Tecnologie ad agenti e sistemi embedded

Information technology (IT) is on the verge of another revolution. Driven by the increasing capabilities and ever declining costs of computing and communications devices, IT is being embedded into a growing range of physical devices linked together through networks and will become ever more pervasive as the component technologies become smaller, faster, and cheaper. [..] These networked systems of embedded computers, referred to as EmNets throughout this report, have the potential to change radically the way people interact with their environment by linking together a range of devices and sensors that will allow information to be collected, shared, and processed in unprecedented ways.[..] The use of EmNets throughout society could well dwarf previous milestones in the information revolution.[..] IT will eventually become \textbf{an invisible component of almost everything} in everyone`s surroundings. Con il ridursi dei costi e l'aumentare della capacità di computazione dei componenti elettronici sono proliferate piattaforme che permettono al bambino come all'ingegnere di sviluppare un'idea che trasversalmente taglia il mondo reale e quello virtuale. Una collisione tra due mondi che fino a poco tempo fa era consentita esclusivamente a professionisti. Oggetti che possono acquisire o estendere funzionalità, che ci permettono di estendere la nostra percezione del mondo e di rivalutarne i suoi limiti. Oggetti connessi alla 'rete delle reti' che condividono ed elaborano dati per un nuovo utilizzo delle informazioni. Con questa tesi si vuole andare ad esplorare l'applicazione degli agenti software alle nuove piattaforme dei sistemi embedded e dell'Internet of Things, tecnologie abbastanza mature eppure non ancora esplorate a fondo. Ha senso modellare un sistema embedded con gli agenti?

Characterization of in-gap electronic states in two-dimensional single crystal PEA2PbBr4 perovskite for X-ray detection

Hybrid Organic-Inorganic Halide Perovskites (HOIPs) include a large class of materials described with the general formula ABX3, where A is an organic cation, B an inorganic cation and X an halide anion. HOIPs show excellent optoelectronic characteristics such as tunable band gap, high adsorption coefficient and great mobility life-time. A subclass of these materials, the so-called two- dimensional (2D) layered HOIPs, have emerged as potential alternatives to traditional 3D analogs to enhance the stability and increase performance of perovskite devices, with particular regard in the area of ionizing radiation detectors, where these materials have reached truly remarkable milestones. One of the key challenges for future development of efficient and stable 2D perovskite X-ray detector is a complete understanding of the nature of defects that lead to the formation of deep states. Deep states act as non-radiative recombination centers for charge carriers and are one of the factors that most hinder the development of efficient 2D HOIPs-based X-ray detectors. In this work, deep states in PEA2PbBr4 were studied through Photo-Induced Current Transient Spectroscopy (PICTS), a highly sensitive spectroscopic technique capable of detecting the presence of deep states in highly resistive ohmic materials, and characterizing their activation energy, capture cross section and, under stringent conditions, the concentration of these states. The evolution of deep states in PEA 2 PbBr 4 was evaluated after exposure of the material to high doses of ionizing radiation and during aging (one year). The data obtained allowed us to evaluate the contribution of ion migration in PEA2PbBr4. This work represents an important starting point for a better understanding of transport and recombination phenomena in 2D perovskites. To date, the PICTS technique applied to 2D perovskites has not yet been reported in the scientific literature.