Two-dimensional relaxation-diffusion analysis to study water compartmentalization in cells by a single-sided NMR device

In questo lavoro di tesi è presentato un metodo per lo studio della compartimentalizzazione dell’acqua in cellule biologiche, mediante lo studio dell’autodiffusione delle molecole d’acqua tramite uno strumento NMR single-sided. Le misure sono state eseguite nel laboratorio NMR all’interno del DIFA di Bologna. Sono stati misurati i coefficienti di autodiffusione di tre campioni in condizione bulk, ottenendo risultati consistenti con la letteratura. È stato poi analizzato un sistema cellulare modello, Saccharomyces cerevisiae, allo stato solido, ottimizzando le procedure per l’ottenimento di mappe di correlazione 2D, aventi come assi il coefficiente di autodiffusione D e il tempo di rilassamento trasversale T2. In questo sistema l’acqua è confinata e l’autodiffusione è ristretta dalle pareti cellulari, si parla quindi di coefficiente di autodiffusione apparente, Dapp. Mediante le mappe sono state individuate due famiglie di nuclei 1H. Il campione è stato poi analizzato in diluizione in acqua distillata, confermando la separazione del segnale in due distinte famiglie. L’utilizzo di un composto chelato, il CuEDTA, ha permesso di affermare che la famiglia con il Dapp maggiore corrisponde all’acqua esterna alle cellule. L’analisi dei dati ottenuti sulle due famiglie al variare del tempo lasciato alle molecole d’acqua per la diffusione hanno portato alla stima del raggio dei due compartimenti: r=2.3±0.2µm per l’acqua extracellulare, r=0.9±0.1µm per quella intracellulare, che è probabilmente acqua scambiata tra gli organelli e il citoplasma. L’incertezza associata a tali stime tiene conto soltanto dell’errore nel calcolo dei parametri liberi del fit dei dati, è pertanto una sottostima, dovuta alle approssimazioni connesse all’utilizzo di equazioni valide per un sistema poroso costituito da pori sferici connessi non permeabili. Gli ordini di grandezza dei raggi calcolati sono invece consistenti con quelli osservabili dalle immagini ottenute con il microscopio ottico.

Characterization of in-gap electronic states in two-dimensional single crystal PEA2PbBr4 perovskite for X-ray detection

Hybrid Organic-Inorganic Halide Perovskites (HOIPs) include a large class of materials described with the general formula ABX3, where A is an organic cation, B an inorganic cation and X an halide anion. HOIPs show excellent optoelectronic characteristics such as tunable band gap, high adsorption coefficient and great mobility life-time. A subclass of these materials, the so-called two- dimensional (2D) layered HOIPs, have emerged as potential alternatives to traditional 3D analogs to enhance the stability and increase performance of perovskite devices, with particular regard in the area of ionizing radiation detectors, where these materials have reached truly remarkable milestones. One of the key challenges for future development of efficient and stable 2D perovskite X-ray detector is a complete understanding of the nature of defects that lead to the formation of deep states. Deep states act as non-radiative recombination centers for charge carriers and are one of the factors that most hinder the development of efficient 2D HOIPs-based X-ray detectors. In this work, deep states in PEA2PbBr4 were studied through Photo-Induced Current Transient Spectroscopy (PICTS), a highly sensitive spectroscopic technique capable of detecting the presence of deep states in highly resistive ohmic materials, and characterizing their activation energy, capture cross section and, under stringent conditions, the concentration of these states. The evolution of deep states in PEA 2 PbBr 4 was evaluated after exposure of the material to high doses of ionizing radiation and during aging (one year). The data obtained allowed us to evaluate the contribution of ion migration in PEA2PbBr4. This work represents an important starting point for a better understanding of transport and recombination phenomena in 2D perovskites. To date, the PICTS technique applied to 2D perovskites has not yet been reported in the scientific literature.

Numerical simulation of interdigitated back contact hetero-junction solar cells

The goal of this thesis is the application of an opto-electronic numerical simulation to heterojunction silicon solar cells featuring an all back contact architecture (Interdigitated Back Contact Hetero-Junction IBC-HJ). The studied structure exhibits both metal contacts, emitter and base, at the back surface of the cell with the objective to reduce the optical losses due to the shadowing by front contact of conventional photovoltaic devices. Overall, IBC-HJ are promising low-cost alternatives to monocrystalline wafer-based solar cells featuring front and back contact schemes, in fact, for IBC-HJ the high concentration doping diffusions are replaced by low-temperature deposition processes of thin amorphous silicon layers. Furthermore, another advantage of IBC solar cells with reference to conventional architectures is the possibility to enable a low-cost assembling of photovoltaic modules, being all contacts on the same side. A preliminary extensive literature survey has been helpful to highlight the specific critical aspects of IBC-HJ solar cells as well as the state-of-the-art of their modeling, processing and performance of practical devices. In order to perform the analysis of IBC-HJ devices, a two-dimensional (2-D) numerical simulation flow has been set up. A commercial device simulator based on finite-difference method to solve numerically the whole set of equations governing the electrical transport in semiconductor materials (Sentuarus Device by Synopsys) has been adopted. The first activity carried out during this work has been the definition of a 2-D geometry corresponding to the simulation domain and the specification of the electrical and optical properties of materials. In order to calculate the main figures of merit of the investigated solar cells, the spatially resolved photon absorption rate map has been calculated by means of an optical simulator. Optical simulations have been performed by using two different methods depending upon the geometrical features of the front interface of the solar cell: the transfer matrix method (TMM) and the raytracing (RT). The first method allows to model light prop-agation by plane waves within one-dimensional spatial domains under the assumption of devices exhibiting stacks of parallel layers with planar interfaces. In addition, TMM is suitable for the simulation of thin multi-layer anti reflection coating layers for the reduction of the amount of reflected light at the front interface. Raytracing is required for three-dimensional optical simulations of upright pyramidal textured surfaces which are widely adopted to significantly reduce the reflection at the front surface. The optical generation profiles are interpolated onto the electrical grid adopted by the device simulator which solves the carriers transport equations coupled with Poisson and continuity equations in a self-consistent way. The main figures of merit are calculated by means of a postprocessing of the output data from device simulation. After the validation of the simulation methodology by means of comparison of the simulation result with literature data, the ultimate efficiency of the IBC-HJ architecture has been calculated. By accounting for all optical losses, IBC-HJ solar cells result in a theoretical maximum efficiency above 23.5% (without texturing at front interface) higher than that of both standard homojunction crystalline silicon (Homogeneous Emitter HE) and front contact heterojuction (Heterojunction with Intrinsic Thin layer HIT) solar cells. However it is clear that the criticalities of this structure are mainly due to the defects density and to the poor carriers transport mobility in the amorphous silicon layers. Lastly, the influence of the most critical geometrical and physical parameters on the main figures of merit have been investigated by applying the numerical simulation tool set-up during the first part of the present thesis. Simulations have highlighted that carrier mobility and defects level in amorphous silicon may lead to a potentially significant reduction of the conversion efficiency.