Spin-crossover in metallomesogens of iron(II)

Covalent grafting mesogenic groups to the coordination cores of the parent mononuclear low-spin and spin-crossover compounds afforded metallomesogenic complexes of iron(II). In comparison with the parent complexes the spin-crossover properties of the alkylated derivatives are substantially modified. The type of the modification was found to be dependent on the properties of the parent system and the nature of the used anion, however, the general tendency is the destabilization of the low-spin state at the favor of spin-crossover or high-spin behavior below 400 K. The structural insight revealed the micro-segregated layered organization. The effect of the alkylation of the parent compounds consists first of all in the change of the lattice to a two-dimensional lamellar one retaining significant intermolecular contacts only within the ionic bilayers. The comprehensive analysis of the structural and thermodynamic data in the homologous series pointed at the mechanism of the interplay between the structural modification on melting and the induced anomalous change of the magnetic properties. A family of one-dimensional spin-crossover polymers was synthesized and characterized using a series of spectroscopic methods, X-ray powder diffraction, magnetic susceptibility measurements and differential scanning calorimetry. The copper analogue of was also synthesized and its crystal structure solved. In comparison with the mononuclear systems, the polymeric mesogens of iron(II) are less sensitive to the glass transition, which was attributed to the moderate concomitant variation of the structure. Nevertheless, the observed increase of the magnetic hysteresis with lengthening of the alkyl substituents was ascribed to the interplay of the structural reorganization of the coordination core due to spin-crossover with the structural delay in the spatial reorganization of the mesogenic substituents. The classification of mononuclear and polymeric metallomesogens according to the interactions between the structural- and the spin-transition and analysis of the data on the reported spin-crossover metallomesogens led to the separation of three types, namely: Type i: systems with coupling between the electronic structure of the iron(II) ions and the mesomorphic behavior of the substance; Type ii: systems where both transitions coexist in the same temperature region but are not coupled due to competition with the dehydration or due to negligible structural transformation; Type iii: systems where both transitions occur in different temperature regions and therefore are uncoupled. Fine-tuning, in particular regarding the temperature at which the spin-transition occurs with hysteresis properties responsible for the memory effect, are still a major challenge towards practical implementation of spin-crossover materials. A possible answer to the problem could be materials in which the spin-crossover transition is coupled with another transition easily controllable by external stimuli. In the present thesis we have shown the viability of the approach realized in the mesogenic systems with coupled phase- and spin-transitions.

Electronic transport in the heavy fermion superconductors UPd 2 Al 3 and UNi 2 Al 3

This work addresses the electronical properties of the superconductors UPd2Al3 and UNi2Al3 on the basis of thin film experiments. These isotructural compounds are ideal candiates to study the interplay of magnetism and superconductivity due to the differences of their magnetically ordered states, as well as the experimental evidence for a magnetic pairing mechanism in UPd2Al3. Epitaxial thin film samples of UPd2Al3 and UNi2Al3 were prepared using UHV Molecular Beam Epitaxy (MBE). For UPd2Al3, the change of the growth direction from the intrinsic (001) to epitaxial (100) was predicted and sucessfully demonstrated using LaAlO3 substrates cut in (110) direction. With optimized deposition process parameters for UPd2Al3 (100) on LaAlO3 (110) superconducting samples with critical temperatures up to Tc = 1.75K were obtained. UPd2Al3-AlOx-Ag mesa junctions with superconducting base electrode were prepared and shown to be in the tunneling regime. However, no signatures of a superconducting density of states were observed in the tunneling spectra. The resistive superconducting transition was probed for a possible dependence on the current direction. In contrast to UNi2Al3, the existence of such feature was excluded in UPd2Al3 (100) thin films. The second focus of this work is the dependence of the resisitive transition in UNi2Al3 (100) thin films on the current direction. The experimental fact that the resisitive transition occurs at slightly higher temperatures for I║a than for I║c can be explained within a model of two weakly coupled superconducting bands. Evidence is presented for the key assumption of the two-band model, namely that transport in and out of the ab-plane is generated on different, weakly coupled parts of the Fermi surface. Main indications are the angle dependence of the superconducting transition and the dependence of the upper critical field Bc2 on current and field orientation. Additionally, several possible alternative explanations for the directional splitting of the transition are excluded in this work. An origin due to scattering on crystal defects or impurities is ruled out, likewise a relation to ohmic heating or vortex dynamics. The shift of the transition temperature as function of the current density was found to behave as predicted by the Ginzburg-Landau theory for critical current depairing, which plays a significant role in the two-band model. In conclusion, the directional splitting of the resisitive transition has to be regarded an intrinsic and unique property of UNi2Al3 up to now. Therefore, UNi2Al3 is proposed as a role model for weakly coupled multiband superconductivity. Magnetoresistance in the normalconducting state was measured for UPd2Al3 and UNi2Al3. For UNi2Al3, a negative contribution was observed close to the antiferromagnetic ordering temperature TN only for I║a, which can be associated to reduced spin-disorder scattering. In agreement with previous results it is concluded that the magnetic moments have to be attributed to the same part of the Fermi surface which generates transport in the ab-plane.

Amidverknüpfte Ferrocene - schaltbare molekulare Drähte und Sensoren

In dieser Arbeit werden Synthesen und Eigenschaften von Verbindungen mit einer oder mehreren Ferrocen- bzw. Biferroceneinheiten beschrieben, die über Amid-, Anhydrid- oder Harnstoff-Funktionen verknüpft oder mittels Amidfunktion an α-Aminosäurederivate gebunden sind. Als Zentralbausteine dienen die künstlichen Aminosäuren 1’-Aminoferrocen-1-carbonsäure (Fca) bzw. 1’-Aminobiferrocen-1-carbonsäure (Bfca). Die Ferroceneinheit agiert als redoxschaltbares Gelenk, die Amidfunktion ermöglicht die Ausbildung von Sekundärstrukturen und die Bindung von Anionen. Das redoxschaltbare „Multiwellenlängen“-Sensorpaar [Dansyl-Ala-Fca-Ala-CH2-Naphthyl]0/+ ist in der Lage, insgesamt sieben Anionen aufgrund von sechs einfach zu erhaltenden optischen Messwerten eindeutig zu diskriminieren. Die Vorzugskonformation des neutralen Rezeptors mit intramolekularen Wasserstoffbrücken wird mittels X-Ray, NMR- und DFT-Methoden im Festkörper, in Lösung und in der Gasphase bestimmt. Die oligomeren Fca-Verbindungen SG-Fcan-HN-Fc (SG = Boc, Fmoc; n = 1, 2) und SG-Fca2-OMe (SG = Boc, Fmoc) werden mittels Peptidkupplung in Lösung hergestellt, Fmoc-Fca3-Gly-OMe, Fmoc-Fcan-OMe (n = 3-5) und Fmoc-Fca4-NH2 dagegen durch ein neu entwickeltes Festphasensynthese-Protokoll. Die amidverknüpften Verbindungen bilden eine „Zick-Zack“-Struktur mit 1,2’-Konformation der Fca-Einheiten und achtgliedrigen intramolekularen Wasserstoffbrücken-Ringen, wie durch X-Ray, 2D-NMR-, DFT-Methoden und Dipolmoment-Bestimmung gezeigt wird. Elektrochemische Experimente belegen eine elektronische Wechselwirkung der Eisenzentren. Die gemischt-valenten Verbindungen zeichnen sich durch IVCT-Banden im nahen Infrarot aus. Die elektronische Kopplungskonstante beträgt Hab ≈ 145-215 cm–1 für einen einzelnen FeII/FeIII-Übergang und belegt die Zugehörigkeit der Verbindungen zur Robin-Day-Klasse II. Im Festkörper sind die Valenzen gemäß Mößbauerspektren lokalisiert. Die vollständig oxidierten Verbindungen liegen nach DFT-Rechnungen nicht mehr in einer „Zick-Zack“-Struktur, sondern in einer gestreckten Konformation vor. Als Nebenprodukte bei der Amidkupplung werden die Anhydride SG-(Fca)2O (SG = Ac, Boc, Fmoc) isoliert. Diese zählen aufgrund des Fehlens einer IVCT-Bande zur Klasse I-II. Die ferrocenyloge Bfca wird in Form der N- und C-geschützten Bfca auf zwei Wegen synthetisiert. Schlüsselschritte stellen die Cu(II)-vermittelte Homokupplung bzw. die Pd-katalysierte Stille-Kupplung dar. Bfca und die amid- und harnstoffverknüpften Bis-Bfca-Verbindungen besitzen keine nachweisbare Vorzugskonformation in Lösung. Die gemischt-valenten Bfca-Kationen zeigen eine IVCT-Bande (Hab ≈ 300-600 cm–1) und gehören eher zur Klasse II-III. Die gemischt-valenten Verbindungen des als Nebenprodukt isolierten Tetraferrocenylstannans Sn[Fn(COOMe)4] (Fn = 1,1’-Ferrocenylen) mit einatomiger σ-Brücke zwischen den Ferroceneinheiten, zeigen IVCT-Banden im NIR-Spektrum und gehören somit zur Klasse II. Die elektronischen Kopplungen in Sn[Fn(COOMe)4]+/2+ betragen Hab ≈ 145 und 220 cm–1.

Electronic structure and physical properties of Heusler compounds for thermoelectric and spintronic applications

This thesis focuses on synthesis as well as investigations of the electronic structure and properties of Heusler compounds for spintronic and thermoelectric applications.rnThe first part reports on the electronic and crystal structure as well as the mechanical, magnetic, and transport properties of the polycrystalline Heusler compound Co2MnGe. The crystalline structure was examined in detail by extended X-ray absorption fine structure spectroscopy and anomalous X-ray diffraction. The low-temperature magnetic moment agrees well with the Slater-Pauling rule and indicates a half-metallic ferromagnetic state of the compound, as is predicted by ab-initio calculations. Transport measurements and hard X-ray photoelectron spectroscopy (HAXPES) were performed to explain the electronic structure of the compound.rnA major part of the thesis deals with a systematical investigation of Heusler compounds for thermoelectric applications. Few studies have been reported on thermoelectric properties of p-type Heusler compounds. Therefore, this thesis focuses on the search for new p-type Heusler compounds with high thermoelectric efficiency. The substitutional series NiTi1−xMxSn and CoTi1−xMxSb (where M = Sc, V and 0 ≤ x ≤ 0.2) were synthesized and investigated theoretically and experimentally with respect to electronic structure and transport properties. The results show the possibility to create n-type and p-type thermoelectrics within one Heusler compound. The pure compounds showed n-type behavior, while under Sc substitution the system switched to p-type behavior. A maximum Seebeck coefficient of +230 μV/K (at 350 K) was obtained for NiTi0.26Sc0.04Zr0.35Hf0.35Sn, which is one of the highest values for p-type thermoelectric compounds based on Heusler alloys up to now. HAXPES valence band measurement show massive in gap states for the parent compounds NiTiSn, CoTiSb and NiTi0.3Zr0.35Hf0.35Sn. This proves that the electronic states close to the Fermi energy play a key role for the behavior of the transport properties. Furthermore, the electronic structure of the gapless Heusler compounds PtYSb, PtLaBi and PtLuSb were investigated by bulk sensitive HAXPES. The linear behavior of the spectra close to εF proves the bulk origin of Dirac-cone type density of states. Furthermore, a systematic study on the optical and transport properties of PtYSb is presented. The compound exhibits promising thermoelectric properties with a high figure of merit (ZT = 0.2) and a Hall mobility μh of 300 cm2/Vs at 350 K.rnThe last part of this thesis describes the linear dichroism in angular-resolved photoemission from the valence band of NiTi0.9Sc0.1Sn and NiMnSb. High resolution photoelectron spectroscopy was performed with an excitation energy of hν = 7.938 keV. The linear polarization of the photons was changed using an in-vacuum diamond phase retarder. Noticeable linear dichroism is found in the valence bands and this allows for a symmetry analysis of the contributing states. The differences in the spectra are found to be caused by symmetry dependent angular asymmetry parameters, and these occur even in polycrystalline samples without preferential crystallographic orientation.rnIn summary, Heusler compounds with 1:1:1 and 2:1:1 stoichiometry were synthesized and examined by chemical and physical methods. Overall, this thesis shows that the combination of first-principle calculations, transport measurements and high resolution high energy photoelectron spectroscopy analysis is a very powerful tool for the design and development of new materials for a wide range of applications from spintronic applications to thermoelectric applications.rn

Thermoelectric properties in phase-separated half-Heusler materials

The conversion of dissipated heat into electricity is the basic principle of thermoelectricity. In this context, half-Heusler (HH) compounds are promising thermoelectric (TE) materials for waste heat recovery. They meet all the requirements for commercial TE applications, ranging from good efficiencies via environmentally friendliness to being low cost materials. This work focused on the TE properties of Ti0.3Zr0.35Hf0.35NiSn-based HH materials. This compound undergoes an intrinsic phase separation into a Ti-poor and Ti-rich HH phase during a rapid solidification process. The resulting dendritic microstructure causes a drastic reduction of the thermal conductivity, leading to higher TE efficiencies in these materials. The TE properties and temperature dependence of the phase-separated Ti0.3Zr0.35Hf0.35NiSn compound were investigated. The TE properties can be adjusted depending on the annealing treatment. The extension of annealing time for 21 days at 1000 °C revealed a reduction of the thermal conductivity and thus an enhancement of the TE performance in this sample. An increase of annealing temperature caused a change of the phase fraction ratio in favor of the Ti-rich phase, leading to an improvement of the electronic properties. rnInspired by the TE properties of the Ti0.3Zr0.35Hf0.35NiSn HH compound, the performance of different n- and p-type materials, realized via site substitution with donor and acceptor elements was examined. The fabrication of a TE n- and p-type material pair based on one starting compound can guarantee similar TE and mechanical properties and is enormous beneficial for device engineering. As donor dopants V, Nb and Sb were tested. Depending on the lattice position small doping levels were sufficient to attain distinct improvement in their TE efficiency. Acceptor-induced doping with Sc, Y and Co caused a change in the transport behavior from n- to p- type conduction, revealing the highest Seebeck coefficients obtained in the MNiSn system. rnThen, the long-term stability of an exemplary n- and p-type HH compound was proven. Surprisingly, the dendritic microstructure can be maintained even after 500 cycles (1700 h) from 373 to 873 K. The TE performance of both n- and p-type materials showed no significant change under the long-term treatment, indicating the extraordinary temperature stability of these compounds. Furthermore both HH materials revealed similar temperature-dependence of their mechanical properties. This work demonstrates the excellent suitability of phase-separated HH materials for future TE applications in the moderate temperature range.rn

Variational Monte Carlo study of the hydrogen electronic structure at ultra-high pressure

Die causa finalis der vorliegenden Arbeit ist das Verständnis des Phasendiagramms von Wasserstoff bei ultrahohen Drücken, welche von nichtleitendem H2 bis hin zu metallischem H reichen. Da die Voraussetzungen für ultrahohen Druck im Labor schwer zu schaffen sind, bilden Computersimulationen ein wichtiges alternatives Untersuchungsinstrument. Allerdings sind solche Berechnungen eine große Herausforderung. Eines der größten Probleme ist die genaue Auswertung des Born-Oppenheimer Potentials, welches sowohl für die nichtleitende als auch für die metallische Phase geeignet sein muss. Außerdem muss es die starken Korrelationen berücksichtigen, die durch die kovalenten H2 Bindungen und die eventuellen Phasenübergänge hervorgerufen werden. Auf dieses Problem haben unsere Anstrengungen abgezielt. Im Kontext von Variationellem Monte Carlo (VMC) ist die Shadow Wave Function (SWF) eine sehr vielversprechende Option. Aufgrund ihrer Flexibilität sowohl lokalisierte als auch delokalisierte Systeme zu beschreiben sowie ihrer Fähigkeit Korrelationen hoher Ordnung zu berücksichtigen, ist sie ein idealer Kandidat für unsere Zwecke. Unglücklicherweise bringt ihre Formulierung ein Vorzeichenproblem mit sich, was die Anwendbarkeit limitiert. Nichtsdestotrotz ist es möglich diese Schwierigkeit zu umgehen indem man die Knotenstruktur a priori festlegt. Durch diesen Formalismus waren wir in der Lage die Beschreibung der Elektronenstruktur von Wasserstoff signifikant zu verbessern, was eine sehr vielversprechende Perspektive bietet. Während dieser Forschung haben wir also die Natur des Vorzeichenproblems untersucht, das sich auf die SWF auswirkt, und dabei ein tieferes Verständnis seines Ursprungs erlangt. Die vorliegende Arbeit ist in vier Kapitel unterteilt. Das erste Kapitel führt VMC und die SWF mit besonderer Ausrichtung auf fermionische Systeme ein. Kapitel 2 skizziert die Literatur über das Phasendiagramm von Wasserstoff bei ultrahohem Druck. Das dritte Kapitel präsentiert die Implementierungen unseres VMC Programms und die erhaltenen Ergebnisse. Zum Abschluss fasst Kapitel 4 unsere Bestrebungen zur Lösung des zur SWF zugehörigen Vorzeichenproblems zusammen.

Thermoelectric performance of p-type TiCoSb half-Heusler compounds - Intrinsic phase separation and charge carrier concentration optimization as key to high efficiency

The world's rising demand of energy turns the development of sustainable and more efficient technologies for energy production and storage into an inevitable task. Thermoelectric generators, composed of pairs of n-type and p-type semiconducting materials, di¬rectly transform waste heat into useful electricity. The efficiency of a thermoelectric mate¬rial depends on its electronic and lattice properties, summarized in its figure of merit ZT. Desirable are high electrical conductivity and Seebeck coefficients, and low thermal con¬ductivity. Half-Heusler materials are very promising candidates for thermoelectric applications in the medium¬ temperature range such as in industrial and automotive waste heat recovery. The advantage of Heusler compounds are excellent electronic properties and high thermal and mechanical stability, as well as their low toxicity and elemental abundance. Thus, the main obstacle to further enhance their thermoelectric performance is their relatively high thermal conductivity.rn rnIn this work, the thermoelectric properties of the p-type material (Ti/Zr/Hf)CoSb1-xSnx were optimized in a multistep process. The concept of an intrinsic phase separation has recently become a focus of research in the compatible n-type (Ti/Zr/Hf)NiSn system to achieve low thermal conductivities and boost the TE performance. This concept is successfully transferred to the TiCoSb system. The phase separation approach can form a significant alternative to the previous nanostructuring approach via ball milling and hot pressing, saving pro¬cessing time, energy consumption and increasing the thermoelectric efficiency. A fundamental concept to tune the performance of thermoelectric materials is charge carrier concentration optimization. The optimum carrier concentration is reached with a substitution level for Sn of x = 0.15, enhancing the ZT about 40% compared to previous state-of-the-art samples with x = 0.2. The TE performance can be enhanced further by a fine-tuning of the Ti-to-Hf ratio. A correlation of the microstructure and the thermoelectric properties is observed and a record figure of merit ZT = 1.2 at 710°C was reached with the composition Ti0.25Hf0.75CoSb0.85Sn0.15.rnTowards application, the long term stability of the material under actual conditions of operation are an important issue. The impact of such a heat treatment on the structural and thermoelectric properties is investigated. Particularly, the best and most reliable performance is achieved in Ti0.5Hf0.5CoSb0.85Sn0.15, which reached a maximum ZT of 1.1 at 700°C. The intrinsic phase separation and resulting microstructure is stable even after 500 heating and cooling cycles.