Cobalt dotiertes ZnO als verdünnter magnetischer Halbleiter

Verdünnte magnetische Halbleiter (DMS) sind technologisch vielversprechende Materialien mit sowohl ferromagnetischen als auch halbleitenden Eigenschaften. Sie gehören zu den entscheidenden Verbindungen bei der Entwicklung neuartiger Spintronikanwendungen. Bisher scheiterte der technologische Einsatz jedoch daran, dass die Curie Temperatur der meisten magnetischen Halbleiter viel zu niedrig ist. Neue Verbindungen auf Basis von ZnO wie Zn1-xCoxO sollen jedoch Ferromagnetismus oberhalb von Raumtemperatur zeigen. Die theoretischen Grundlagen der magnetischen Wechselwirkungen sind jedoch nicht verstanden und erfordern daher umfangreiche experimentelle Untersuchungen. Im Rahmen dieser Arbeit wurden dünne Filme aus Zn0.95Co0.05O mittels Laserablation hergestellt und bezüglich ihrer magnetischen, elektrischen und strukturellen Eigenschaften untersucht, mit dem Ziel den Ferromagnetismus in diesem Material besser zu verstehen. Dabei kamen verschiedene experimentelle Methoden zum Einsatz: wie Magnetometrie, Röntgendiffraktometrie, Magnetischer Röntgenzirkulardichroismus (XMCD), Elektronenspinresonanz sowie magnetoelektrische Transportmessungen. Bei entsprechend defektfördernden Herstellungsbedingungen zeigen die Proben klare ferromagnetische Eigenschaften oberhalb von Raumtemperatur mit einer Sättigungsmagnetisierung von ca. 2 Bohr Magneton / Co sowie einer Remanenz von bis zu 90%. Elektrische Transportmessungen zeigen zudem einen deutlichen Magnetowiderstand sowie einen anomalen Hall Effekt. Letzterer steigt mit der Probenmagnetisierung und spricht für intrinsischen Ferromagnetismus sowie eine geringe Spinpolarisation. Da der Ferromagnetismus mit höherer Ladungsträgerdichte jedoch verschwindet, ist eine ferromagnetische Wechselwirkung über die Leitungselektronen auszuschließen. Eine genauere Auswertung der magnetoelektrischen Messdaten deutet zudem auf ein leitendes Störstellenband hin, das unter Umständen selbst spinpolarisiert ist. Vieles spricht somit dafür, dass die ferromagnetische Ordnung über magnetische Polaronen zustande kommt. Einige strukturelle und magnetometrische Ergebnisse sowie Elektronenspinresonanzmessungen deuten zudem auf metallische Ausscheidungen in Form von Cobalt Clustern hin, die einen zusätzlichen extrinsischen ferromagnetischen Beitrag liefern, der deutlich größer sein könnte als der intrinsische. Überraschenderweise zeigen XMCD Messungen jedoch, dass Cobalt überhaupt nicht am Ferromagnetismus beteiligt ist. Insgesamt gibt es Anzeichen, dass magnetische Defekte eine entscheidende Rolle hinsichtlich des Magnetismus in Zn0.95Co0.05O spielen.

Special Heusler compounds for spintronic applications

This work emphasizes the potential of Heusler compounds in a wide range of spintronic applications. Using electronic structure calculations it is possible to design compounds for specific applications. Examples for GMR and TMR applications, for spin injection into semiconductors, and for spin torque transfer applications will be shown. After a detailed introduction about spintronics and related materials chapter 5 reports about the investigation of new half-metallic compounds where the Fermi energy is tuned in the middle of the gap to result in more stable compounds for GMR and TMR applications. The bulk properties of the quaternary Heusler alloy Co2Mn(1-x)Fe(x)Si with the Fe concentration ranging from x=0 to 1 will be reported and the results suggest that the best candidate for applications may be found at an iron concentration of about 50%. Due to the effect that in the Co2Mn(1-x)Fe(x)Si series the transition metal carrying the localized moment is exchanged and this might lead to unexpected effects on the magnetic properties if the samples are not completely homogeneous chapter 6 reports about the optimization of the Heusler compounds for GMR and TMR applications. The structural and magnetic properties of the quaternary Heusler alloy Co2FeAl(1-x)Si(x) with varying Si concentration will be reported. From the combination of experimental (better order for high Si content) and theoretical findings (robust gap at x = 0.5) it is concluded that a compound with an intermediate Si concentration close to x=0.5-0.7 would be best suited for spintronic applications, especially for GMR and TMR applications. In chapter 7 the detailed investigation of compounds for spin injection into semiconductors will be reported. It will be shown that the diluted magnetic semiconductors based on CoTiSb with a very low lattice mismatch among each other are interesting materials for spintronics applications like Spin-LEDs or other spin injection devices. Chapter 8 refers about the investigation of the theoretically predicted half-metallic completely compensated-ferrimagnet Mn$_3$Ga as a suitable material for spin torque transfer applications. The Curie temperature is above 730~K and the electronic structure calculations indicate a nearly half-metallic ferrimagnetic order with 88% spin polarization at the Fermi energy.}

Finite-element discretization of 3D energy-transport equations for semiconductors

In this thesis a mathematical model was derived that describes the charge and energy transport in semiconductor devices like transistors. Moreover, numerical simulations of these physical processes are performed. In order to accomplish this, methods of theoretical physics, functional analysis, numerical mathematics and computer programming are applied. After an introduction to the status quo of semiconductor device simulation methods and a brief review of historical facts up to now, the attention is shifted to the construction of a model, which serves as the basis of the subsequent derivations in the thesis. Thereby the starting point is an important equation of the theory of dilute gases. From this equation the model equations are derived and specified by means of a series expansion method. This is done in a multi-stage derivation process, which is mainly taken from a scientific paper and which does not constitute the focus of this thesis. In the following phase we specify the mathematical setting and make precise the model assumptions. Thereby we make use of methods of functional analysis. Since the equations we deal with are coupled, we are concerned with a nonstandard problem. In contrary, the theory of scalar elliptic equations is established meanwhile. Subsequently, we are preoccupied with the numerical discretization of the equations. A special finite-element method is used for the discretization. This special approach has to be done in order to make the numerical results appropriate for practical application. By a series of transformations from the discrete model we derive a system of algebraic equations that are eligible for numerical evaluation. Using self-made computer programs we solve the equations to get approximate solutions. These programs are based on new and specialized iteration procedures that are developed and thoroughly tested within the frame of this research work. Due to their importance and their novel status, they are explained and demonstrated in detail. We compare these new iterations with a standard method that is complemented by a feature to fit in the current context. A further innovation is the computation of solutions in three-dimensional domains, which are still rare. Special attention is paid to applicability of the 3D simulation tools. The programs are designed to have justifiable working complexity. The simulation results of some models of contemporary semiconductor devices are shown and detailed comments on the results are given. Eventually, we make a prospect on future development and enhancements of the models and of the algorithms that we used.