Surface-enhanced vibrational techniques for the detection of synthetic organic colorants

The research project object of this thesis is focused on the development of an advanced analytical system based on the combination of an improved thin layer chromatography (TLC) plate coupled with infrared (FTIR) and Raman microscopies for the detection of synthetic dyes. Indeed, the characterization of organic colorants, which are commonly present in mixtures with other components and in a very limited amount, still represents a challenging task in scientific analyses of cultural heritage materials. The approach provides selective spectral fingerprints for each compound, foreseeing the complementary information obtained by micro ATR-RAIRS-FTIR and SERS-Raman analyses, which can be performed on the same separated spot. In particular, silver iodide (AgI) applied on a gold coated slide is proposed as an efficient stationary phase for the discrimination of complex analyte mixtures, such as dyes present in samples of art-historical interest. The gold-AgI-TLC plate shows high performances related both to the chromatographic separation of analytes and to the spectroscopic detection of components. The use of a mid-IR transparent inorganic salt as the stationary phase avoids interferences of the background absorption in FTIR investigations. Moreover, by ATR microscopy measurements performed on the gold-AgI surface, a considerable enhancement in the intensity of spectra is observed. Complementary information can be obtained by Raman analyses, foreseeing a SERS activity of the AgI substrate. The method has been tested for the characterization of a mixture of three synthetic organic colorants widely used in dyeing processes: Brilliant Green (BG1), Rhodamine B (BV10) and Methylene Blue (BB9).

Deposizione elettrochimica di film polimerici foto-attivi per la realizzazione di celle solari

Plastic solar cells bear the potential for large-scale power generation based on flexible, lightweight, inexpensive materials. Since the discovery of the photo-induced electron transfer from a conjugated polymer (electron-donor) to fullerene or its derivatives molecules (electron-acceptors), followed by the introduction of the bulk heterojunction concept which means donors and acceptors blended together to realize the fotoactive layer, materials and deposition techniques have been extensively studied. In this work, electrochemical-deposition methods of polymeric conductive films were studied in order to realize bulk heterojunction solar cells. Indium Tin Oxide (ITO) glass electrodes modified with a thin layer of poly(3,4-ethylenedioxythiophene) (PEDOT) were electrochemically prepared under potentiodynamic and potentiostatic conditions; then those techniques were applied for the electrochemical co-deposition of donor and acceptor on modified ITO electrode to produce the active layer (blend). For the deposition of the electron-donor polymer the electropolymerization of many functionalized thiophene monomers was investigated while, as regards acceptors, fullerene was used first, then the study was focused on its derivative PCBM ([6,6]-phenyl-C61-butyric acid methyl ester). The polymeric films obtained (PEDOT and blend) were electrochemically and spectrophotometrically characterized and the film thicknesses were evaluated by atomic force microscopy (AFM). Finally, to check the performances and the efficiency of the realized solar cells, tests were carried out under standard conditions. Nowadays bulk heterojunction solar cells are still poorly efficient to be competitively commercialized. A challenge will be to find new materials and better deposition techniques in order to obtain better performances. The research has led to several breakthroughs in efficiency, with a power conversion efficiency approaching 5 %. The efficiency of the solar cells produced in this work is even lower (lower than 1 %). Despite all, solar cells of this type are interesting and may represent a cheaper and easier alternative to traditional silicon-based solar panels.

Numerical simulation of interdigitated back contact hetero-junction solar cells

The goal of this thesis is the application of an opto-electronic numerical simulation to heterojunction silicon solar cells featuring an all back contact architecture (Interdigitated Back Contact Hetero-Junction IBC-HJ). The studied structure exhibits both metal contacts, emitter and base, at the back surface of the cell with the objective to reduce the optical losses due to the shadowing by front contact of conventional photovoltaic devices. Overall, IBC-HJ are promising low-cost alternatives to monocrystalline wafer-based solar cells featuring front and back contact schemes, in fact, for IBC-HJ the high concentration doping diffusions are replaced by low-temperature deposition processes of thin amorphous silicon layers. Furthermore, another advantage of IBC solar cells with reference to conventional architectures is the possibility to enable a low-cost assembling of photovoltaic modules, being all contacts on the same side. A preliminary extensive literature survey has been helpful to highlight the specific critical aspects of IBC-HJ solar cells as well as the state-of-the-art of their modeling, processing and performance of practical devices. In order to perform the analysis of IBC-HJ devices, a two-dimensional (2-D) numerical simulation flow has been set up. A commercial device simulator based on finite-difference method to solve numerically the whole set of equations governing the electrical transport in semiconductor materials (Sentuarus Device by Synopsys) has been adopted. The first activity carried out during this work has been the definition of a 2-D geometry corresponding to the simulation domain and the specification of the electrical and optical properties of materials. In order to calculate the main figures of merit of the investigated solar cells, the spatially resolved photon absorption rate map has been calculated by means of an optical simulator. Optical simulations have been performed by using two different methods depending upon the geometrical features of the front interface of the solar cell: the transfer matrix method (TMM) and the raytracing (RT). The first method allows to model light prop-agation by plane waves within one-dimensional spatial domains under the assumption of devices exhibiting stacks of parallel layers with planar interfaces. In addition, TMM is suitable for the simulation of thin multi-layer anti reflection coating layers for the reduction of the amount of reflected light at the front interface. Raytracing is required for three-dimensional optical simulations of upright pyramidal textured surfaces which are widely adopted to significantly reduce the reflection at the front surface. The optical generation profiles are interpolated onto the electrical grid adopted by the device simulator which solves the carriers transport equations coupled with Poisson and continuity equations in a self-consistent way. The main figures of merit are calculated by means of a postprocessing of the output data from device simulation. After the validation of the simulation methodology by means of comparison of the simulation result with literature data, the ultimate efficiency of the IBC-HJ architecture has been calculated. By accounting for all optical losses, IBC-HJ solar cells result in a theoretical maximum efficiency above 23.5% (without texturing at front interface) higher than that of both standard homojunction crystalline silicon (Homogeneous Emitter HE) and front contact heterojuction (Heterojunction with Intrinsic Thin layer HIT) solar cells. However it is clear that the criticalities of this structure are mainly due to the defects density and to the poor carriers transport mobility in the amorphous silicon layers. Lastly, the influence of the most critical geometrical and physical parameters on the main figures of merit have been investigated by applying the numerical simulation tool set-up during the first part of the present thesis. Simulations have highlighted that carrier mobility and defects level in amorphous silicon may lead to a potentially significant reduction of the conversion efficiency.

Manufacturing and characterization of amorphous silicon alloys passivation layers for silicon hetero-junction solar cells

Nel presente lavoro di tesi magistrale sono stati depositati e caratterizzati film sottili (circa 10 nm) di silicio amorfo idrogenato (a-Si:H), studiando in particolare leghe a basso contenuto di ossigeno e carbonio. Tali layer andranno ad essere implementati come strati di passivazione per wafer di Si monocristallino in celle solari ad eterogiunzione HIT (heterojunctions with intrinsic thin layer), con le quali recentemente è stato raggiunto il record di efficienza pari a 24.7% . La deposizione è avvenuta mediante PECVD (plasma enhanced chemical vapour deposition). Tecniche di spettroscopia ottica, come FT-IR (Fourier transform infrared spectroscopy) e SE (spettroscopic ellipsometry) sono state utilizzate per analizzare le configurazioni di legami eteronucleari (Si-H, Si-O, Si-C) e le proprietà strutturali dei film sottili: un nuovo metodo è stato implementato per calcolare i contenuti atomici di H, O e C da misure ottiche. In tal modo è stato possibile osservare come una bassa incorporazione (< 10%) di ossigeno e carbonio sia sufficiente ad aumentare la porosità ed il grado di disordine a lungo raggio del materiale: relativamente a quest’ultimo aspetto, è stata sviluppata una nuova tecnica per determinare dagli spettri ellisometrici l’energia di Urbach, che esprime la coda esponenziale interna al gap in semiconduttori amorfi e fornisce una stima degli stati elettronici in presenza di disordine reticolare. Nella seconda parte della tesi sono stati sviluppati esperimenti di annealing isocrono, in modo da studiare i processi di cristallizzazione e di effusione dell’idrogeno, correlandoli con la degradazione delle proprietà optoelettroniche. L’analisi dei differenti risultati ottenuti studiando queste particolari leghe (a-SiOx e a-SiCy) ha permesso di concludere che solo con una bassa percentuale di ossigeno o carbonio, i.e. < 3.5 %, è possibile migliorare la risposta termica dello specifico layer, ritardando i fenomeni di degradazione di circa 50°C.

Studio delle proprieta ottiche di film di silicon oxynitrides (sion) per applicazioni fotovoltaiche

Nelle celle solari HIT (Heterojunction Intrinsic Thin layer) attualmente in circolazione il materiale maggiormente utilizzato è sicuramente il silicio, per la sua buona caratteristica di assorbimento e disponibilità in natura. Tuttavia, la struttura amorfa del silicio impiegato come emettitore, limita fortemente la conducibilità e aumenta gli effetti di degradazione legati all'esposizione alla luce. In quest'ottica, nel presente lavoro di tesi, vengono analizzati sottili layers di Silicon Oxynitride ossigenato, depositati in forma nanocristallina presso l'Università di Costanza su substrati in vetro, tramite PECVD (Plasma-Enhanced Chemical Vapor Deposition). Il materiale, che non presenta i difetti intrinseci della forma amorfa, è dal punto di vista delle proprietà fisiche fondamentali ancora poco conosciuto e rappresenta una possibile alternativa agli analoghi campioni in forma amorfa. Le misure e le analisi presentate in questa tesi, svolte presso il Dipartimento di Fisica e Astronomia di Bologna, sono finalizzate ad indagare le principali proprietà ottiche, quali l'energy gap e l'indice di rifrazione dei layers. I risultati ottenuti, espressi in funzione dei parametri di deposizione, mostrano che un aumento della concentrazione di ossigeno in fase di deposito implica un aumento lineare dell'ampiezza dell'energy gap e un calo dell'indice di rifrazione. Anche altri parametri come la potenza di deposito e il tempo di annealing sembrano giocare un ruolo importante sul valore dell'energy gap. I risultati appaiono inoltre essere in buon accordo con quanto ottenuto da studi precedenti su layers simili ma con una maggiore fase amorfa. In conclusione, la possibilità di regolare il valore dell'energy gap e l'indice di rifrazione in base ai parametri di deposizione, unita alle buone prerogative tipiche dei materiali cristallini, conferisce al materiale buone prospettive per applicazioni fotovoltaiche come emettitori in celle ad eterogiunzione o rivestimenti con proprietà antiriflettenti

Film di silicon oxinitride (sion) per applicazioni fotovoltaiche, studio di transizioni ottiche.

I materiali per applicazioni fotovoltaiche hanno destato un interesse crescente nella comunità scienti�ca negli ultimi decenni. Le celle HIT (Het- erojunction Intrinsic Thin Layer ) sono dispositivi di ultima generazione che hanno raggiunto e�cienza elevata mantenendo bassi i costi di pro- duzione, e impiegano silicio amorfo (a-Si) come strato emettitore per il suo buon assorbimento della luce e silicio cristallino come regione attiva. La struttura amorfa del silicio presenta però una bassa conducibilità, oltre ad e�etti di degradazione che limitano considerevolmente la durevolezza di una cella. Per questo motivo si stanno cercando possibili alternative al silicio amorfo, in particolare strutture multifase e composti di silicio, ossigeno ed azoto. In questo lavoro sono esposti i risultati dell'analisi di sottili lay- er di Silicon Oxynitride ossigenato (SiOx Ny :H), in forma microcristallina, deposti tramite PECVD (P lasma-Enhanced Chemical Vapor Deposition) su vetro presso l'università di Costanza. La forma microcristallina è una distribuzione di agglomerati cristallini dell'ordine di grandezza di un mi- crometro in una matrice di silicio amorfo, e attualmente le sue proprietà ottiche ed elettroniche non sono ancora state studiate in maniera appro- fondita. Nonostante ciò, è invece evidente che la fase microstallina non presenta tanti difetti intrinseci come la forma amorfa e ne è quindi una val- ida alternativa. In questa ottica, si è svolto uno studio sperimentale delle proprietà ottiche di layers in forma microcristallina di SiOx Ny :H, quali la misura del gap energetico. I risultati sperimentali, volti a trovare la dipen- denza delle caratteristiche dai parametri di deposizione dei layers, hanno mostrato una riduzione del gap energetico con la concentrazione di N2 O, uno dei gas precursori utilizzati nella deposizione dei layers in camera di processo. In conclusione si può dire che il μc−SiOx Ny :H ha le buone carat- teristiche tipiche dei semiconduttori cristallini, che unite alla possibilità di regolare il valore del gap energetico in base alle scelte in fase di deposizione, gli conferisce buone prospettive per applicazioni in celle fotovoltaiche, come emettitore in celle ad eterogiunzione.

Simulazione numerica di celle solari in silicio ad eterogiunzione ad un sole e in concentrazione

Il lavoro di tesi ha come obiettivo lo studio e lo sviluppo tramite simulazioni numeriche di due celle in silicio ad eterogiunzione, una con parametri forniti dal CNR (Comitato Nazionale delle Ricerche) ed un’altra di tipo HIT (Heterojunction with Intrinsic Thin-layer). Lo studio e lo sviluppo delle due celle sono stati effettuati mediante un flusso TCAD il quale permette una maggiore flessibilità e completezza nella descrizione dei modelli fisici ed elettrici.

Proprietà ottiche di film sottili a base di silicio per applicazioni fotovoltaiche

Questa tesi ha come obiettivo quello di misurare la dipendenza spettrale di alcune proprietà ottiche, come trasmittanza e riflettanza, al fine di ricavare l’energy gap di film sottili costituiti da nanocrystalline silicon oxynitride (nc-SiOxNy) per applicazioni in celle solari HIT (Heterojunction Intrinsic Thin layer). Questi campioni sono stati depositati presso l’Università di Konstanz (Germania) tramite tecnica PECVD (Plasma-Enhanced Chemical Vapor Deposition). Questo materiale risulta ancora poco conosciuto per quanto riguarda le proprietà optoelettroniche e potrebbe presentare una valida alternativa a silicio amorfo (a-Si) e ossido di silicio idrogenato amorfo (a-SiOx:H) che sono attualmente utilizzati in questo campo. Le misure sono state effettuate presso i laboratori del Dipartimento di Fisica e Astronomia, settore di Fisica della Materia, dell’Università di Bologna. I risultati ottenuti mostrano che i campioni che non hanno subito alcun trattamento termico (annealing) presentano un energy gap che cresce linearmente rispetto alla diluizione di protossido di azoto in percentuale. Nei campioni analizzati sottoposto ad annealing a 800°C si è osservato un aumento dell’Eg dopo il trattamento. Un risultato ottimale consiste in un gap energetico maggiore di quello del silicio amorfo (a-Si) e del silicio amorfo idrogenato (a-Si:H), attualmente utilizzati in questa tipologia di celle, per evitare che questo layer assorba la luce solare che deve invece essere trasmessa al silicio sottostante. Per questo motivo i valori ottenuti risultano molto promettenti per future applicazioni fotovoltaiche.

Inkjet-printed poly(N-isopropylacrylamide)/graphene electrodes for selective electroanalytical sensing

The main research topic of the present master thesis consisted in the modification and electrochemical testing of inkjet printed graphene electrodes with a thin polymeric hydrogel layer made of cross-linked poly(N-isopropylacrylamide) (PNIPAAM) acting as a functional layer to fabricate selective sensors. The first experimental activities dealt with the synthesis of the polymeric hydrogel and the modification of the active surface of graphene sensors through photopolymerization. Simultaneous inkjet printing and photopolymerization of the hydrogel precursor inks onto graphene demonstrated to be the most effective and reproducible technique for the modification of the electrode with PNIPAAM. The electrochemical performance of the modified electrodes was tested through cyclic voltammetry. Voltammograms with standard redox couples with either positive, neutral or negative charges, suggested an electrostatic filtering effect by the hydrogel blocking negatively charged redox species in near neutral pH electrolyte solutions from reaching the electrode surface. PNIPAAM is a known thermo-responsive polymer, but the variation of temperature did not influence the filtering properties of the hydrogels for the redox couples studied. However, a variation of the filter capacity of the material was observed at pH 2 in which the PNIPAAM hydrogel, most likely in protonated form, became impermeable to positively charged redox species and permeable to negatively charged species. Finally, the filtering capacity of the electrodes modified with PNIPAAM was evaluated for the electrochemical determination of analytes in presence of negatively charge potential interferents, such as antioxidants like ascorbic acid. The outcome of the final experiments suggested the possibility to use the inkjet-printed PNIPAAM thin layer for electroanalytical applications as an electrostatic filter against interferents of opposite charges, typically present in complex matrices, such as food and beverages.

Fabrication by magnetron sputtering and characterization of electrodes based on CuIn0.7Ga0.3Se2 (CIGS)

This thesis work aims to produce and test multilayer electrodes for their use as photocathode in a PEC device. The electrode developed is based on CIGS, a I-III-VI2 semiconductor material composed of copper (Cu), indium (In), Gallium (Ga) and selenium (Se). It has a bandgap in the range of 1.0-2.4 eV and an absorption coefficient of about 105cm−1, which makes it a promising photocathode for PEC water splitting. The idea of our multilayer electrode is to deposit a thin layer of CdS on top of CIGS to form a solid-state p–n junction and lead to more efficient charge separation. In addition another thin layer of AZO (Aluminum doped zinc oxide) is deposit on top of CdS since it would form a better alignment between the AZO/CdS/CIGS interfaces, which would help to drive the charge transport further and minimize charge recombination. Finally, a TiO2 layer on top of the electrodes is used as protective layer during the H2 evolution. FTO (Fluorine doped tin oxide) and Molybdenum are used as back-contact. We used the technique of RF magnetron sputtering to deposit the thin layers of material. The structural characterization performed by XDR measurement confirm a polycrystalline chalcopyrite structural with a preferential orientation along the (112) direction for the CIGS. From linear fit of the Tauc plot, we get an energy gap of about 1.16 eV. In addition, from a four points measurements, we get a resistivity of 0.26 Ωcm. We performed an electrochemical characterization in cell of our electrodes. The results show that our samples have a good stability but produce a photocurrent of the order of μA, three orders of magnitude smaller than our targets. The EIS analysis confirm a significant depletion of the species in front of the electrode causing a lower conversion of the species and less current flows.

Non-line-of-sight localization with frequency-selective metasurfaces

An emerging technology, that Smart Radio Environments rely on to improve wireless link quality, are Reconfigurable Intelligent Surfaces (RISs). A RIS, in general, can be understood as a thin layer of EM composite material, typically mounted on the walls or ceilings of buildings, which can be reconfigured even after its deployment in the network. RISs made by composing artificial materials in an engineered way, in order to obtain unconventional characteristics, are called metasurfaces. Through the programming of the RIS, it is possible to control and/or modify the radio waves that affect it, thus shaping the radio environment. To overcome the limitations of RISs, the metaprism represents an alternative: it is a passive and non-reconfigurable frequency-selective metasurface that acts as a metamirror to improve the efficiency of the wireless link. In particular, using an OFDM (Orthogonal Frequency-Division Multiplexing) signaling it is possible to control the reflection of the signal, suitably selecting the sub-carrier assigned to each user, without having to interact with the metaprism or having to estimate the CSI. This thesis investigates how OFDM signaling and metaprism can be used for localization purposes, especially to extend the coverage area at low cost, in a scenario where the user is in NLoS (Non-line-of-sight) conditions with respect to the base station, both single antenna. In particular, the paper concerns the design of the analytical model and the corresponding Matlab implementation of a Maximum Likelihood (ML) estimator able to estimate the unknown position, behind an obstacle, from which a generic user transmits to a base station, exploiting the metaprism.

Measurement of LSP-induced residual stresses and fatigue life on thin-walled aluminium alloys specimens

This thesis work encloses activities carried out in the Laser Center of the Polytechnic University of Madrid and the laboratories of the University of Bologna in Forlì. This thesis focuses on the superficial mechanical treatment for metallic materials called Laser Shock Peening (LSP). This process is a surface enhancement treatment which induces a significant layer of beneficial compressive residual stresses underneath the surface of metal components in order to improve the detrimental effects of the crack growth behavior rate in it. The innovation aspect of this work is the LSP application to specimens with extremely low thickness. In particular, after a bibliographic study and comparison with the main treatments used for the same purposes, this work analyzes the physics of the operation of a laser, its interaction with the surface of the material and the generation of the surface residual stresses which are fundamentals to obtain the LSP benefits. In particular this thesis work regards the application of this treatment to some Al2024-T351 specimens with low thickness. Among the improvements that can be obtained performing this operation, the most important in the aeronautic field is the fatigue life improvement of the treated components. As demonstrated in this work, a well-done LSP treatment can slow down the progress of the defects in the material that could lead to sudden failure of the structure. A part of this thesis is the simulation of this phenomenon using the program AFGROW, with which have been analyzed different geometric configurations of the treatment, verifying which was better for large panels of typical aeronautical interest. The core of the LSP process are the residual stresses that are induced on the material by the interaction with the laser light, these can be simulated with the finite elements but it is essential to verify and measure them experimentally. In the thesis are introduced the main methods for the detection of those stresses, they can be mechanical or by diffraction. In particular, will be described the principles and the detailed realization method of the Hole Drilling measure and an introduction of the X-ray Diffraction; then will be presented the results I obtained with both techniques. In addition to these two measurement techniques will also be introduced Neutron Diffraction method. The last part refers to the experimental tests of the fatigue life of the specimens, with a detailed description of the apparatus and the procedure used from the initial specimen preparation to the fatigue test with the press. Then the obtained results are exposed and discussed.

Morphological and optical properties of SiON thin films for photovoltaic applications

In the last years technologies related to photovoltaic energy have rapidly developed and the interest on renewable energy power source substantially increased. In particular, cost reduction and appropriate feed-in tariff contributed to the increase of photovoltaic installation, especially in Germany and Italy. However, for several technologies, the observed experimental efficiency of solar cells is still far from the theoretical maximum efficiency, and thus there is still room for improvement. In this framework the research and development of new materials and new solar devices is mandatory. In this thesis the morphological and optical properties of thin films of nanocrystalline silicon oxynitride (nc-SiON) have been investigated. This material has been studied in view of its application in Si based heterojunction solar cells (HIT). Actually, a-Si:H is used now in these cells as emitter layer. Amorphous SiO_x N_y has already shown excellent properties, such as: electrical conductivity, optical energy gap and transmittance higher than the ones of a-Si:H. Nc-SiO_x N_y has never been investigated up to now, but its properties can surpass the ones of amorphous SiON. The films of nc-SiON have been deposited at the University of Konstanz (Germany). The properties of these films have been studied using of atomic force microscopy and optical spectroscopy methods. This material is highly complex as it is made by different coexisting phases. The main purpose of this thesis is the development of methods for the analyses of morphological and optical properties of nc-SiON and the study of the reliability of those methods to the measurement of the characteristics of these silicon films. The collected data will be used to understand the evolution of the properties of nc-SiON, as a function of the deposition parameters. The results here obtained show that nc-SiON films have better properties with respect to both a-Si:H and a-SiON, i. e. higher optical band-gap and transmittance. In addition, the analysis of the variation of the observed properties as a function of the deposition parameters allows for the optimization of deposition conditions for obtaining optimal efficiency of a HIT cell with SiON layer.

Morphological characterization of ZnS thin films for photovoltaic applications

Le celle solari a film sottile sono tra le alternative più promettenti nel campo fotovoltaico. La ricerca di materiali non tossici ed economici per la passivazione delle superfici è di fondamentale importanza. Il presente è uno studio sulla morfologia di film sottili di ZnS. I campioni analizzati sono stati cresciuti tramite DC sputtering a diversa potenza (range 50-150W) per studiare le connessioni tra condizioni di deposizione e proprietà strutturali. Lo studio è stato condotto mediante acquisizione di mappe AFM. E' stata effettuata un'analisi dei buchi (dips) in funzione della potenza di sputtering, per individuare il campione con la minore densità di dips in vista di applicazioni in celle solari a film sottile. I parametri strutturali, quali la rugosità superficiale e la lunghezza di correlazione laterale sono stati determinati con un'analisi statistica delle immagini. La densità e dimensione media dei grani sono state ricavate da una segmentazione delle immagini. Le analisi sono state svolte su due campioni di ZnO per fini comparativi. Tramite EFM sono state ottenute mappe di potenziale di contatto. Tramite KPFM si è valutata la differenza di potenziale tra ZnS e un layer di Al depositato sulla superficie. La sheet resistance è stata misurata con metodo a quattro punte. Dai risultati la potenza di sputtering influenza la struttura superficiale, ma in maniera non lineare. E' stato individuato il campione con la minore rugosità e densità di dips alla potenza di 75 W. Si è concluso che potenze troppo grandi o piccole in fase di deposizione promuovono il fenomeno di clustering dei grani e di aumentano la rugosità e densità di dips. E' emersa una corrispondenza diretta tra morfologia e potenziale di contatto alla superficie. La differenza di potenziale tra Al e ZnS è risultata inferiore al valore noto, ciò può essere dovuto a stati superficiali indotti da ossidi. Il campione risulta totalmente isolante.