Magnetic tunneling junctions with the Heusler compound Co 2 Cr 0.6 Fe 0.4 Al

Materialen mit sehr hoher Spinpolarisation werden für Anwendungen im Bereich der Spin-Elektronik benötigt. Deshalb werden große Forschungsanstrengungen zur Untersuchung der Eigenschaften von Verbindungen mit potentiell halbmetallischem Charakter, d. h.mit 100% Spinpolarisation, unternommen. In halbmetallischen Verbindungen, erwartet man eine Lücke in der Zustandsdichte an der Fermi Energie für Ladungsträger einer Spinrichtung, wahrend die Ladungsträger mit der anderen Spinrichtung sich metallisch verhalten. Eine Konsequenz davon ist, dass ein Strom, der durch solche Verbindung fließt, voll spinpolarisiert ist. Die hohe Curie-Temperatur Tc (800 K) und der theoretisch vorhergesagte halbmetallische Charakter machen Co2Cr0.6Fe0.4Al (CCFA) zu einem guten Kandidaten für Spintronik-Anwendungen wie magnetische Tunnelkontakte (MTJs = Magnetic Tunneling Junctions). In dieser Arbeit werden die Ergebnisse der Untersuchung der elektronischen und strukturellen Eigenschaften von dünnen CCFA Schichten dargestellt. Diese Schichten wurden in MTJs integriert und der Tunnel-Magnetowiderstands-Effekt untersucht. Hauptziele waren die Messung der Spinpolarisation und Untersuchungen der elektronischen Struktur von CCFA. Der Einfluss verschiedener Depositionsparameter auf die Eigenschaften der Schichten, speziell auf der Oberflächenordnung und damit letztlich auf den Tunnel-Magnetowiderstand (TMR), wurde bestimmt. Epitaktische d¨unne CCFA Schichten mit zwei verschiedenen Wachstumsrichtungen wurden auf verschiedene Substrate und Pufferschichten deponiert. Ein Temperverfahren wurde eingesetzt um die strukturelle Eigenschaften der dünnen Schichten zu verbessern. Für die MTJs wurde Al2O3 als Barrierenmaterial verwendet und Co als Gegenelektrode gewählt. Die Mehrschicht-Systeme wurden in Mesa-Geometrie mit lithographischen Methoden strukturiert. Eine maximal Jullière Spinpolarisation von 54% wurde an Tunnelkontakte mit epitaktischen CCFA Schichten gemessen. Ein starker Einfluss der Tempernbedingungen auf dem TMR wurde festgestellt. Eine Erhörung des TMR wurde mit einer Verbesserung der Oberflächenordung der CCFA Schichten korreliert. Spektroskopische Messungen wurden an den MTJs durchgeführt. Diesen Messungen liefern Hinweise auf inelastische Elektron-Magnon und Elektron-Phonon Stossprozesse an den Grenzflächen. Einige der beobachteten Strukturen konnten mit der berechneten elektronischen Struktur von CCFA korreliert worden.

Sensitivity analysis of a parabolic-elliptic problem

We consider the heat flux through a domain with subregions in which the thermal capacity approaches zero. In these subregions the parabolic heat equation degenerates to an elliptic one. We show the well-posedness of such parabolic-elliptic differential equations for general non-negative L-infinity-capacities and study the continuity of the solutions with respect to the capacity, thus giving a rigorous justification for modeling a small thermal capacity by setting it to zero. We also characterize weak directional derivatives of the temperature with respect to capacity as solutions of related parabolic-elliptic problems.

Detecting interfaces in a parabolic-elliptic problem from surface measurements

Assuming that the heat capacity of a body is negligible outside certain inclusions the heat equation degenerates to a parabolic-elliptic interface problem. In this work we aim to detect these interfaces from thermal measurements on the surface of the body. We deduce an equivalent variational formulation for the parabolic-elliptic problem and give a new proof of the unique solvability based on Lions’s projection lemma. For the case that the heat conductivity is higher inside the inclusions, we develop an adaptation of the factorization method to this time-dependent problem. In particular this shows that the locations of the interfaces are uniquely determined by boundary measurements. The method also yields to a numerical algorithm to recover the inclusions and thus the interfaces. We demonstrate how measurement data can be simulated numerically by a coupling of a finite element method with a boundary element method, and finally we present some numerical results for the inverse problem.

Unconventional superconductivity of the heavy fermion compound UNi 2 Al 3

The heavy fermion compound UNi2Al3 exhibits the coexistence of superconductivity and magnetic order at low temperatures, stimulating speculations about possible exotic Cooper-pairing interaction in this superconductor. However, the preparation of good quality bulk single crystals of UNi2Al3 has proven to be a non-trivial task due to metallurgical problems, which result in the formation of an UAl2 impurity phase and hence a strongly reduced sample purity. The present work concentrates on the preparation, characterization and electronic properties investigation of UNi2Al3 single crystalline thin film samples. The preparation of thin films was accomplished in a molecular beam epitaxy (MBE) system. (100)-oriented epitaxial thin films of UNi2Al3 were grown on single crystalline YAlO3 substrates cut in (010)- or (112)-direction. The high crystallographic quality of the samples was proved by several characterisation methods, such as X-ray analysis, RHEED and TEM. To study the magnetic structure of epitaxial thin films resonant magnetic x-ray scattering was employed. The magnetic order of thin the film samples, the formation of magnetic domains with different moment directions, and the magnetic correlation length were discussed. The electronic properties of the UNi2Al3 thin films in the normal and superconducting states were investigated by means of transport measurements. A pronounced anisotropy of the temperature dependent resistivity ρ(T) was observed. Moreover, it was found that the temperature of the resistive superconducting transition depends on the current direction, providing evidence for multiband superconductivity in UNi2Al3. The initial slope of the upper critical field H′c2(T) of the thin film samples suggests an unconventional spin-singlet superconducting state, as opposed to bulk single crystal data. To probe the superconducting gap of UNi2Al3 directly by means of tunnelling spectroscopy many planar junctions of different design employing different techniques were prepared. Despite the tunneling regime of the junctions, no features of the superconducting density of state of UNi2Al3 were ever observed. It is assumed that the absence of UNi2Al3 gap features in the tunneling spectra was caused by imperfections of the tunnelling contacts. The superconductivity of UNi2Al3 was probably suppressed just in a degraded surface layer, resulting in tunneling into non superconducting UNi2Al3. However, alternative explanations such as intrinsic pair breaking effects at the interface to the barrier are also possible.

Der Einfluss des Angiotensin-II-Typ-2-Agonisten Compound 21 auf den neuronalen Schaden bei der Maus nach traumatischer Hirnläsion mittels Controlled Cortical Impact

Die Beeinflussung des sekundären Hirnschadens nach SHT ist Hauptansatzpunkt der klinischen Therapie. Gleichzeitig sind die zugrunde liegenden Mechanismen zum Großteil unklar und Gegenstand aktueller Forschung. In verschiedenen Studien scheint sich das Renin-Angiotensin-Aldosteron-System als Teil der Pathophysiologie bei der Entstehung des sekundären Hirnschadens und der neuronalen Inflammation nach SHT herauszukristallisieren. Der Fokus richtet sich mitunter auf den AT2- Rezeptor, dessen protektive Wirkung in verschiedensten Ischämiemodellen und Geweben gezeigt werden konnte.rnIn der vorliegenden Promotionsarbeit wurde erstmalig die Wirkung einer AT2- Stimulation auf histologische, inflammatorische und neuromotorische Parameter nach CCI untersucht. Eine neuroprotektive Wirkung der AT2-Stimulation konnte dabei nicht nachgewiesen werden. Es kam weder zu einer Beeinflussung histologischer noch neuromotorischer Parameter, allerdings scheint der AT2-Agonist C21 bei einer Dosierung von 0,03 mg/kg KG zu einer Stimulation der inflammatorischen Reaktion zu führen.

Investigation of acceptor dopants in ZrNiSn half-Heusler materials

Thermoelectric generators (TEG) are solid state devices and are able to convert thermal energy directly into electricity and thus could play an important role in waste heat recovery in the near future. Half-Heusler (HH) compounds with the general formula MNiSn (M = Ti, Zr, Hf) built a promising class of materials for these applications because of their high Seebeck coefficients, their environmentally friendliness and their cost advantage over conventional thermoelectric materials.rnrnMuch of the existing literature on HH deals with thermoelectric characterization of n-type MNiSn and p-type MCoSb compounds. Studies on p-type MNiSn-based HHs are far fewer in number. To fabricate high efficient thermoelectric modules based on HH compounds, high performance p-type MNiSn systems need to be developed that are compatible with the existing n-type HH compounds. This thesis explores synthesis strategies for p-type MNiSn based compounds. In particular, the efficacy of transition metals (Sc, La) and main group elements (Al, Ga, In) as acceptor dopants on the Sn-site in ZrNiSn, was investigated by evaluating their thermoelectric performance. The most promising p-type materials could be achieved with transition metal dopants, where the introduction of Sc on the Zr side, yielded the highest Seebeck coefficient in a ternary NiSn-based HH compound up to this date. Hall effect and band gap measurements of this system showed, that the high mobility of minority carrier electrons dominate the transport properties at temperatures above 500 K. It could be shown that this is the reason, why n-type HH are successful TE materials for high temperature applications, and that p-types are subjected to bipolar effects which will lead to diminished thermoelectric efficiencies at high temperatures.rnrnTo complement the experimental investigations on different metal dopants and their influence on the TE properties of HH compounds, numerical solutions to the Boltzmann transport equation were used to predict the optimum carrier concentration where the maximum TE efficiency occurs for p-type HH compounds. The results for p-type samples showed that can not be treated within a simple parabolic band model approach, due to bipolar and multi-band effects.rnrnThe parabolic band model is commonly used for bulk TE materials. It is most accurate when the transport properties are dominated by one single carrier type. Since the transport properties of n-type HH are dominated by only one carrier type (high mobility electrons), it could be shown, that the use of a simple parabolic band model lead to a successful prediction of the optimized carrier concentration and thermoelectric efficiency in n-type HH compounds. rn

Noncollinear magnetism in Mn2RhSn Heusler compound

Heusler compounds is a large class of materials, which exhibits diverse fundamental phenomena, together with the possibility of their specific tailoring for various engineering demands. Present work discusses the magnetic noncollinearity in the family of noncentrosymmetric ferrimagnetic Mn2-based Heusler compounds. Based on the obtained experimental and theoretical results, Mn2YZ Heusler family is suspected to provide promising candidates for the formation of the skyrmion lattice. The work is focused on Mn2RhSn bulk polycrystalline sample, which serves as a prototype. It crystallizes in the tetragonal noncentrosymmetric structure (No. 119, I-4m2), which enables the anisotropic Dzyaloshinskii-Moriya (DM) exchange coupling. Additional short-range modulation, induced by the competing nearest and next-nearest interplanes Heisenberg exchange, is suppressed above the 80 K. This allows to develop the long-range modulations in the ideal ferrimagnetic structure within the ab crystallographic planes, and thus, favors to the occurrence of the skyrmion lattice within the temperature range of (80 ≤ T ≤ 270) K. The studies of Mn2RhSn were expandedrnto the broad composition range and continued on thin film samples.