Sub-wavelength resonators as seismic Rayleigh waves shield

We explore the thesis that tall structures can be protected by means of seismic metamaterials. Seismic metamaterials can be built as some elements are created over soil layer with different shapes, dimensions, patterns and from different materials. Resonances in these elements are acting as locally resonant metamaterials for Rayleigh surface waves in the geophysics context. Analytically we proved that if we put infinite chain of SDOF resonator over the soil layer as an elastic, homogeneous and isotropic material, vertical component of Rayleigh wave, longitudinal resonance of oscillators will couple with each other, they would create a Rayleigh bandgap frequency, and wave will experience attenuation before it reaches the structure. As it is impossible to use infinite chain of resonators over soil layer, we considered finite number of resonators throughout our simulations. Analytical work is interpreted using finite element simulations that demonstrates the observed attenuation is due to bandgaps when oscillators are arranged at sub-wavelength scale with respect to the incident Rayleigh wave. For wavelength less than 5 meters, the resulting bandgaps are remarkably large and strongly attenuating when impedance of oscillators matches impedance of soil. Since longitudinal resonance of SDOF resonator are proportional to its length inversely, a formed array of resonators that attenuates Rayleigh waves at frequency ≤10 Hz could be designed starting from vertical pillars coupled to the ground. Optimum number of vertical pillars and their interval spacing called effective area of resonators are investigated. For 10 pillars with effective area of 1 meter and resonance frequency of 4.9 Hz, bandgap frequency causes attenuation and a sinusoidal impulsive force illustrate wave steering down phenomena. Simulation results proved analytical findings of this work.

Study of high-quality ALD gate dielectrics in radiation sensitive oxide field effect transistors

Radiation dosimetry is crucial in many fields, where the exposure of ionizing radiation must be precisely controlled to avoid health and environmental safety issues. Radiotherapy and radioprotection are two examples in which fast and reliable detectors are needed. Compact and large area wearable detectors are being developed to address real-life radiation dosimetry applications, their ideal properties include flexibility, lightness, and low-cost. This thesis contributed to the development of Radiation sensitive OXide Field Effect Transistors (ROXFETs), which are detectors able to provide fast and real-time radiation read out. ROXFETs are based on thin film transistors fabricated with high-mobility amorphous oxide semiconductor, making them compatible with large area, flexible, and low cost production over plastic substrates. The gate dielectric material has high dielectric constant and high atomic number, which results in high performances and high radiation sensitivity, respectively. The aim of this work was to establish a stable and reliable fabrication process for ROXFETs made with atomic layer deposited gate dielectric. A study on the effect of gate dielectric materials was performed, focusing the attention on the properties of the dielectric-semiconductor interface. Single and multi layer dielectric structures were compared during this work. Furthermore, the effect of annealing temperature was studied. The device performances were tested to understand the underlying physical processes. In this way, it was possible to determine a reliable fabrication procedure and an optimal structure for ROXFETs. An outstanding sensitivity of (65±3)V/Gy was measured in detectors with a bi-layer Ta₂O₅-Al₂O₃ gate dielectric with low temperature annealing performed at 180°C.