigations on different metal dopants and their influence on the TE properties of HH compounds, numerical solutions to the Boltzmann transport equation were used to predict the optimum carrier concentration where the maximum TE efficiency occurs for p-type HH compounds. The results for p-type samples showed that can not be treated within a simple parabolic band model approach, due to bipolar and multi-band effects.rnrnThe parabolic band model is commonly used for bulk TE materials. It is most accurate when the transport properties are dominated by one single carrier type. Since the transport properties of n-type HH are dominated by only one carrier type (high mobility electrons), it could be shown, that the use of a simple parabolic band model lead to a successful prediction of the optimized carrier concentration and thermoelectric efficiency in n-type HH compounds. rn