In-situ DRIFT/MS study of the conversion of ethanol on mixed Mg/Si oxides

Due to the high price of natural oil and harmful effects of its usage, as the increase in emission of greenhouse gases, the industry focused in searching of sustainable types of the raw materials for production of chemicals. Ethanol, produced by fermentation of sugars, is one of the more interesting renewable materials for chemical manufacturing. There are numerous applications for the conversion of ethanol into commodity chemicals. In particular, the production of 1,3-butadiene whose primary source is ethanol using multifunctional catalysts is attractive. With the 25% of world rubber manufacturers utilizing 1,3-butadiene, there is an exigent need for its sustainable production. In this research, the conversion of ethanol in one-step process to 1,3-butadiene was studied. According to the literature, the mechanisms which were proposed to explain the way ethanol transforms into butadiene require to have both acid and basic sites. But still, there are a lot of debate on this topic. Thus, the aim of this research work is a better understanding of the reaction pathways with all the possible intermediates and products which lead to the formation of butadiene from ethanol. The particular interests represent the catalysts, based on different ratio Mg/Si in comparison to bare magnesia and silica oxides, in order to identify a good combination of acid/basic sites for the adsorption and conversion of ethanol. Usage of spectroscopictechniques are important to extract information that could be helpful for understanding the processes on the molecular level. The diffuse reflectance infrared spectroscopy coupled to mass spectrometry (DRIFT-MS) was used to study the surface composition of the catalysts during the adsorption of ethanol and its transformation during the temperature program. Whereas, mass spectrometry was used to monitor the desorbed products. The set of studied materials include MgO, Mg/Si=0.1, Mg/Si=2, Mg/Si=3, Mg/Si=9 and SiO2 which were also characterized by means of surface area measurements.

Morphological and optical properties of SiON thin films for photovoltaic applications

In the last years technologies related to photovoltaic energy have rapidly developed and the interest on renewable energy power source substantially increased. In particular, cost reduction and appropriate feed-in tariff contributed to the increase of photovoltaic installation, especially in Germany and Italy. However, for several technologies, the observed experimental efficiency of solar cells is still far from the theoretical maximum efficiency, and thus there is still room for improvement. In this framework the research and development of new materials and new solar devices is mandatory. In this thesis the morphological and optical properties of thin films of nanocrystalline silicon oxynitride (nc-SiON) have been investigated. This material has been studied in view of its application in Si based heterojunction solar cells (HIT). Actually, a-Si:H is used now in these cells as emitter layer. Amorphous SiO_x N_y has already shown excellent properties, such as: electrical conductivity, optical energy gap and transmittance higher than the ones of a-Si:H. Nc-SiO_x N_y has never been investigated up to now, but its properties can surpass the ones of amorphous SiON. The films of nc-SiON have been deposited at the University of Konstanz (Germany). The properties of these films have been studied using of atomic force microscopy and optical spectroscopy methods. This material is highly complex as it is made by different coexisting phases. The main purpose of this thesis is the development of methods for the analyses of morphological and optical properties of nc-SiON and the study of the reliability of those methods to the measurement of the characteristics of these silicon films. The collected data will be used to understand the evolution of the properties of nc-SiON, as a function of the deposition parameters. The results here obtained show that nc-SiON films have better properties with respect to both a-Si:H and a-SiON, i. e. higher optical band-gap and transmittance. In addition, the analysis of the variation of the observed properties as a function of the deposition parameters allows for the optimization of deposition conditions for obtaining optimal efficiency of a HIT cell with SiON layer.

Study of high-quality ALD gate dielectrics in radiation sensitive oxide field effect transistors

Radiation dosimetry is crucial in many fields, where the exposure of ionizing radiation must be precisely controlled to avoid health and environmental safety issues. Radiotherapy and radioprotection are two examples in which fast and reliable detectors are needed. Compact and large area wearable detectors are being developed to address real-life radiation dosimetry applications, their ideal properties include flexibility, lightness, and low-cost. This thesis contributed to the development of Radiation sensitive OXide Field Effect Transistors (ROXFETs), which are detectors able to provide fast and real-time radiation read out. ROXFETs are based on thin film transistors fabricated with high-mobility amorphous oxide semiconductor, making them compatible with large area, flexible, and low cost production over plastic substrates. The gate dielectric material has high dielectric constant and high atomic number, which results in high performances and high radiation sensitivity, respectively. The aim of this work was to establish a stable and reliable fabrication process for ROXFETs made with atomic layer deposited gate dielectric. A study on the effect of gate dielectric materials was performed, focusing the attention on the properties of the dielectric-semiconductor interface. Single and multi layer dielectric structures were compared during this work. Furthermore, the effect of annealing temperature was studied. The device performances were tested to understand the underlying physical processes. In this way, it was possible to determine a reliable fabrication procedure and an optimal structure for ROXFETs. An outstanding sensitivity of (65±3)V/Gy was measured in detectors with a bi-layer Ta₂O₅-Al₂O₃ gate dielectric with low temperature annealing performed at 180°C.

Construction and detectors’ characterization of a new detection system for FAMU Experiment

From 2010, the Proton Radius has become one of the most interest value to determine. The first proof of not complete understanding of its internal structure was the measurement of the Lamb Shift using the muonic hydrogen, leading to a value 7σ lower. A new road so was open and the Proton Radius Puzzle epoch begun. FAMU Experiment is a project that tries to give an answer to this Puzzle implementing high precision experimental apparatus. The work of this thesis is based on the study, construction and first characterization of a new detection system. Thanks to the previous experiments and simulations, this apparatus is composed by 17 detectors positioned on a semicircular crown with the related electronic circuit. The detectors' characterization is based on the use of a LabView program controlling a digital potentiometer and on other two analog potentiometers, all three used to set the amplitude of each detector to a predefined value, around 1.2 V, set on the oscilloscope by which is possible to observe the signal. This is the requirement in order to have, in the final measurement, a single high peak given by the sum of all the signals coming from the detectors. Each signal has been acquired for almost half of an hour, but the entire circuit has been maintained active for more time to observe its capacity to work for longer periods. The principal results of this thesis are given by the spectra of 12 detectors and the corresponding values of Voltages, FWHM and Resolution. The outcomes of the acquisitions show also another expected behavior: the strong dependence of the detectors from the temperature, demonstrating that an its change causes fluctuations in the signal. In turn, these fluctuations will affect the spectrum, resulting in a shifting of the curve and a lower Resolution. On the other hand, a measurement performed in stable conditions will lead to accordance between the nominal and experimental measurements, as for the detectors 10, 11 and 12 of our system.